JPS5833873A - 薄膜トランジスタの製造法 - Google Patents

薄膜トランジスタの製造法

Info

Publication number
JPS5833873A
JPS5833873A JP56132860A JP13286081A JPS5833873A JP S5833873 A JPS5833873 A JP S5833873A JP 56132860 A JP56132860 A JP 56132860A JP 13286081 A JP13286081 A JP 13286081A JP S5833873 A JPS5833873 A JP S5833873A
Authority
JP
Japan
Prior art keywords
film
thin film
film transistor
oxidized
anodic oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56132860A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318357B2 (enrdf_load_stackoverflow
Inventor
Kanetaka Sekiguchi
金孝 関口
Seigo Togashi
清吾 富樫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP56132860A priority Critical patent/JPS5833873A/ja
Priority to GB08221029A priority patent/GB2107115B/en
Publication of JPS5833873A publication Critical patent/JPS5833873A/ja
Priority to US06/621,324 priority patent/US4502204A/en
Publication of JPH0318357B2 publication Critical patent/JPH0318357B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
JP56132860A 1981-07-17 1981-08-25 薄膜トランジスタの製造法 Granted JPS5833873A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56132860A JPS5833873A (ja) 1981-08-25 1981-08-25 薄膜トランジスタの製造法
GB08221029A GB2107115B (en) 1981-07-17 1982-07-19 Method of manufacturing insulated gate thin film effect transitors
US06/621,324 US4502204A (en) 1981-07-17 1984-06-15 Method of manufacturing insulated gate thin film field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56132860A JPS5833873A (ja) 1981-08-25 1981-08-25 薄膜トランジスタの製造法

Publications (2)

Publication Number Publication Date
JPS5833873A true JPS5833873A (ja) 1983-02-28
JPH0318357B2 JPH0318357B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=15091220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56132860A Granted JPS5833873A (ja) 1981-07-17 1981-08-25 薄膜トランジスタの製造法

Country Status (1)

Country Link
JP (1) JPS5833873A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0318357B2 (enrdf_load_stackoverflow) 1991-03-12

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