JPH0320898B2 - - Google Patents
Info
- Publication number
- JPH0320898B2 JPH0320898B2 JP57097670A JP9767082A JPH0320898B2 JP H0320898 B2 JPH0320898 B2 JP H0320898B2 JP 57097670 A JP57097670 A JP 57097670A JP 9767082 A JP9767082 A JP 9767082A JP H0320898 B2 JPH0320898 B2 JP H0320898B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating film
- main surface
- wiring
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10W20/01—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57097670A JPS58215056A (ja) | 1982-06-09 | 1982-06-09 | 半導体素子およびその形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57097670A JPS58215056A (ja) | 1982-06-09 | 1982-06-09 | 半導体素子およびその形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58215056A JPS58215056A (ja) | 1983-12-14 |
| JPH0320898B2 true JPH0320898B2 (enExample) | 1991-03-20 |
Family
ID=14198460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57097670A Granted JPS58215056A (ja) | 1982-06-09 | 1982-06-09 | 半導体素子およびその形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58215056A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012248795A (ja) * | 2011-05-31 | 2012-12-13 | Toshiba Corp | 半導体発光素子およびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4740148A (enExample) * | 1968-11-04 | 1972-10-11 |
-
1982
- 1982-06-09 JP JP57097670A patent/JPS58215056A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58215056A (ja) | 1983-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4899199A (en) | Schottky diode with titanium or like layer contacting the dielectric layer | |
| JPH051623B2 (enExample) | ||
| US4729969A (en) | Method for forming silicide electrode in semiconductor device | |
| JPH0145224B2 (enExample) | ||
| US4695869A (en) | GAAS semiconductor device | |
| JP2605030B2 (ja) | 直交バイポーラ−トランジスタ | |
| US4888306A (en) | Method of manufacturing a bipolar transistor | |
| JP3270985B2 (ja) | 半導体装置の製造方法 | |
| JPS6364057B2 (enExample) | ||
| JPH0320898B2 (enExample) | ||
| US5801445A (en) | Semiconductor device and method of manufacturing same | |
| JPH0837289A (ja) | 半導体装置及びその製造方法 | |
| JPS6346984B2 (enExample) | ||
| TWI857265B (zh) | 半導體裝置及其製程 | |
| JP2668528B2 (ja) | 半導体装置の製造方法 | |
| JP3688335B2 (ja) | 半導体集積回路装置およびその製造方法ならびに半導体ウエハ | |
| JPH01262654A (ja) | 半導体装置 | |
| JPS63111665A (ja) | 半導体装置 | |
| JPS6160580B2 (enExample) | ||
| JP3823826B2 (ja) | 半導体素子の製造方法 | |
| JPS60224229A (ja) | 半導体装置 | |
| JP2001135639A (ja) | 半導体装置およびその製造方法 | |
| JPS6133257B2 (enExample) | ||
| JPS6118350B2 (enExample) | ||
| JPS6218069A (ja) | 半導体装置 |