JPS58223678A - 金属化層を有するＳｉＣ焼結体とその製法 - Google Patents

金属化層を有するＳｉＣ焼結体とその製法

Info

Publication number
JPS58223678A
JPS58223678A JP57102202A JP10220282A JPS58223678A JP S58223678 A JPS58223678 A JP S58223678A JP 57102202 A JP57102202 A JP 57102202A JP 10220282 A JP10220282 A JP 10220282A JP S58223678 A JPS58223678 A JP S58223678A
Authority
JP
Japan
Prior art keywords
sintered body
metallized layer
powder
binder
layer according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57102202A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230159B2 (enExample
Inventor
秀夫 鈴木
小倉　慧
治 浅井
邦夫 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57102202A priority Critical patent/JPS58223678A/ja
Priority to EP83303456A priority patent/EP0097058B1/en
Priority to DE8383303456T priority patent/DE3373894D1/de
Priority to KR1019830002696A priority patent/KR840005060A/ko
Priority to US06/504,787 priority patent/US4663649A/en
Publication of JPS58223678A publication Critical patent/JPS58223678A/ja
Publication of JPS6230159B2 publication Critical patent/JPS6230159B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/098—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/408—Noble metals, e.g. palladium, platina or silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Ceramic Products (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
JP57102202A 1982-06-16 1982-06-16 金属化層を有するＳｉＣ焼結体とその製法 Granted JPS58223678A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57102202A JPS58223678A (ja) 1982-06-16 1982-06-16 金属化層を有するＳｉＣ焼結体とその製法
EP83303456A EP0097058B1 (en) 1982-06-16 1983-06-15 Sic sintered body having metallized layer and production method therefor
DE8383303456T DE3373894D1 (en) 1982-06-16 1983-06-15 Sic sintered body having metallized layer and production method therefor
KR1019830002696A KR840005060A (ko) 1982-06-16 1983-06-16 금속화층(金屬化層)을 갖는 sic 소결체(燒結體)와 그 제법
US06/504,787 US4663649A (en) 1982-06-16 1983-06-16 SiC sintered body having metallized layer and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57102202A JPS58223678A (ja) 1982-06-16 1982-06-16 金属化層を有するＳｉＣ焼結体とその製法

Publications (2)

Publication Number Publication Date
JPS58223678A true JPS58223678A (ja) 1983-12-26
JPS6230159B2 JPS6230159B2 (enExample) 1987-06-30

Family

ID=14321076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57102202A Granted JPS58223678A (ja) 1982-06-16 1982-06-16 金属化層を有するＳｉＣ焼結体とその製法

Country Status (5)

Country Link
US (1) US4663649A (enExample)
EP (1) EP0097058B1 (enExample)
JP (1) JPS58223678A (enExample)
KR (1) KR840005060A (enExample)
DE (1) DE3373894D1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010524736A (ja) * 2007-04-24 2010-07-22 セラムテック アクチエンゲゼルシャフト 金属被覆された構成部分を製造するための方法、金属被覆された構成部分、並びに金属被覆の際に構成部分を支持するための支持体
JP2019207992A (ja) * 2018-05-30 2019-12-05 京セラ株式会社 電気素子搭載用パッケージおよび電気装置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59995A (ja) * 1982-06-16 1984-01-06 富士通株式会社 銅導体多層構造体の製造方法
US4784974A (en) * 1982-08-05 1988-11-15 Olin Corporation Method of making a hermetically sealed semiconductor casing
CH660176A5 (de) * 1984-07-06 1987-03-31 Bbc Brown Boveri & Cie Metall-keramik-verbundelement und verfahren zu dessen herstellung.
DE3573137D1 (en) * 1984-10-03 1989-10-26 Sumitomo Electric Industries Material for a semiconductor device and process for its manufacture
JPS61248302A (ja) * 1985-04-25 1986-11-05 株式会社日立製作所 炭化ケイ素焼結体用メタライズペ−スト
DE3784213T2 (de) * 1986-10-29 1993-06-03 Toshiba Kawasaki Kk Elektronischer apparat mit einem keramischen substrat.
US4731700A (en) * 1987-02-12 1988-03-15 Delco Electronics Corporation Semiconductor connection and crossover apparatus
US4769345A (en) * 1987-03-12 1988-09-06 Olin Corporation Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
US5240171A (en) * 1987-05-21 1993-08-31 Lanxide Technology Company, Lp Method for surface bonding of ceramic bodies
JP2548602B2 (ja) * 1988-04-12 1996-10-30 株式会社日立製作所 半導体実装モジュール
US5041695A (en) * 1989-06-01 1991-08-20 Westinghouse Electric Corp. Co-fired ceramic package for a power circuit
US5169805A (en) * 1990-01-29 1992-12-08 International Business Machines Corporation Method of resiliently mounting an integrated circuit chip to enable conformal heat dissipation
US5057909A (en) * 1990-01-29 1991-10-15 International Business Machines Corporation Electronic device and heat sink assembly
US5365108A (en) * 1992-11-19 1994-11-15 Sundstrand Corporation Metal matrix composite semiconductor power switch assembly
TW363262B (en) * 1995-10-31 1999-07-01 Nhk Spring Co Ltd Metallic electronic component packaging arrangement
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
US6388272B1 (en) 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
DE10040591C1 (de) * 2000-08-15 2001-11-08 Heraeus Gmbh W C Verfahren zur Herstellung einer Beschichtung auf einem feuerfesten Bauteil und deren Verwendung
US7211884B1 (en) 2002-01-28 2007-05-01 Pacesetter, Inc. Implantable medical device construction using a flexible substrate
US6919504B2 (en) * 2002-12-19 2005-07-19 3M Innovative Properties Company Flexible heat sink
US6705393B1 (en) * 2003-02-25 2004-03-16 Abc Taiwan Electronics Corp. Ceramic heat sink with micro-pores structure
US6849941B1 (en) * 2004-01-07 2005-02-01 Thermagon, Inc. Heat sink and heat spreader assembly
TWI449137B (zh) * 2006-03-23 2014-08-11 製陶技術創新製陶工程股份公司 構件或電路用的攜帶體
JP2009158725A (ja) * 2007-12-27 2009-07-16 Panasonic Corp 半導体装置およびダイボンド材
WO2009157130A1 (ja) 2008-06-23 2009-12-30 パナソニック株式会社 接合構造および電子部品
US10406774B2 (en) * 2016-10-17 2019-09-10 U.S. Department Of Energy Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA615175A (en) * 1961-02-21 J. Kroko Leonard Fused junctions in silicon carbide
NL104185C (enExample) * 1957-08-16
NL230857A (enExample) * 1958-08-26
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier
JPS53130714A (en) * 1977-04-20 1978-11-15 Kogyo Gijutsuin Method of bonding nitride base ceramics and silver
JPS55143042A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Semiconductor device
DE3064598D1 (en) * 1979-11-05 1983-09-22 Hitachi Ltd Electrically insulating substrate and a method of making such a substrate
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010524736A (ja) * 2007-04-24 2010-07-22 セラムテック アクチエンゲゼルシャフト 金属被覆された構成部分を製造するための方法、金属被覆された構成部分、並びに金属被覆の際に構成部分を支持するための支持体
JP2019207992A (ja) * 2018-05-30 2019-12-05 京セラ株式会社 電気素子搭載用パッケージおよび電気装置

Also Published As

Publication number Publication date
EP0097058A2 (en) 1983-12-28
EP0097058A3 (en) 1984-10-03
US4663649A (en) 1987-05-05
JPS6230159B2 (enExample) 1987-06-30
DE3373894D1 (en) 1987-11-05
KR840005060A (ko) 1984-11-03
EP0097058B1 (en) 1987-09-30

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