JPS5769742A - Inspecting method for accuracy of pattern - Google Patents

Inspecting method for accuracy of pattern

Info

Publication number
JPS5769742A
JPS5769742A JP55147155A JP14715580A JPS5769742A JP S5769742 A JPS5769742 A JP S5769742A JP 55147155 A JP55147155 A JP 55147155A JP 14715580 A JP14715580 A JP 14715580A JP S5769742 A JPS5769742 A JP S5769742A
Authority
JP
Japan
Prior art keywords
exposed
region
pattern
accuracy
reference mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55147155A
Other languages
Japanese (ja)
Inventor
Hisashi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP55147155A priority Critical patent/JPS5769742A/en
Publication of JPS5769742A publication Critical patent/JPS5769742A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To inspect the accuracy of a pattern from the superposing degree by providing two reference marks on the first exposed region when one pattern is divided into a plurality of exposed regions to be exposed, and exposing the first reference mark before the exposure and exposing the second reference mark after the exposure. CONSTITUTION:Exposed region is divided into a plurality of regions, and the first exposed region 13 is exposed with the first reference mark 17 provided in advance at the time of exposing the first region 13. Then, the exposed region 14 is exposed, is sequentially set and the entire region is exposed. Finally, it is returned to the exposed region 13, and the second reference mark 19 set in advance is exposed. The displacement of the two marks 17, 19 is measured to inspect the accracy of the pattern. In this manner, the accuracy of the long distance exposure can be measured readily.
JP55147155A 1980-10-20 1980-10-20 Inspecting method for accuracy of pattern Pending JPS5769742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147155A JPS5769742A (en) 1980-10-20 1980-10-20 Inspecting method for accuracy of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147155A JPS5769742A (en) 1980-10-20 1980-10-20 Inspecting method for accuracy of pattern

Publications (1)

Publication Number Publication Date
JPS5769742A true JPS5769742A (en) 1982-04-28

Family

ID=15423824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147155A Pending JPS5769742A (en) 1980-10-20 1980-10-20 Inspecting method for accuracy of pattern

Country Status (1)

Country Link
JP (1) JPS5769742A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132327A (en) * 1981-02-09 1982-08-16 Oki Electric Ind Co Ltd Measurement of superposition accuracy of mask for integrated circuit
JPS59124127A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Evaluation of electron beam exposure pattern
JPH05129178A (en) * 1991-10-31 1993-05-25 Toshiba Corp Method for measuring misalignment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630723A (en) * 1979-08-21 1981-03-27 Toshiba Corp Pattern formation by electron beam exposing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630723A (en) * 1979-08-21 1981-03-27 Toshiba Corp Pattern formation by electron beam exposing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132327A (en) * 1981-02-09 1982-08-16 Oki Electric Ind Co Ltd Measurement of superposition accuracy of mask for integrated circuit
JPS59124127A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Evaluation of electron beam exposure pattern
JPH05129178A (en) * 1991-10-31 1993-05-25 Toshiba Corp Method for measuring misalignment

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