JPS5683030A - Exposing method of electronic beam - Google Patents

Exposing method of electronic beam

Info

Publication number
JPS5683030A
JPS5683030A JP16102279A JP16102279A JPS5683030A JP S5683030 A JPS5683030 A JP S5683030A JP 16102279 A JP16102279 A JP 16102279A JP 16102279 A JP16102279 A JP 16102279A JP S5683030 A JPS5683030 A JP S5683030A
Authority
JP
Japan
Prior art keywords
proximity effect
exposed
pattern
distance
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16102279A
Other languages
Japanese (ja)
Other versions
JPS638608B2 (en
Inventor
Yasuhide Machida
Noriaki Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16102279A priority Critical patent/JPS5683030A/en
Publication of JPS5683030A publication Critical patent/JPS5683030A/en
Publication of JPS638608B2 publication Critical patent/JPS638608B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain the highly precise drawing of a microscopic pattern by removing the proximity effect using a method wherein the portions of the exposed pattern, having a smaller measurement of the distance to the adjoining pattern than the prescribed measurement, are discriminated and a reduced amount of exposure is exposed on said portions. CONSTITUTION:The portion B1, where the distance l between patterns A and B arranged in close vicinity each other is smaller than the distance l0 to be effected by the proximity effect arising from the reflection and scattering of the electronic beam on the substrate surface, is discriminated. In the case of the patterns A and B1, they are exposed after the amount of exposure per unit area is corrected to a smaller value taking into consideration of the proximity effect. The portion B2 having no proximity effect is exposed with the prescribed amount of exposure. Hence, the narrowing of the pattern interval due to an overexposure caused by the proximity effect is prevented and a highly accurate drawing can be performed.
JP16102279A 1979-12-12 1979-12-12 Exposing method of electronic beam Granted JPS5683030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16102279A JPS5683030A (en) 1979-12-12 1979-12-12 Exposing method of electronic beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16102279A JPS5683030A (en) 1979-12-12 1979-12-12 Exposing method of electronic beam

Publications (2)

Publication Number Publication Date
JPS5683030A true JPS5683030A (en) 1981-07-07
JPS638608B2 JPS638608B2 (en) 1988-02-23

Family

ID=15727093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16102279A Granted JPS5683030A (en) 1979-12-12 1979-12-12 Exposing method of electronic beam

Country Status (1)

Country Link
JP (1) JPS5683030A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843516A (en) * 1981-09-08 1983-03-14 Fujitsu Ltd Exposure of electron beam
JPS5861628A (en) * 1981-10-08 1983-04-12 Nippon Telegr & Teleph Corp <Ntt> Correction of proximity effect at electron beam exposure
US5867253A (en) * 1996-09-30 1999-02-02 Mitsubishi Denki Kabushiki Kaisha Method of correcting light proximity effect

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02131608U (en) * 1989-04-07 1990-11-01

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362477A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Electron beam drawing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362477A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Electron beam drawing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843516A (en) * 1981-09-08 1983-03-14 Fujitsu Ltd Exposure of electron beam
JPH0336292B2 (en) * 1981-09-08 1991-05-31 Fujitsu Ltd
JPS5861628A (en) * 1981-10-08 1983-04-12 Nippon Telegr & Teleph Corp <Ntt> Correction of proximity effect at electron beam exposure
JPS6317331B2 (en) * 1981-10-08 1988-04-13 Nippon Telegraph & Telephone
US5867253A (en) * 1996-09-30 1999-02-02 Mitsubishi Denki Kabushiki Kaisha Method of correcting light proximity effect

Also Published As

Publication number Publication date
JPS638608B2 (en) 1988-02-23

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