JPS5831575A - 多結晶薄膜トランジスタ - Google Patents
多結晶薄膜トランジスタInfo
- Publication number
- JPS5831575A JPS5831575A JP56128757A JP12875781A JPS5831575A JP S5831575 A JPS5831575 A JP S5831575A JP 56128757 A JP56128757 A JP 56128757A JP 12875781 A JP12875781 A JP 12875781A JP S5831575 A JPS5831575 A JP S5831575A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- polycrystalline
- film transistor
- film
- polycrystalline thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 17
- 239000013078 crystal Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000969 carrier Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56128757A JPS5831575A (ja) | 1981-08-19 | 1981-08-19 | 多結晶薄膜トランジスタ |
| KR8203569A KR900008942B1 (ko) | 1981-08-19 | 1982-08-09 | 다결정 박막 트랜지스터 |
| EP82304352A EP0073603B1 (fr) | 1981-08-19 | 1982-08-18 | Transistor à film mince polycristallin et circuit intégré comprenant un tel transistor et dispositif d'affichage comprenant un tel circuit |
| CA000409651A CA1195784A (fr) | 1981-08-19 | 1982-08-18 | Transistor polycristallin en couche mince |
| DE8282304352T DE3277101D1 (en) | 1981-08-19 | 1982-08-18 | Polycrystalline thin-film transistor,integrated circuit including such transistors and a display device including such a circuit |
| KR1019900010455A KR910001910B1 (ko) | 1981-08-19 | 1990-07-11 | 평면 표시 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56128757A JPS5831575A (ja) | 1981-08-19 | 1981-08-19 | 多結晶薄膜トランジスタ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5831575A true JPS5831575A (ja) | 1983-02-24 |
Family
ID=14992707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56128757A Pending JPS5831575A (ja) | 1981-08-19 | 1981-08-19 | 多結晶薄膜トランジスタ |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5831575A (fr) |
| KR (1) | KR900008942B1 (fr) |
| CA (1) | CA1195784A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100468A (ja) * | 1983-11-07 | 1985-06-04 | Hitachi Ltd | プラズマ陽極酸化装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS515967A (ja) * | 1974-07-03 | 1976-01-19 | Suwa Seikosha Kk | Handotaisochi |
| JPS5617083A (en) * | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Semiconductor device and its manufacture |
-
1981
- 1981-08-19 JP JP56128757A patent/JPS5831575A/ja active Pending
-
1982
- 1982-08-09 KR KR8203569A patent/KR900008942B1/ko active
- 1982-08-18 CA CA000409651A patent/CA1195784A/fr not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS515967A (ja) * | 1974-07-03 | 1976-01-19 | Suwa Seikosha Kk | Handotaisochi |
| JPS5617083A (en) * | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Semiconductor device and its manufacture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60100468A (ja) * | 1983-11-07 | 1985-06-04 | Hitachi Ltd | プラズマ陽極酸化装置 |
| JPH0530053B2 (fr) * | 1983-11-07 | 1993-05-07 | Hitachi Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1195784A (fr) | 1985-10-22 |
| KR900008942B1 (ko) | 1990-12-13 |
| KR840001391A (ko) | 1984-04-30 |
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