JPS5783029A - Exposure of electron beam - Google Patents

Exposure of electron beam

Info

Publication number
JPS5783029A
JPS5783029A JP15839780A JP15839780A JPS5783029A JP S5783029 A JPS5783029 A JP S5783029A JP 15839780 A JP15839780 A JP 15839780A JP 15839780 A JP15839780 A JP 15839780A JP S5783029 A JPS5783029 A JP S5783029A
Authority
JP
Japan
Prior art keywords
irradiation
patterns
electron beam
scattering
doughnut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15839780A
Other languages
Japanese (ja)
Other versions
JPS6262046B2 (en
Inventor
Noriaki Nakayama
Shigeru Furuya
Yasuhide Machida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15839780A priority Critical patent/JPS5783029A/en
Publication of JPS5783029A publication Critical patent/JPS5783029A/en
Publication of JPS6262046B2 publication Critical patent/JPS6262046B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To perform the appropriate exposure of an electron beam by a method wherein the prescribed quantity of the annular patterns of round, square, multipolygonal shapes and the like for a positive type resist film are formed, the electron beams having different irradiation doses are irradiated and a critical quantity of irradiation with which the center of the pattern will begin to be removed is used as an unknown quantity required for the solution of the formula for the intensity distribution of electronic scattering. CONSTITUTION:Even if the pattern of an ordinary resist film looks like to be in the desired shape when viewed from above, the measurements of the lower surface may sometimes be larger than the measurements of the upper surface, or the shape of the side section may sometimes be trapezoidally formed. Accordingly, when an ordinary ezposure is performed, an appropriate exposure may sometimes not be performed due to a forward scattering or a rearward scattering. Therefore, doughnut-shaped patterns P11-P1m with the inner diameter of 2W1 and doughnut-shaped patterns P21-P2m with the inside diameter of 2W2 are prepared, the same quantity of electron beam is irradiated for the patterns in the same row and an insufficiently exposed or overexposed sample is obtained by observing the surface of the section. Then the formula is solved using the quantity of critical irradiation and the desired irradiation dose is obtained.
JP15839780A 1980-11-11 1980-11-11 Exposure of electron beam Granted JPS5783029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15839780A JPS5783029A (en) 1980-11-11 1980-11-11 Exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15839780A JPS5783029A (en) 1980-11-11 1980-11-11 Exposure of electron beam

Publications (2)

Publication Number Publication Date
JPS5783029A true JPS5783029A (en) 1982-05-24
JPS6262046B2 JPS6262046B2 (en) 1987-12-24

Family

ID=15670841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15839780A Granted JPS5783029A (en) 1980-11-11 1980-11-11 Exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS5783029A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210617A (en) * 1982-05-31 1983-12-07 Toshiba Corp Electron beam image drawing
JPS58210616A (en) * 1982-05-31 1983-12-07 Toshiba Corp Electron beam image drawing
JPH02220426A (en) * 1989-02-21 1990-09-03 Matsushita Electric Ind Co Ltd Electron beam exposure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210617A (en) * 1982-05-31 1983-12-07 Toshiba Corp Electron beam image drawing
JPS58210616A (en) * 1982-05-31 1983-12-07 Toshiba Corp Electron beam image drawing
JPH056336B2 (en) * 1982-05-31 1993-01-26 Tokyo Shibaura Electric Co
JPH056337B2 (en) * 1982-05-31 1993-01-26 Tokyo Shibaura Electric Co
JPH02220426A (en) * 1989-02-21 1990-09-03 Matsushita Electric Ind Co Ltd Electron beam exposure

Also Published As

Publication number Publication date
JPS6262046B2 (en) 1987-12-24

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