JPS5831591A - 埋め込み構造半導体レ−ザ - Google Patents
埋め込み構造半導体レ−ザInfo
- Publication number
- JPS5831591A JPS5831591A JP12905581A JP12905581A JPS5831591A JP S5831591 A JPS5831591 A JP S5831591A JP 12905581 A JP12905581 A JP 12905581A JP 12905581 A JP12905581 A JP 12905581A JP S5831591 A JPS5831591 A JP S5831591A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buried
- current
- type
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005253 cladding Methods 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 239000007791 liquid phase Substances 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 241000382353 Pupa Species 0.000 description 1
- 102200141516 rs149079952 Human genes 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12905581A JPS5831591A (ja) | 1981-08-18 | 1981-08-18 | 埋め込み構造半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12905581A JPS5831591A (ja) | 1981-08-18 | 1981-08-18 | 埋め込み構造半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831591A true JPS5831591A (ja) | 1983-02-24 |
| JPS6243356B2 JPS6243356B2 (enrdf_load_stackoverflow) | 1987-09-12 |
Family
ID=14999966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12905581A Granted JPS5831591A (ja) | 1981-08-18 | 1981-08-18 | 埋め込み構造半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831591A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS59112671A (ja) * | 1982-12-20 | 1984-06-29 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体レ−ザ |
| JPS6261386A (ja) * | 1985-09-11 | 1987-03-18 | Sharp Corp | 半導体レ−ザ素子 |
-
1981
- 1981-08-18 JP JP12905581A patent/JPS5831591A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS59112671A (ja) * | 1982-12-20 | 1984-06-29 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体レ−ザ |
| JPS6261386A (ja) * | 1985-09-11 | 1987-03-18 | Sharp Corp | 半導体レ−ザ素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6243356B2 (enrdf_load_stackoverflow) | 1987-09-12 |
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