JPS5831531A - エツチング方法 - Google Patents

エツチング方法

Info

Publication number
JPS5831531A
JPS5831531A JP12876081A JP12876081A JPS5831531A JP S5831531 A JPS5831531 A JP S5831531A JP 12876081 A JP12876081 A JP 12876081A JP 12876081 A JP12876081 A JP 12876081A JP S5831531 A JPS5831531 A JP S5831531A
Authority
JP
Japan
Prior art keywords
etching
groove
mask
film
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12876081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04390B2 (enrdf_load_stackoverflow
Inventor
Tokuo Kure
久礼　得男
Yoichi Tamaoki
玉置　洋一
Akira Sato
朗 佐藤
Hisayuki Higuchi
樋口　久幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12876081A priority Critical patent/JPS5831531A/ja
Priority to EP81304255A priority patent/EP0048175B1/en
Priority to DE8181304255T priority patent/DE3174468D1/de
Publication of JPS5831531A publication Critical patent/JPS5831531A/ja
Priority to US06/733,406 priority patent/US4635090A/en
Priority to US06/891,174 priority patent/US5128743A/en
Publication of JPH04390B2 publication Critical patent/JPH04390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP12876081A 1980-09-17 1981-08-19 エツチング方法 Granted JPS5831531A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP12876081A JPS5831531A (ja) 1981-08-19 1981-08-19 エツチング方法
EP81304255A EP0048175B1 (en) 1980-09-17 1981-09-16 Semiconductor device and method of manufacturing the same
DE8181304255T DE3174468D1 (en) 1980-09-17 1981-09-16 Semiconductor device and method of manufacturing the same
US06/733,406 US4635090A (en) 1980-09-17 1985-05-13 Tapered groove IC isolation
US06/891,174 US5128743A (en) 1980-09-17 1986-07-31 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12876081A JPS5831531A (ja) 1981-08-19 1981-08-19 エツチング方法

Publications (2)

Publication Number Publication Date
JPS5831531A true JPS5831531A (ja) 1983-02-24
JPH04390B2 JPH04390B2 (enrdf_load_stackoverflow) 1992-01-07

Family

ID=14992781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12876081A Granted JPS5831531A (ja) 1980-09-17 1981-08-19 エツチング方法

Country Status (1)

Country Link
JP (1) JPS5831531A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548371B2 (en) 1998-11-25 2003-04-15 Oki Electric Industry Co., Ltd. Method of forming a groove-like area in a semiconductor device
US6849919B2 (en) 2001-08-13 2005-02-01 Renesas Technology Corp. Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device
JP2018032757A (ja) * 2016-08-25 2018-03-01 キヤノン株式会社 半導体装置及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154351A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Formation of electrode contact holes in semiconductor devices
JPS5562733A (en) * 1978-11-03 1980-05-12 Ibm Method of forming narrow region on silicon substrate
JPS5612747A (en) * 1979-07-12 1981-02-07 Matsushita Electric Ind Co Ltd Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154351A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Formation of electrode contact holes in semiconductor devices
JPS5562733A (en) * 1978-11-03 1980-05-12 Ibm Method of forming narrow region on silicon substrate
JPS5612747A (en) * 1979-07-12 1981-02-07 Matsushita Electric Ind Co Ltd Production of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548371B2 (en) 1998-11-25 2003-04-15 Oki Electric Industry Co., Ltd. Method of forming a groove-like area in a semiconductor device
US6849919B2 (en) 2001-08-13 2005-02-01 Renesas Technology Corp. Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device
US7268056B2 (en) 2001-08-13 2007-09-11 Renesas Technology Corp. Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device
US7326627B2 (en) 2001-08-13 2008-02-05 Renesas Technology Corp. Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device
US7808031B2 (en) 2001-08-13 2010-10-05 Renesas Technology Corp. Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device
JP2018032757A (ja) * 2016-08-25 2018-03-01 キヤノン株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH04390B2 (enrdf_load_stackoverflow) 1992-01-07

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