JPS5848942A - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法

Info

Publication number
JPS5848942A
JPS5848942A JP56148094A JP14809481A JPS5848942A JP S5848942 A JPS5848942 A JP S5848942A JP 56148094 A JP56148094 A JP 56148094A JP 14809481 A JP14809481 A JP 14809481A JP S5848942 A JPS5848942 A JP S5848942A
Authority
JP
Japan
Prior art keywords
wiring
layer
conductor
semiconductor device
polyacetylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56148094A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219973B2 (enExample
Inventor
Nobuo Sasaki
伸夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56148094A priority Critical patent/JPS5848942A/ja
Priority to EP82304904A priority patent/EP0075454B1/en
Priority to DE8282304904T priority patent/DE3277759D1/de
Publication of JPS5848942A publication Critical patent/JPS5848942A/ja
Priority to US07/008,139 priority patent/US4761677A/en
Publication of JPH0219973B2 publication Critical patent/JPH0219973B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP56148094A 1981-09-18 1981-09-18 半導体装置とその製造方法 Granted JPS5848942A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56148094A JPS5848942A (ja) 1981-09-18 1981-09-18 半導体装置とその製造方法
EP82304904A EP0075454B1 (en) 1981-09-18 1982-09-17 Semiconductor device having new conductive interconnection structure and method for manufacturing the same
DE8282304904T DE3277759D1 (en) 1981-09-18 1982-09-17 Semiconductor device having new conductive interconnection structure and method for manufacturing the same
US07/008,139 US4761677A (en) 1981-09-18 1987-01-22 Semiconductor device having new conductive interconnection structure and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56148094A JPS5848942A (ja) 1981-09-18 1981-09-18 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JPS5848942A true JPS5848942A (ja) 1983-03-23
JPH0219973B2 JPH0219973B2 (enExample) 1990-05-07

Family

ID=15445100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56148094A Granted JPS5848942A (ja) 1981-09-18 1981-09-18 半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JPS5848942A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148149A (ja) * 1984-01-13 1985-08-05 Nec Corp 半導体集積回路装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832581A (enExample) * 1971-08-31 1973-04-28
JPS55130161A (en) * 1979-03-30 1980-10-08 Showa Denko Kk Fabricating method of p-n hetero junction element
JPS567450A (en) * 1979-06-29 1981-01-26 Ibm Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832581A (enExample) * 1971-08-31 1973-04-28
JPS55130161A (en) * 1979-03-30 1980-10-08 Showa Denko Kk Fabricating method of p-n hetero junction element
JPS567450A (en) * 1979-06-29 1981-01-26 Ibm Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148149A (ja) * 1984-01-13 1985-08-05 Nec Corp 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JPH0219973B2 (enExample) 1990-05-07

Similar Documents

Publication Publication Date Title
US4398335A (en) Multilayer metal silicide interconnections for integrated circuits
US4761677A (en) Semiconductor device having new conductive interconnection structure and method for manufacturing the same
JP3271272B2 (ja) 半導体装置の製造方法
US4488166A (en) Multilayer metal silicide interconnections for integrated circuits
CN108389867A (zh) 阵列基板及阵列基板的制作方法
US3849270A (en) Process of manufacturing semiconductor devices
US6261882B1 (en) Method for fabricating a semiconductor device
JP2008536295A (ja) 銀被覆電極を有するｌｃｄ装置
US5416352A (en) Gate electrode formed on a region ranging from a gate insulating film to a field insulating film
JPS5848942A (ja) 半導体装置とその製造方法
JPH0226055A (ja) 半導体装置の製造方法
JPS59195870A (ja) 半導体装置
JPS5848941A (ja) 半導体装置とその製造方法
JPH0117254B2 (enExample)
JPH065674B2 (ja) 半導体装置の製造方法
JPS6266679A (ja) 半導体装置の製造方法
JPS59103355A (ja) 半導体装置
JPS6240746A (ja) 半導体装置
JPH0682628B2 (ja) 半導体装置の製造方法
JPS59217341A (ja) 半導体集積回路装置の製造方法
KR100203303B1 (ko) 반도체 소자의 금속 배선 형성방법
JP2000091556A (ja) 電極・配線膜およびこれを用いた半導体装置
JPS5860567A (ja) 半導体装置の製造方法
JPH03183126A (ja) 半導体装置の製造方法
JPH027543A (ja) 接続電極形成方法