JPS5821880A - 酸化物超伝導薄膜の製造方法 - Google Patents

酸化物超伝導薄膜の製造方法

Info

Publication number
JPS5821880A
JPS5821880A JP56119217A JP11921781A JPS5821880A JP S5821880 A JPS5821880 A JP S5821880A JP 56119217 A JP56119217 A JP 56119217A JP 11921781 A JP11921781 A JP 11921781A JP S5821880 A JPS5821880 A JP S5821880A
Authority
JP
Japan
Prior art keywords
thin film
oxides
argon gas
lithium
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56119217A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161717B2 (enrdf_load_stackoverflow
Inventor
Takashi Inukai
犬飼　隆
Toshiaki Murakami
敏明 村上
Minoru Suzuki
実 鈴木
Yoichi Enomoto
陽一 榎本
Takahiro Inamura
稲村　隆弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56119217A priority Critical patent/JPS5821880A/ja
Publication of JPS5821880A publication Critical patent/JPS5821880A/ja
Publication of JPS6161717B2 publication Critical patent/JPS6161717B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
JP56119217A 1981-07-31 1981-07-31 酸化物超伝導薄膜の製造方法 Granted JPS5821880A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56119217A JPS5821880A (ja) 1981-07-31 1981-07-31 酸化物超伝導薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56119217A JPS5821880A (ja) 1981-07-31 1981-07-31 酸化物超伝導薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5821880A true JPS5821880A (ja) 1983-02-08
JPS6161717B2 JPS6161717B2 (enrdf_load_stackoverflow) 1986-12-26

Family

ID=14755846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56119217A Granted JPS5821880A (ja) 1981-07-31 1981-07-31 酸化物超伝導薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5821880A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105075A (ja) * 1985-10-31 1987-05-15 Furuno Electric Co Ltd 魚群探知方法
JPS63190713A (ja) * 1987-01-30 1988-08-08 Hitachi Ltd 酸化物超伝導材料

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62105075A (ja) * 1985-10-31 1987-05-15 Furuno Electric Co Ltd 魚群探知方法
JPS63190713A (ja) * 1987-01-30 1988-08-08 Hitachi Ltd 酸化物超伝導材料

Also Published As

Publication number Publication date
JPS6161717B2 (enrdf_load_stackoverflow) 1986-12-26

Similar Documents

Publication Publication Date Title
Gilbert et al. Superconducting BaPb1− xBixO3 ceramic films prepared by RF Sputtering
JPH03504713A (ja) 超伝導性の薄膜の製作
JPS5821880A (ja) 酸化物超伝導薄膜の製造方法
JPH04295015A (ja) Ｂｉ系酸化物超電導薄膜の製造方法
JPH09208394A (ja) 強誘電体薄膜及び強誘電体薄膜コンデンサの製造方法
KR20070110237A (ko) 전계 가변형 ＢＳＴ-Ｐｂ계 파이로클로어 복합 유전체박막과 제조방법
JPH02252697A (ja) 超伝導セラミックス薄膜の製法
JPH01208327A (ja) 薄膜超電導体の製造方法
JP3105014B2 (ja) 超伝導薄膜の製造方法
JPS61194786A (ja) 酸化物超伝導体薄膜の熱処理方法
JPH01246107A (ja) 超電導薄膜
KR0157625B1 (ko) Bi확산에 의한 고온 초전도 박막의 제조방법
JP2557446B2 (ja) 複合酸化物系超電導薄膜の製造方法
JPH0375204A (ja) 酸化物超伝導膜パターン作製法
JPH01188420A (ja) 酸化物超伝導薄膜の製法
JPH02162616A (ja) 酸化物高温超電導膜の製造方法
JPH0238359A (ja) 超電導体の製造方法
JPH0238310A (ja) 酸化物高温超電導薄膜の製造方法
JP2817181B2 (ja) 高臨界電流密度を有するＢｉ系超電導セラミックス薄板の製造法
JP3102936B2 (ja) 超電導デバイス及びその製造方法
JPS63236794A (ja) 酸化物超伝導薄膜の作製方法
JPH05183208A (ja) 超電導素子及びその製造方法
US5128315A (en) Superconducting device and method of producing superconducting thin film
JP3068917B2 (ja) 超電導デバイス
JPH01278449A (ja) 酸化物超電導体の製造方法