JPS5851575A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5851575A JPS5851575A JP56149990A JP14999081A JPS5851575A JP S5851575 A JPS5851575 A JP S5851575A JP 56149990 A JP56149990 A JP 56149990A JP 14999081 A JP14999081 A JP 14999081A JP S5851575 A JPS5851575 A JP S5851575A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- source
- gallium arsenide
- region
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56149990A JPS5851575A (ja) | 1981-09-22 | 1981-09-22 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56149990A JPS5851575A (ja) | 1981-09-22 | 1981-09-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5851575A true JPS5851575A (ja) | 1983-03-26 |
| JPS6356711B2 JPS6356711B2 (enrdf_load_stackoverflow) | 1988-11-09 |
Family
ID=15487049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56149990A Granted JPS5851575A (ja) | 1981-09-22 | 1981-09-22 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5851575A (enrdf_load_stackoverflow) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61239679A (ja) * | 1985-04-15 | 1986-10-24 | Takeshi Kobayashi | 半導体装置 |
| US5381027A (en) * | 1988-01-26 | 1995-01-10 | Hitachi, Ltd. | Semiconductor device having a heterojunction and a two dimensional gas as an active layer |
| EP2953167A1 (en) * | 2014-06-05 | 2015-12-09 | Nxp B.V. | Semiconductor heterojunction device |
| CN106796953A (zh) * | 2014-10-30 | 2017-05-31 | 英特尔公司 | 源极/漏极至氮化镓晶体管中的2d电子气的低接触电阻再生长 |
| CN109841676A (zh) * | 2019-03-21 | 2019-06-04 | 华南理工大学 | 辅助掺杂实现常关型GaN HEMT器件及其制备方法 |
| US10756183B2 (en) | 2014-12-18 | 2020-08-25 | Intel Corporation | N-channel gallium nitride transistors |
| US10930500B2 (en) | 2014-09-18 | 2021-02-23 | Intel Corporation | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices |
| US11177376B2 (en) | 2014-09-25 | 2021-11-16 | Intel Corporation | III-N epitaxial device structures on free standing silicon mesas |
| US11233053B2 (en) | 2017-09-29 | 2022-01-25 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
| US12125888B2 (en) | 2017-09-29 | 2024-10-22 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
-
1981
- 1981-09-22 JP JP56149990A patent/JPS5851575A/ja active Granted
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61239679A (ja) * | 1985-04-15 | 1986-10-24 | Takeshi Kobayashi | 半導体装置 |
| US5381027A (en) * | 1988-01-26 | 1995-01-10 | Hitachi, Ltd. | Semiconductor device having a heterojunction and a two dimensional gas as an active layer |
| EP2953167A1 (en) * | 2014-06-05 | 2015-12-09 | Nxp B.V. | Semiconductor heterojunction device |
| US9391187B2 (en) | 2014-06-05 | 2016-07-12 | Nxp B.V. | Semiconductor heterojunction device |
| US10930500B2 (en) | 2014-09-18 | 2021-02-23 | Intel Corporation | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices |
| US11177376B2 (en) | 2014-09-25 | 2021-11-16 | Intel Corporation | III-N epitaxial device structures on free standing silicon mesas |
| CN106796953A (zh) * | 2014-10-30 | 2017-05-31 | 英特尔公司 | 源极/漏极至氮化镓晶体管中的2d电子气的低接触电阻再生长 |
| US10756183B2 (en) | 2014-12-18 | 2020-08-25 | Intel Corporation | N-channel gallium nitride transistors |
| US11233053B2 (en) | 2017-09-29 | 2022-01-25 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
| US11728346B2 (en) | 2017-09-29 | 2023-08-15 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
| US12125888B2 (en) | 2017-09-29 | 2024-10-22 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
| CN109841676A (zh) * | 2019-03-21 | 2019-06-04 | 华南理工大学 | 辅助掺杂实现常关型GaN HEMT器件及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6356711B2 (enrdf_load_stackoverflow) | 1988-11-09 |