JPS58210617A - 電子ビ−ム描画方法 - Google Patents

電子ビ−ム描画方法

Info

Publication number
JPS58210617A
JPS58210617A JP9291882A JP9291882A JPS58210617A JP S58210617 A JPS58210617 A JP S58210617A JP 9291882 A JP9291882 A JP 9291882A JP 9291882 A JP9291882 A JP 9291882A JP S58210617 A JPS58210617 A JP S58210617A
Authority
JP
Japan
Prior art keywords
deflection
accelerating voltage
acceleration voltage
turn
minimum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9291882A
Other languages
English (en)
Japanese (ja)
Other versions
JPH056337B2 (enrdf_load_stackoverflow
Inventor
Tadahiro Takigawa
忠宏 滝川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9291882A priority Critical patent/JPS58210617A/ja
Publication of JPS58210617A publication Critical patent/JPS58210617A/ja
Publication of JPH056337B2 publication Critical patent/JPH056337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP9291882A 1982-05-31 1982-05-31 電子ビ−ム描画方法 Granted JPS58210617A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9291882A JPS58210617A (ja) 1982-05-31 1982-05-31 電子ビ−ム描画方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9291882A JPS58210617A (ja) 1982-05-31 1982-05-31 電子ビ−ム描画方法

Publications (2)

Publication Number Publication Date
JPS58210617A true JPS58210617A (ja) 1983-12-07
JPH056337B2 JPH056337B2 (enrdf_load_stackoverflow) 1993-01-26

Family

ID=14067861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9291882A Granted JPS58210617A (ja) 1982-05-31 1982-05-31 電子ビ−ム描画方法

Country Status (1)

Country Link
JP (1) JPS58210617A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201624A (ja) * 1984-03-26 1985-10-12 Jeol Ltd 電子線描画装置
JP2013207045A (ja) * 2012-03-28 2013-10-07 Toppan Printing Co Ltd パターン描画方法およびそれを用いるパターン描画装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380168A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Exposure method for electronic beam
JPS5382176A (en) * 1976-12-27 1978-07-20 Ibm Method of forming resist pattern
JPS5726436A (en) * 1980-07-23 1982-02-12 Fujitsu Ltd Extraction pattern for electron scattering intensity distribution
JPS5783029A (en) * 1980-11-11 1982-05-24 Fujitsu Ltd Exposure of electron beam

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380168A (en) * 1976-12-25 1978-07-15 Fujitsu Ltd Exposure method for electronic beam
JPS5382176A (en) * 1976-12-27 1978-07-20 Ibm Method of forming resist pattern
JPS5726436A (en) * 1980-07-23 1982-02-12 Fujitsu Ltd Extraction pattern for electron scattering intensity distribution
JPS5783029A (en) * 1980-11-11 1982-05-24 Fujitsu Ltd Exposure of electron beam

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201624A (ja) * 1984-03-26 1985-10-12 Jeol Ltd 電子線描画装置
JP2013207045A (ja) * 2012-03-28 2013-10-07 Toppan Printing Co Ltd パターン描画方法およびそれを用いるパターン描画装置

Also Published As

Publication number Publication date
JPH056337B2 (enrdf_load_stackoverflow) 1993-01-26

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