JPS5835919A - 金属半導体接合電極の製造方法 - Google Patents

金属半導体接合電極の製造方法

Info

Publication number
JPS5835919A
JPS5835919A JP56134196A JP13419681A JPS5835919A JP S5835919 A JPS5835919 A JP S5835919A JP 56134196 A JP56134196 A JP 56134196A JP 13419681 A JP13419681 A JP 13419681A JP S5835919 A JPS5835919 A JP S5835919A
Authority
JP
Japan
Prior art keywords
layer
thickness
formation
heat treatment
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56134196A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139222B2 (OSRAM
Inventor
Yoshiki Wada
和田　嘉記
Yasuhiro Kawasaki
康弘 川崎
Shuichi Kanamori
金森　周一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56134196A priority Critical patent/JPS5835919A/ja
Publication of JPS5835919A publication Critical patent/JPS5835919A/ja
Publication of JPH0139222B2 publication Critical patent/JPH0139222B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP56134196A 1981-08-28 1981-08-28 金属半導体接合電極の製造方法 Granted JPS5835919A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56134196A JPS5835919A (ja) 1981-08-28 1981-08-28 金属半導体接合電極の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56134196A JPS5835919A (ja) 1981-08-28 1981-08-28 金属半導体接合電極の製造方法

Publications (2)

Publication Number Publication Date
JPS5835919A true JPS5835919A (ja) 1983-03-02
JPH0139222B2 JPH0139222B2 (OSRAM) 1989-08-18

Family

ID=15122672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56134196A Granted JPS5835919A (ja) 1981-08-28 1981-08-28 金属半導体接合電極の製造方法

Country Status (1)

Country Link
JP (1) JPS5835919A (OSRAM)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224435A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置
JPH01179316A (ja) * 1988-01-05 1989-07-17 Nec Corp 化合物半導体装置の電極形成方法
US4923827A (en) * 1988-05-16 1990-05-08 Eaton Corporation T-type undercut electrical contact process on a semiconductor substrate
US4935805A (en) * 1988-05-16 1990-06-19 Eaton Corporation T-type undercut electrical contact on a semiconductor substrate
JPH0396229A (ja) * 1989-08-16 1991-04-22 American Teleph & Telegr Co <Att> 半導体デバイスにオーミック接点を形成する方法
JPH0463480A (ja) * 1990-07-02 1992-02-28 Sharp Corp ３―ｖ族化合物半導体装置
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
JP2000513882A (ja) * 1998-04-20 2000-10-17 ユニフェイズ レーザー エンタープライズ アーゲー ノンシリコン技術および方法に用いる窒化チタン拡散障壁

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120132A (en) * 1979-11-30 1980-09-16 Sumitomo Electric Ind Ltd Manufacture of semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120132A (en) * 1979-11-30 1980-09-16 Sumitomo Electric Ind Ltd Manufacture of semiconductor element

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224435A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
JPH01179316A (ja) * 1988-01-05 1989-07-17 Nec Corp 化合物半導体装置の電極形成方法
US4923827A (en) * 1988-05-16 1990-05-08 Eaton Corporation T-type undercut electrical contact process on a semiconductor substrate
US4935805A (en) * 1988-05-16 1990-06-19 Eaton Corporation T-type undercut electrical contact on a semiconductor substrate
JPH0396229A (ja) * 1989-08-16 1991-04-22 American Teleph & Telegr Co <Att> 半導体デバイスにオーミック接点を形成する方法
JPH0463480A (ja) * 1990-07-02 1992-02-28 Sharp Corp ３―ｖ族化合物半導体装置
JP2000513882A (ja) * 1998-04-20 2000-10-17 ユニフェイズ レーザー エンタープライズ アーゲー ノンシリコン技術および方法に用いる窒化チタン拡散障壁

Also Published As

Publication number Publication date
JPH0139222B2 (OSRAM) 1989-08-18

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