JPS58225683A - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法

Info

Publication number
JPS58225683A
JPS58225683A JP10891782A JP10891782A JPS58225683A JP S58225683 A JPS58225683 A JP S58225683A JP 10891782 A JP10891782 A JP 10891782A JP 10891782 A JP10891782 A JP 10891782A JP S58225683 A JPS58225683 A JP S58225683A
Authority
JP
Japan
Prior art keywords
groove
layer
substrate
inp
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10891782A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6367349B2 (enrdf_load_stackoverflow
Inventor
Ryoichi Hirano
良一 平野
Hirobumi Namisaki
浪崎　博文
Wataru Suzaki
須崎　渉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10891782A priority Critical patent/JPS58225683A/ja
Publication of JPS58225683A publication Critical patent/JPS58225683A/ja
Publication of JPS6367349B2 publication Critical patent/JPS6367349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
JP10891782A 1982-06-22 1982-06-22 半導体レーザの製造方法 Granted JPS58225683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10891782A JPS58225683A (ja) 1982-06-22 1982-06-22 半導体レーザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10891782A JPS58225683A (ja) 1982-06-22 1982-06-22 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
JPS58225683A true JPS58225683A (ja) 1983-12-27
JPS6367349B2 JPS6367349B2 (enrdf_load_stackoverflow) 1988-12-26

Family

ID=14496920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10891782A Granted JPS58225683A (ja) 1982-06-22 1982-06-22 半導体レーザの製造方法

Country Status (1)

Country Link
JP (1) JPS58225683A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02226603A (ja) * 1989-02-28 1990-09-10 Fuji Photo Optical Co Ltd スポットライト装置
JPH0474139U (enrdf_load_stackoverflow) * 1990-11-09 1992-06-29

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same
JPS56110288A (en) * 1980-02-05 1981-09-01 Mitsubishi Electric Corp Semiconductor laser element
JPS5795689A (en) * 1980-12-05 1982-06-14 Nec Corp Stripe shaped type double hetero junction laser element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same
JPS56110288A (en) * 1980-02-05 1981-09-01 Mitsubishi Electric Corp Semiconductor laser element
JPS5795689A (en) * 1980-12-05 1982-06-14 Nec Corp Stripe shaped type double hetero junction laser element

Also Published As

Publication number Publication date
JPS6367349B2 (enrdf_load_stackoverflow) 1988-12-26

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