JPS6258676B2 - - Google Patents

Info

Publication number
JPS6258676B2
JPS6258676B2 JP57037792A JP3779282A JPS6258676B2 JP S6258676 B2 JPS6258676 B2 JP S6258676B2 JP 57037792 A JP57037792 A JP 57037792A JP 3779282 A JP3779282 A JP 3779282A JP S6258676 B2 JPS6258676 B2 JP S6258676B2
Authority
JP
Japan
Prior art keywords
gas
tunnel
barrier layer
tunnel barrier
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57037792A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58154280A (ja
Inventor
Osamu Michigami
Hisataka Takenaka
Jujiro Kato
Keiichi Tanabe
Shizuka Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57037792A priority Critical patent/JPS58154280A/ja
Publication of JPS58154280A publication Critical patent/JPS58154280A/ja
Publication of JPS6258676B2 publication Critical patent/JPS6258676B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP57037792A 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法 Granted JPS58154280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57037792A JPS58154280A (ja) 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037792A JPS58154280A (ja) 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法

Publications (2)

Publication Number Publication Date
JPS58154280A JPS58154280A (ja) 1983-09-13
JPS6258676B2 true JPS6258676B2 (cg-RX-API-DMAC7.html) 1987-12-07

Family

ID=12507341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037792A Granted JPS58154280A (ja) 1982-03-10 1982-03-10 トンネル形ジヨセフソン素子の作製方法

Country Status (1)

Country Link
JP (1) JPS58154280A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04101917U (ja) * 1991-02-04 1992-09-02 日本電信電話株式会社 磁気カード

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0311675A (ja) * 1989-06-08 1991-01-18 Agency Of Ind Science & Technol ジョセフソン接合素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04101917U (ja) * 1991-02-04 1992-09-02 日本電信電話株式会社 磁気カード

Also Published As

Publication number Publication date
JPS58154280A (ja) 1983-09-13

Similar Documents

Publication Publication Date Title
US4412902A (en) Method of fabrication of Josephson tunnel junction
EP0013130B1 (en) Method of producing josephson elements of the tunneling junction type
US3220938A (en) Oxide underlay for printed circuit components
EP0419361B1 (en) Electrode for electrical connection to oxide superconductor and method for forming the same
US4135998A (en) Method for forming pt-si schottky barrier contact
JPS6258676B2 (cg-RX-API-DMAC7.html)
Seki et al. Formation of high‐quality, magnetron‐sputtered Ta2O5 films by controlling the transition region at the Ta2O5/Si interface
US3391024A (en) Process for preparing improved cryogenic circuits
JPS587890A (ja) トンネル形ジヨセフソン接合素子の製造方法
JP2667231B2 (ja) ジョセフソン素子の製造方法
Faith et al. Comparative Investigation of CF 4‐Plasma, Ar‐Plasma, and Dilute‐HF‐Dip Cleaning Methods for (Al‐Si)/n+ Si Contacts
JPH0523073B2 (cg-RX-API-DMAC7.html)
JPH0375204A (ja) 酸化物超伝導膜パターン作製法
JPS6258677B2 (cg-RX-API-DMAC7.html)
JPS6257273B2 (cg-RX-API-DMAC7.html)
JPS613481A (ja) トンネル型ジヨセフソン素子及びその作製方法
JPH038368A (ja) 薄膜抵抗体の形成方法
JPS6347153B2 (cg-RX-API-DMAC7.html)
JPS61111589A (ja) トンネル型ジヨセフソン素子の製造方法
JPH0828538B2 (ja) 超電導薄膜パタンの形成方法
JPS61144084A (ja) ジョセフソン接合素子の形成方法
JPS58209182A (ja) ジヨセフソン接合素子の製造方法
JPS6143488A (ja) 超伝導コンタクトの製造方法
JPS63299283A (ja) 酸化物超伝導体接合の形成方法
JPS5830178A (ja) トンネル形ジヨセフソン接合素子の製造方法