JPS5783029A - Exposure of electron beam - Google Patents
Exposure of electron beamInfo
- Publication number
- JPS5783029A JPS5783029A JP15839780A JP15839780A JPS5783029A JP S5783029 A JPS5783029 A JP S5783029A JP 15839780 A JP15839780 A JP 15839780A JP 15839780 A JP15839780 A JP 15839780A JP S5783029 A JPS5783029 A JP S5783029A
- Authority
- JP
- Japan
- Prior art keywords
- irradiation
- patterns
- electron beam
- scattering
- doughnut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To perform the appropriate exposure of an electron beam by a method wherein the prescribed quantity of the annular patterns of round, square, multipolygonal shapes and the like for a positive type resist film are formed, the electron beams having different irradiation doses are irradiated and a critical quantity of irradiation with which the center of the pattern will begin to be removed is used as an unknown quantity required for the solution of the formula for the intensity distribution of electronic scattering. CONSTITUTION:Even if the pattern of an ordinary resist film looks like to be in the desired shape when viewed from above, the measurements of the lower surface may sometimes be larger than the measurements of the upper surface, or the shape of the side section may sometimes be trapezoidally formed. Accordingly, when an ordinary ezposure is performed, an appropriate exposure may sometimes not be performed due to a forward scattering or a rearward scattering. Therefore, doughnut-shaped patterns P11-P1m with the inner diameter of 2W1 and doughnut-shaped patterns P21-P2m with the inside diameter of 2W2 are prepared, the same quantity of electron beam is irradiated for the patterns in the same row and an insufficiently exposed or overexposed sample is obtained by observing the surface of the section. Then the formula is solved using the quantity of critical irradiation and the desired irradiation dose is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15839780A JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15839780A JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5783029A true JPS5783029A (en) | 1982-05-24 |
JPS6262046B2 JPS6262046B2 (en) | 1987-12-24 |
Family
ID=15670841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15839780A Granted JPS5783029A (en) | 1980-11-11 | 1980-11-11 | Exposure of electron beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5783029A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210617A (en) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | Electron beam image drawing |
JPS58210616A (en) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | Electron beam image drawing |
JPH02220426A (en) * | 1989-02-21 | 1990-09-03 | Matsushita Electric Ind Co Ltd | Electron beam exposure |
-
1980
- 1980-11-11 JP JP15839780A patent/JPS5783029A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210617A (en) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | Electron beam image drawing |
JPS58210616A (en) * | 1982-05-31 | 1983-12-07 | Toshiba Corp | Electron beam image drawing |
JPH056336B2 (en) * | 1982-05-31 | 1993-01-26 | Tokyo Shibaura Electric Co | |
JPH056337B2 (en) * | 1982-05-31 | 1993-01-26 | Tokyo Shibaura Electric Co | |
JPH02220426A (en) * | 1989-02-21 | 1990-09-03 | Matsushita Electric Ind Co Ltd | Electron beam exposure |
Also Published As
Publication number | Publication date |
---|---|
JPS6262046B2 (en) | 1987-12-24 |
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