JPH0429223B2 - - Google Patents

Info

Publication number
JPH0429223B2
JPH0429223B2 JP57088568A JP8856882A JPH0429223B2 JP H0429223 B2 JPH0429223 B2 JP H0429223B2 JP 57088568 A JP57088568 A JP 57088568A JP 8856882 A JP8856882 A JP 8856882A JP H0429223 B2 JPH0429223 B2 JP H0429223B2
Authority
JP
Japan
Prior art keywords
layer
bevel
emitter
semiconductor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57088568A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58206155A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57088568A priority Critical patent/JPS58206155A/ja
Publication of JPS58206155A publication Critical patent/JPS58206155A/ja
Publication of JPH0429223B2 publication Critical patent/JPH0429223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP57088568A 1982-05-25 1982-05-25 半導体装置 Granted JPS58206155A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57088568A JPS58206155A (ja) 1982-05-25 1982-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57088568A JPS58206155A (ja) 1982-05-25 1982-05-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS58206155A JPS58206155A (ja) 1983-12-01
JPH0429223B2 true JPH0429223B2 (enExample) 1992-05-18

Family

ID=13946461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57088568A Granted JPS58206155A (ja) 1982-05-25 1982-05-25 半導体装置

Country Status (1)

Country Link
JP (1) JPS58206155A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154564A (ja) * 1984-01-24 1985-08-14 Fuji Electric Corp Res & Dev Ltd 半導体装置
JP5520024B2 (ja) * 2009-12-09 2014-06-11 ルネサスエレクトロニクス株式会社 半導体装置、及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042947A (en) * 1976-01-06 1977-08-16 Westinghouse Electric Corporation High voltage transistor with high gain
JPS5412268A (en) * 1977-06-28 1979-01-29 Mitsubishi Electric Corp Production of semiconductor device
JPS5665667U (enExample) * 1979-10-24 1981-06-01

Also Published As

Publication number Publication date
JPS58206155A (ja) 1983-12-01

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