JPS58225683A - 半導体レーザの製造方法 - Google Patents
半導体レーザの製造方法Info
- Publication number
- JPS58225683A JPS58225683A JP10891782A JP10891782A JPS58225683A JP S58225683 A JPS58225683 A JP S58225683A JP 10891782 A JP10891782 A JP 10891782A JP 10891782 A JP10891782 A JP 10891782A JP S58225683 A JPS58225683 A JP S58225683A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- layer
- substrate
- inp
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10891782A JPS58225683A (ja) | 1982-06-22 | 1982-06-22 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10891782A JPS58225683A (ja) | 1982-06-22 | 1982-06-22 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58225683A true JPS58225683A (ja) | 1983-12-27 |
| JPS6367349B2 JPS6367349B2 (enrdf_load_stackoverflow) | 1988-12-26 |
Family
ID=14496920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10891782A Granted JPS58225683A (ja) | 1982-06-22 | 1982-06-22 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58225683A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02226603A (ja) * | 1989-02-28 | 1990-09-10 | Fuji Photo Optical Co Ltd | スポットライト装置 |
| JPH0474139U (enrdf_load_stackoverflow) * | 1990-11-09 | 1992-06-29 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS523392A (en) * | 1975-06-23 | 1977-01-11 | Xerox Corp | Hetero juntion diode laser and method of producing same |
| JPS56110288A (en) * | 1980-02-05 | 1981-09-01 | Mitsubishi Electric Corp | Semiconductor laser element |
| JPS5795689A (en) * | 1980-12-05 | 1982-06-14 | Nec Corp | Stripe shaped type double hetero junction laser element |
-
1982
- 1982-06-22 JP JP10891782A patent/JPS58225683A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS523392A (en) * | 1975-06-23 | 1977-01-11 | Xerox Corp | Hetero juntion diode laser and method of producing same |
| JPS56110288A (en) * | 1980-02-05 | 1981-09-01 | Mitsubishi Electric Corp | Semiconductor laser element |
| JPS5795689A (en) * | 1980-12-05 | 1982-06-14 | Nec Corp | Stripe shaped type double hetero junction laser element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6367349B2 (enrdf_load_stackoverflow) | 1988-12-26 |
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