DE3373894D1 - Sic sintered body having metallized layer and production method therefor - Google Patents
Sic sintered body having metallized layer and production method thereforInfo
- Publication number
- DE3373894D1 DE3373894D1 DE8383303456T DE3373894T DE3373894D1 DE 3373894 D1 DE3373894 D1 DE 3373894D1 DE 8383303456 T DE8383303456 T DE 8383303456T DE 3373894 T DE3373894 T DE 3373894T DE 3373894 D1 DE3373894 D1 DE 3373894D1
- Authority
- DE
- Germany
- Prior art keywords
- production method
- sintered body
- method therefor
- metallized layer
- sic sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Ceramic Products (AREA)
- Non-Insulated Conductors (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57102202A JPS58223678A (ja) | 1982-06-16 | 1982-06-16 | 金属化層を有するSiC焼結体とその製法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3373894D1 true DE3373894D1 (en) | 1987-11-05 |
Family
ID=14321076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383303456T Expired DE3373894D1 (en) | 1982-06-16 | 1983-06-15 | Sic sintered body having metallized layer and production method therefor |
Country Status (5)
Country | Link |
---|---|
US (1) | US4663649A (de) |
EP (1) | EP0097058B1 (de) |
JP (1) | JPS58223678A (de) |
KR (1) | KR840005060A (de) |
DE (1) | DE3373894D1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59995A (ja) * | 1982-06-16 | 1984-01-06 | 富士通株式会社 | 銅導体多層構造体の製造方法 |
US4784974A (en) * | 1982-08-05 | 1988-11-15 | Olin Corporation | Method of making a hermetically sealed semiconductor casing |
CH660176A5 (de) * | 1984-07-06 | 1987-03-31 | Bbc Brown Boveri & Cie | Metall-keramik-verbundelement und verfahren zu dessen herstellung. |
DE3573137D1 (en) * | 1984-10-03 | 1989-10-26 | Sumitomo Electric Industries | Material for a semiconductor device and process for its manufacture |
JPS61248302A (ja) * | 1985-04-25 | 1986-11-05 | 株式会社日立製作所 | 炭化ケイ素焼結体用メタライズペ−スト |
EP0266210B1 (de) * | 1986-10-29 | 1993-02-17 | Kabushiki Kaisha Toshiba | Elektronischer Apparat mit einem keramischen Substrat |
US4731700A (en) * | 1987-02-12 | 1988-03-15 | Delco Electronics Corporation | Semiconductor connection and crossover apparatus |
US4769345A (en) * | 1987-03-12 | 1988-09-06 | Olin Corporation | Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor |
US5240171A (en) * | 1987-05-21 | 1993-08-31 | Lanxide Technology Company, Lp | Method for surface bonding of ceramic bodies |
JP2548602B2 (ja) * | 1988-04-12 | 1996-10-30 | 株式会社日立製作所 | 半導体実装モジュール |
US5041695A (en) * | 1989-06-01 | 1991-08-20 | Westinghouse Electric Corp. | Co-fired ceramic package for a power circuit |
US5057909A (en) * | 1990-01-29 | 1991-10-15 | International Business Machines Corporation | Electronic device and heat sink assembly |
US5169805A (en) * | 1990-01-29 | 1992-12-08 | International Business Machines Corporation | Method of resiliently mounting an integrated circuit chip to enable conformal heat dissipation |
US5365108A (en) * | 1992-11-19 | 1994-11-15 | Sundstrand Corporation | Metal matrix composite semiconductor power switch assembly |
TW363262B (en) * | 1995-10-31 | 1999-07-01 | Nhk Spring Co Ltd | Metallic electronic component packaging arrangement |
US5929523A (en) * | 1996-03-07 | 1999-07-27 | 3C Semiconductor Corporation | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
US6388272B1 (en) | 1996-03-07 | 2002-05-14 | Caldus Semiconductor, Inc. | W/WC/TAC ohmic and rectifying contacts on SiC |
DE10040591C1 (de) * | 2000-08-15 | 2001-11-08 | Heraeus Gmbh W C | Verfahren zur Herstellung einer Beschichtung auf einem feuerfesten Bauteil und deren Verwendung |
US7211884B1 (en) | 2002-01-28 | 2007-05-01 | Pacesetter, Inc. | Implantable medical device construction using a flexible substrate |
US6919504B2 (en) * | 2002-12-19 | 2005-07-19 | 3M Innovative Properties Company | Flexible heat sink |
US6705393B1 (en) * | 2003-02-25 | 2004-03-16 | Abc Taiwan Electronics Corp. | Ceramic heat sink with micro-pores structure |
US6849941B1 (en) * | 2004-01-07 | 2005-02-01 | Thermagon, Inc. | Heat sink and heat spreader assembly |
TWI449137B (zh) * | 2006-03-23 | 2014-08-11 | Ceramtec Ag | 構件或電路用的攜帶體 |
US20100132932A1 (en) * | 2007-04-24 | 2010-06-03 | Ceramtec Ag | Method for producing a metalized component, corresponding component, and a substrate for supporting the component during metalization |
JP2009158725A (ja) * | 2007-12-27 | 2009-07-16 | Panasonic Corp | 半導体装置およびダイボンド材 |
US8421246B2 (en) | 2008-06-23 | 2013-04-16 | Panasonic Corporation | Joint structure and electronic component |
US10406774B2 (en) * | 2016-10-17 | 2019-09-10 | U.S. Department Of Energy | Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds |
JP7148276B2 (ja) * | 2018-05-30 | 2022-10-05 | 京セラ株式会社 | 発光素子搭載用パッケージおよび発光装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA615175A (en) * | 1961-02-21 | J. Kroko Leonard | Fused junctions in silicon carbide | |
NL230567A (de) * | 1957-08-16 | |||
NL107889C (de) * | 1958-08-26 | |||
US2937324A (en) * | 1959-02-05 | 1960-05-17 | Westinghouse Electric Corp | Silicon carbide rectifier |
JPS53130714A (en) * | 1977-04-20 | 1978-11-15 | Kogyo Gijutsuin | Method of bonding nitride base ceramics and silver |
JPS55143042A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Semiconductor device |
EP0028802B1 (de) * | 1979-11-05 | 1983-08-17 | Hitachi, Ltd. | Elektrisch isolierendes Substrat und Verfahren zur Herstellung eines solchen Substrats |
JPS58101442A (ja) * | 1981-12-11 | 1983-06-16 | Hitachi Ltd | 電気的装置用基板 |
-
1982
- 1982-06-16 JP JP57102202A patent/JPS58223678A/ja active Granted
-
1983
- 1983-06-15 EP EP83303456A patent/EP0097058B1/de not_active Expired
- 1983-06-15 DE DE8383303456T patent/DE3373894D1/de not_active Expired
- 1983-06-16 US US06/504,787 patent/US4663649A/en not_active Expired - Fee Related
- 1983-06-16 KR KR1019830002696A patent/KR840005060A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0097058A2 (de) | 1983-12-28 |
EP0097058A3 (en) | 1984-10-03 |
JPS58223678A (ja) | 1983-12-26 |
KR840005060A (ko) | 1984-11-03 |
US4663649A (en) | 1987-05-05 |
JPS6230159B2 (de) | 1987-06-30 |
EP0097058B1 (de) | 1987-09-30 |
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Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN |
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8339 | Ceased/non-payment of the annual fee |