JPS58215056A - 半導体素子およびその形成方法 - Google Patents

半導体素子およびその形成方法

Info

Publication number
JPS58215056A
JPS58215056A JP57097670A JP9767082A JPS58215056A JP S58215056 A JPS58215056 A JP S58215056A JP 57097670 A JP57097670 A JP 57097670A JP 9767082 A JP9767082 A JP 9767082A JP S58215056 A JPS58215056 A JP S58215056A
Authority
JP
Japan
Prior art keywords
layer
heat
forming
wiring structure
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57097670A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0320898B2 (enExample
Inventor
Hideaki Nakagome
英明 中込
Kohei Yamada
耕平 山田
Hajime Terakado
寺門　肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57097670A priority Critical patent/JPS58215056A/ja
Publication of JPS58215056A publication Critical patent/JPS58215056A/ja
Publication of JPH0320898B2 publication Critical patent/JPH0320898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57097670A 1982-06-09 1982-06-09 半導体素子およびその形成方法 Granted JPS58215056A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57097670A JPS58215056A (ja) 1982-06-09 1982-06-09 半導体素子およびその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57097670A JPS58215056A (ja) 1982-06-09 1982-06-09 半導体素子およびその形成方法

Publications (2)

Publication Number Publication Date
JPS58215056A true JPS58215056A (ja) 1983-12-14
JPH0320898B2 JPH0320898B2 (enExample) 1991-03-20

Family

ID=14198460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57097670A Granted JPS58215056A (ja) 1982-06-09 1982-06-09 半導体素子およびその形成方法

Country Status (1)

Country Link
JP (1) JPS58215056A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012248795A (ja) * 2011-05-31 2012-12-13 Toshiba Corp 半導体発光素子およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4740148A (enExample) * 1968-11-04 1972-10-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4740148A (enExample) * 1968-11-04 1972-10-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012248795A (ja) * 2011-05-31 2012-12-13 Toshiba Corp 半導体発光素子およびその製造方法
US9147798B2 (en) 2011-05-31 2015-09-29 Kabushiki Kaisha Toshiba Semiconductor light emitting element and method for manufacturing same

Also Published As

Publication number Publication date
JPH0320898B2 (enExample) 1991-03-20

Similar Documents

Publication Publication Date Title
JPH051623B2 (enExample)
JPH01103876A (ja) 絶縁ゲート型半導体装置
JPH01202841A (ja) 半導体集積回路装置及びその製造方法
JPS58215056A (ja) 半導体素子およびその形成方法
JPS6364057B2 (enExample)
JP3270985B2 (ja) 半導体装置の製造方法
US6225222B1 (en) Diffusion barrier enhancement for sub-micron aluminum-silicon contacts
JP2816684B2 (ja) 複数のダイオードの製造方法
CA1127322A (en) Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum
KR100265993B1 (ko) 반도체장치의 금속배선층 형성방법
JPH0454393B2 (enExample)
US5801445A (en) Semiconductor device and method of manufacturing same
JPS6340374A (ja) Ｍｏｓ型半導体装置およびその製造方法
JP3219969B2 (ja) 発光ダイオードの製造方法
JP2005079233A (ja) ショットキーダイオードとその製造方法
JPS6160580B2 (enExample)
JPH033270A (ja) 半導体装置
JPH0441510B2 (enExample)
JPS61231760A (ja) 化合物半導体素子
JP2001135639A (ja) 半導体装置およびその製造方法
JPH0414497B2 (enExample)
JPH0521374A (ja) 半導体装置およびその製造方法
KR960011182B1 (ko) 바이폴라 소자의 제조방법
KR100342827B1 (ko) 반도체소자의베리어금속층형성방법
JPH03236226A (ja) 半導体装置の製造方法