JPS58225671A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58225671A
JPS58225671A JP57108004A JP10800482A JPS58225671A JP S58225671 A JPS58225671 A JP S58225671A JP 57108004 A JP57108004 A JP 57108004A JP 10800482 A JP10800482 A JP 10800482A JP S58225671 A JPS58225671 A JP S58225671A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
pattern
layer
resist
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57108004A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0367351B2 (enrdf_load_stackoverflow
Inventor
Kazuya Nagase
永瀬　一哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57108004A priority Critical patent/JPS58225671A/ja
Publication of JPS58225671A publication Critical patent/JPS58225671A/ja
Publication of JPH0367351B2 publication Critical patent/JPH0367351B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP57108004A 1982-06-23 1982-06-23 半導体装置の製造方法 Granted JPS58225671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57108004A JPS58225671A (ja) 1982-06-23 1982-06-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57108004A JPS58225671A (ja) 1982-06-23 1982-06-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58225671A true JPS58225671A (ja) 1983-12-27
JPH0367351B2 JPH0367351B2 (enrdf_load_stackoverflow) 1991-10-22

Family

ID=14473539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57108004A Granted JPS58225671A (ja) 1982-06-23 1982-06-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58225671A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196478A (ja) * 2000-01-17 2001-07-19 Mitsubishi Electric Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ
JP2011129936A (ja) * 2011-01-06 2011-06-30 Renesas Electronics Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196478A (ja) * 2000-01-17 2001-07-19 Mitsubishi Electric Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ
JP2011129936A (ja) * 2011-01-06 2011-06-30 Renesas Electronics Corp 半導体装置の製造方法、フラッシュメモリの製造方法、およびスタティックランダムアクセスメモリの製造方法ならびにフラッシュメモリ

Also Published As

Publication number Publication date
JPH0367351B2 (enrdf_load_stackoverflow) 1991-10-22

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