JPS5846680A - 記憶素子 - Google Patents

記憶素子

Info

Publication number
JPS5846680A
JPS5846680A JP56145328A JP14532881A JPS5846680A JP S5846680 A JPS5846680 A JP S5846680A JP 56145328 A JP56145328 A JP 56145328A JP 14532881 A JP14532881 A JP 14532881A JP S5846680 A JPS5846680 A JP S5846680A
Authority
JP
Japan
Prior art keywords
thin film
electrode
semiconductor
semiconductor thin
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56145328A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0145750B2 (enExample
Inventor
Masataka Shirasaki
白崎　正孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56145328A priority Critical patent/JPS5846680A/ja
Publication of JPS5846680A publication Critical patent/JPS5846680A/ja
Publication of JPH0145750B2 publication Critical patent/JPH0145750B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56145328A 1981-09-14 1981-09-14 記憶素子 Granted JPS5846680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56145328A JPS5846680A (ja) 1981-09-14 1981-09-14 記憶素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56145328A JPS5846680A (ja) 1981-09-14 1981-09-14 記憶素子

Publications (2)

Publication Number Publication Date
JPS5846680A true JPS5846680A (ja) 1983-03-18
JPH0145750B2 JPH0145750B2 (enExample) 1989-10-04

Family

ID=15382619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56145328A Granted JPS5846680A (ja) 1981-09-14 1981-09-14 記憶素子

Country Status (1)

Country Link
JP (1) JPS5846680A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02239652A (ja) * 1989-03-14 1990-09-21 Toshiba Corp 半導体装置
WO1996029742A1 (en) * 1995-03-17 1996-09-26 Radiant Technologies, Inc. Improved non-destructively read ferroelectric memory cell
US5955213A (en) * 1995-08-25 1999-09-21 Tdk Corporation Ferroelectric thin film, electric device, and method for preparing ferroelectric thin film
WO2003058723A1 (fr) * 2001-12-28 2003-07-17 National Institute Of Advanced Industrial Science And Technology Transistor a film mince organique et son procede de fabrication

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02239652A (ja) * 1989-03-14 1990-09-21 Toshiba Corp 半導体装置
US5521417A (en) * 1989-03-14 1996-05-28 Kabushiki Kaisha Toshiba Semiconductor device comprising a non-volatile memory formed on a data processor
WO1996029742A1 (en) * 1995-03-17 1996-09-26 Radiant Technologies, Inc. Improved non-destructively read ferroelectric memory cell
US5578846A (en) * 1995-03-17 1996-11-26 Evans, Jr.; Joseph T. Static ferroelectric memory transistor having improved data retention
EP0815596A4 (en) * 1995-03-17 1998-06-03 Radiant Technologies Inc IMPROVED NON-DESTRUCTIVE FERROELECTRIC MEMORY CELL
US6225654B1 (en) * 1995-03-17 2001-05-01 Radiant Technologies, Inc Static ferrolectric memory transistor having improved data retention
US5955213A (en) * 1995-08-25 1999-09-21 Tdk Corporation Ferroelectric thin film, electric device, and method for preparing ferroelectric thin film
WO2003058723A1 (fr) * 2001-12-28 2003-07-17 National Institute Of Advanced Industrial Science And Technology Transistor a film mince organique et son procede de fabrication
US7138682B2 (en) 2001-12-28 2006-11-21 National Institute Of Advanced Industrial Science And Technology Organic thin-film transistor and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0145750B2 (enExample) 1989-10-04

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