JPS58206155A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58206155A
JPS58206155A JP57088568A JP8856882A JPS58206155A JP S58206155 A JPS58206155 A JP S58206155A JP 57088568 A JP57088568 A JP 57088568A JP 8856882 A JP8856882 A JP 8856882A JP S58206155 A JPS58206155 A JP S58206155A
Authority
JP
Japan
Prior art keywords
bevel
layer
emitter
etching
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57088568A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0429223B2 (enExample
Inventor
Masami Iwasaki
岩崎　政美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57088568A priority Critical patent/JPS58206155A/ja
Publication of JPS58206155A publication Critical patent/JPS58206155A/ja
Publication of JPH0429223B2 publication Critical patent/JPH0429223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP57088568A 1982-05-25 1982-05-25 半導体装置 Granted JPS58206155A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57088568A JPS58206155A (ja) 1982-05-25 1982-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57088568A JPS58206155A (ja) 1982-05-25 1982-05-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS58206155A true JPS58206155A (ja) 1983-12-01
JPH0429223B2 JPH0429223B2 (enExample) 1992-05-18

Family

ID=13946461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57088568A Granted JPS58206155A (ja) 1982-05-25 1982-05-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS58206155A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154564A (ja) * 1984-01-24 1985-08-14 Fuji Electric Corp Res & Dev Ltd 半導体装置
JP2011124325A (ja) * 2009-12-09 2011-06-23 Renesas Electronics Corp 半導体装置、及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5285481A (en) * 1976-01-06 1977-07-15 Westinghouse Electric Corp Transistor
JPS5412268A (en) * 1977-06-28 1979-01-29 Mitsubishi Electric Corp Production of semiconductor device
JPS5665667U (enExample) * 1979-10-24 1981-06-01

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5285481A (en) * 1976-01-06 1977-07-15 Westinghouse Electric Corp Transistor
JPS5412268A (en) * 1977-06-28 1979-01-29 Mitsubishi Electric Corp Production of semiconductor device
JPS5665667U (enExample) * 1979-10-24 1981-06-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154564A (ja) * 1984-01-24 1985-08-14 Fuji Electric Corp Res & Dev Ltd 半導体装置
JP2011124325A (ja) * 2009-12-09 2011-06-23 Renesas Electronics Corp 半導体装置、及びその製造方法

Also Published As

Publication number Publication date
JPH0429223B2 (enExample) 1992-05-18

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