JPS58204574A - 複合型光半導体装置 - Google Patents

複合型光半導体装置

Info

Publication number
JPS58204574A
JPS58204574A JP57087418A JP8741882A JPS58204574A JP S58204574 A JPS58204574 A JP S58204574A JP 57087418 A JP57087418 A JP 57087418A JP 8741882 A JP8741882 A JP 8741882A JP S58204574 A JPS58204574 A JP S58204574A
Authority
JP
Japan
Prior art keywords
thin film
substrate
light emitting
layer
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57087418A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0312474B2 (Direct
Inventor
Takeshi Koseki
健 小関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57087418A priority Critical patent/JPS58204574A/ja
Publication of JPS58204574A publication Critical patent/JPS58204574A/ja
Publication of JPH0312474B2 publication Critical patent/JPH0312474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
JP57087418A 1982-05-24 1982-05-24 複合型光半導体装置 Granted JPS58204574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57087418A JPS58204574A (ja) 1982-05-24 1982-05-24 複合型光半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57087418A JPS58204574A (ja) 1982-05-24 1982-05-24 複合型光半導体装置

Publications (2)

Publication Number Publication Date
JPS58204574A true JPS58204574A (ja) 1983-11-29
JPH0312474B2 JPH0312474B2 (Direct) 1991-02-20

Family

ID=13914324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57087418A Granted JPS58204574A (ja) 1982-05-24 1982-05-24 複合型光半導体装置

Country Status (1)

Country Link
JP (1) JPS58204574A (Direct)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253283A (ja) * 1984-05-29 1985-12-13 Toshiba Corp 半導体発光素子
US5012301A (en) * 1990-02-22 1991-04-30 Northern Telecom Limited Three terminal semiconductor device
US5361273A (en) * 1992-11-04 1994-11-01 Nec Corporation Semiconductor optical surface transmission device
WO2012022657A1 (de) * 2010-08-18 2012-02-23 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置
WO2018119340A3 (en) * 2016-12-22 2018-08-23 Lumileds Llc Light emitting diodes with sensor segment for operational feedback
US10593841B2 (en) 2016-12-22 2020-03-17 Lumileds Llc Light emitting diodes with sensor segment for operational feedback

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5886788A (ja) * 1981-11-18 1983-05-24 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5886788A (ja) * 1981-11-18 1983-05-24 Nec Corp 半導体レ−ザ・フオトダイオ−ド光集積化素子

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253283A (ja) * 1984-05-29 1985-12-13 Toshiba Corp 半導体発光素子
US5012301A (en) * 1990-02-22 1991-04-30 Northern Telecom Limited Three terminal semiconductor device
US5361273A (en) * 1992-11-04 1994-11-01 Nec Corporation Semiconductor optical surface transmission device
US8878227B2 (en) 2010-08-18 2014-11-04 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
WO2012022657A1 (de) * 2010-08-18 2012-02-23 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置
CN103890973A (zh) * 2011-10-31 2014-06-25 京瓷株式会社 利用了受光发光一体型元件的受光发光装置及传感器装置
JPWO2013065668A1 (ja) * 2011-10-31 2015-04-02 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置
CN103890973B (zh) * 2011-10-31 2016-07-20 京瓷株式会社 利用了受光发光一体型元件的受光发光装置及传感器装置
US9478691B2 (en) 2011-10-31 2016-10-25 Kyocera Corporation Light-receiving and emitting device including integrated light-receiving and emitting element and sensor
WO2018119340A3 (en) * 2016-12-22 2018-08-23 Lumileds Llc Light emitting diodes with sensor segment for operational feedback
US10205064B2 (en) 2016-12-22 2019-02-12 Lumileds Llc Light emitting diodes with sensor segment for operational feedback
US10593841B2 (en) 2016-12-22 2020-03-17 Lumileds Llc Light emitting diodes with sensor segment for operational feedback
US11094851B2 (en) 2016-12-22 2021-08-17 Lumileds Llc Light emitting diodes with sensor segment for operational feedback

Also Published As

Publication number Publication date
JPH0312474B2 (Direct) 1991-02-20

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