JPS5823475A - 半導体装置及び製造方法 - Google Patents

半導体装置及び製造方法

Info

Publication number
JPS5823475A
JPS5823475A JP56122659A JP12265981A JPS5823475A JP S5823475 A JPS5823475 A JP S5823475A JP 56122659 A JP56122659 A JP 56122659A JP 12265981 A JP12265981 A JP 12265981A JP S5823475 A JPS5823475 A JP S5823475A
Authority
JP
Japan
Prior art keywords
wiring
insulating film
fuse
thickness
fuse part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56122659A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0140500B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
伸夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56122659A priority Critical patent/JPS5823475A/ja
Publication of JPS5823475A publication Critical patent/JPS5823475A/ja
Publication of JPH0140500B2 publication Critical patent/JPH0140500B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56122659A 1981-08-05 1981-08-05 半導体装置及び製造方法 Granted JPS5823475A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56122659A JPS5823475A (ja) 1981-08-05 1981-08-05 半導体装置及び製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56122659A JPS5823475A (ja) 1981-08-05 1981-08-05 半導体装置及び製造方法

Publications (2)

Publication Number Publication Date
JPS5823475A true JPS5823475A (ja) 1983-02-12
JPH0140500B2 JPH0140500B2 (enrdf_load_stackoverflow) 1989-08-29

Family

ID=14841447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56122659A Granted JPS5823475A (ja) 1981-08-05 1981-08-05 半導体装置及び製造方法

Country Status (1)

Country Link
JP (1) JPS5823475A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115687A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 読出し専用メモリ−の書込み方法
JPS6471147A (en) * 1987-08-12 1989-03-16 American Telephone & Telegraph Solid state circuit with laser-fusible link
US5070392A (en) * 1988-03-18 1991-12-03 Digital Equipment Corporation Integrated circuit having laser-alterable metallization layer
EP0740332A2 (en) * 1995-04-24 1996-10-30 Texas Instruments Incorporated Improvements in or relating to semiconductor integrated circuit devices
WO2001026150A1 (en) * 1999-10-05 2001-04-12 Philips Semiconductors, Inc. System and method for repairing interconnect links
WO2001050528A1 (en) * 1999-12-30 2001-07-12 Koninklijke Philips Electronics N.V. A backend process for fuse link opening

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115687A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 読出し専用メモリ−の書込み方法
JPS6471147A (en) * 1987-08-12 1989-03-16 American Telephone & Telegraph Solid state circuit with laser-fusible link
US4853758A (en) * 1987-08-12 1989-08-01 American Telephone And Telegraph Company, At&T Bell Laboratories Laser-blown links
US5070392A (en) * 1988-03-18 1991-12-03 Digital Equipment Corporation Integrated circuit having laser-alterable metallization layer
EP0740332A2 (en) * 1995-04-24 1996-10-30 Texas Instruments Incorporated Improvements in or relating to semiconductor integrated circuit devices
WO2001026150A1 (en) * 1999-10-05 2001-04-12 Philips Semiconductors, Inc. System and method for repairing interconnect links
US6372522B1 (en) 1999-10-05 2002-04-16 Vlsi Technology, Inc. Use of optimized film stacks for increasing absorption for laser repair of fuse links
WO2001050528A1 (en) * 1999-12-30 2001-07-12 Koninklijke Philips Electronics N.V. A backend process for fuse link opening
US6306746B1 (en) 1999-12-30 2001-10-23 Koninklijke Philips Electronics Backend process for fuse link opening

Also Published As

Publication number Publication date
JPH0140500B2 (enrdf_load_stackoverflow) 1989-08-29

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