JPS5821882A - トンネル形ジヨセフソン接合素子の製造方法 - Google Patents

トンネル形ジヨセフソン接合素子の製造方法

Info

Publication number
JPS5821882A
JPS5821882A JP56121578A JP12157881A JPS5821882A JP S5821882 A JPS5821882 A JP S5821882A JP 56121578 A JP56121578 A JP 56121578A JP 12157881 A JP12157881 A JP 12157881A JP S5821882 A JPS5821882 A JP S5821882A
Authority
JP
Japan
Prior art keywords
gas
barrier layer
thin film
tunnel
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56121578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6347153B2 (cg-RX-API-DMAC7.html
Inventor
Hisataka Takenaka
久貴 竹中
Osamu Michigami
修 道上
Yujiro Kato
加藤　雄二郎
Keiichi Tanabe
圭一 田辺
Shizuka Yoshii
吉井　静
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56121578A priority Critical patent/JPS5821882A/ja
Priority to CA000405292A priority patent/CA1168762A/en
Priority to US06/390,116 priority patent/US4412902A/en
Priority to FR8211126A priority patent/FR2508237B1/fr
Priority to NL8202511A priority patent/NL190858C/xx
Publication of JPS5821882A publication Critical patent/JPS5821882A/ja
Publication of JPS6347153B2 publication Critical patent/JPS6347153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP56121578A 1981-06-22 1981-08-03 トンネル形ジヨセフソン接合素子の製造方法 Granted JPS5821882A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56121578A JPS5821882A (ja) 1981-08-03 1981-08-03 トンネル形ジヨセフソン接合素子の製造方法
CA000405292A CA1168762A (en) 1981-06-22 1982-06-16 Method of fabrication for josephson tunnel junction
US06/390,116 US4412902A (en) 1981-06-22 1982-06-18 Method of fabrication of Josephson tunnel junction
FR8211126A FR2508237B1 (fr) 1981-06-22 1982-06-22 Procede pour la fabrication d'une jonction de josephson, notamment d'une jonction tunnel de josephson
NL8202511A NL190858C (nl) 1981-06-22 1982-06-22 Werkwijze voor het vervaardigen van een Josephson-tunnelovergang.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56121578A JPS5821882A (ja) 1981-08-03 1981-08-03 トンネル形ジヨセフソン接合素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5821882A true JPS5821882A (ja) 1983-02-08
JPS6347153B2 JPS6347153B2 (cg-RX-API-DMAC7.html) 1988-09-20

Family

ID=14814703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56121578A Granted JPS5821882A (ja) 1981-06-22 1981-08-03 トンネル形ジヨセフソン接合素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5821882A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPS6347153B2 (cg-RX-API-DMAC7.html) 1988-09-20

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