JPS58204568A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58204568A
JPS58204568A JP57086627A JP8662782A JPS58204568A JP S58204568 A JPS58204568 A JP S58204568A JP 57086627 A JP57086627 A JP 57086627A JP 8662782 A JP8662782 A JP 8662782A JP S58204568 A JPS58204568 A JP S58204568A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
substrate
film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57086627A
Other languages
English (en)
Japanese (ja)
Other versions
JPH046106B2 (enrdf_load_stackoverflow
Inventor
Takaaki Hagiwara
萩原　隆旦
Shojiro Asai
彰二郎 浅井
Masanobu Miyao
正信 宮尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57086627A priority Critical patent/JPS58204568A/ja
Publication of JPS58204568A publication Critical patent/JPS58204568A/ja
Publication of JPH046106B2 publication Critical patent/JPH046106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57086627A 1982-05-24 1982-05-24 半導体装置 Granted JPS58204568A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57086627A JPS58204568A (ja) 1982-05-24 1982-05-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57086627A JPS58204568A (ja) 1982-05-24 1982-05-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS58204568A true JPS58204568A (ja) 1983-11-29
JPH046106B2 JPH046106B2 (enrdf_load_stackoverflow) 1992-02-04

Family

ID=13892260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57086627A Granted JPS58204568A (ja) 1982-05-24 1982-05-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS58204568A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136367A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4839707A (en) * 1987-08-27 1989-06-13 Hughes Aircraft Company LCMOS displays fabricated with implant treated silicon wafers
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
JPH0579358A (ja) * 1991-09-18 1993-03-30 Matsushita Electric Ind Co Ltd スロツトル開度制御装置及び車両用定速走行装置
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186979A (enrdf_load_stackoverflow) * 1975-01-29 1976-07-30 Nippon Electric Co
JPS5186980A (enrdf_load_stackoverflow) * 1975-01-29 1976-07-30 Nippon Electric Co
JPS5541753A (en) * 1978-09-20 1980-03-24 Fujitsu Ltd Semiconductor memory
JPS56107571A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor memory storage device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186979A (enrdf_load_stackoverflow) * 1975-01-29 1976-07-30 Nippon Electric Co
JPS5186980A (enrdf_load_stackoverflow) * 1975-01-29 1976-07-30 Nippon Electric Co
JPS5541753A (en) * 1978-09-20 1980-03-24 Fujitsu Ltd Semiconductor memory
JPS56107571A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor memory storage device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136367A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4839707A (en) * 1987-08-27 1989-06-13 Hughes Aircraft Company LCMOS displays fabricated with implant treated silicon wafers
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
JPH0579358A (ja) * 1991-09-18 1993-03-30 Matsushita Electric Ind Co Ltd スロツトル開度制御装置及び車両用定速走行装置

Also Published As

Publication number Publication date
JPH046106B2 (enrdf_load_stackoverflow) 1992-02-04

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