JPS58193726A - 蒸着方法 - Google Patents
蒸着方法Info
- Publication number
- JPS58193726A JPS58193726A JP7601082A JP7601082A JPS58193726A JP S58193726 A JPS58193726 A JP S58193726A JP 7601082 A JP7601082 A JP 7601082A JP 7601082 A JP7601082 A JP 7601082A JP S58193726 A JPS58193726 A JP S58193726A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- substrate
- plasma
- deposition method
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7601082A JPS58193726A (ja) | 1982-05-08 | 1982-05-08 | 蒸着方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7601082A JPS58193726A (ja) | 1982-05-08 | 1982-05-08 | 蒸着方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58193726A true JPS58193726A (ja) | 1983-11-11 |
JPS6150147B2 JPS6150147B2 (enrdf_load_stackoverflow) | 1986-11-01 |
Family
ID=13592843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7601082A Granted JPS58193726A (ja) | 1982-05-08 | 1982-05-08 | 蒸着方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58193726A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60209247A (ja) * | 1984-04-02 | 1985-10-21 | Ushio Inc | 光化学反応装置 |
JPS62227089A (ja) * | 1986-03-27 | 1987-10-06 | Anelva Corp | 表面処理方法および装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57159016A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of amorphous silicon film |
JPS58176923A (ja) * | 1982-04-09 | 1983-10-17 | Jeol Ltd | プラズマcvd装置 |
JPS59126500U (ja) * | 1983-02-15 | 1984-08-25 | 株式会社日立国際電気 | プラズマ発生装置の拡散防止装置 |
-
1982
- 1982-05-08 JP JP7601082A patent/JPS58193726A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57159016A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of amorphous silicon film |
JPS58176923A (ja) * | 1982-04-09 | 1983-10-17 | Jeol Ltd | プラズマcvd装置 |
JPS59126500U (ja) * | 1983-02-15 | 1984-08-25 | 株式会社日立国際電気 | プラズマ発生装置の拡散防止装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60209247A (ja) * | 1984-04-02 | 1985-10-21 | Ushio Inc | 光化学反応装置 |
JPS62227089A (ja) * | 1986-03-27 | 1987-10-06 | Anelva Corp | 表面処理方法および装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6150147B2 (enrdf_load_stackoverflow) | 1986-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3148004B2 (ja) | 光cvd装置及びこれを用いた半導体装置の製造方法 | |
US4525382A (en) | Photochemical vapor deposition apparatus | |
EP0175456B1 (en) | Phototreating apparatus | |
US4500565A (en) | Deposition process | |
JPS6248753B2 (enrdf_load_stackoverflow) | ||
JPS58193726A (ja) | 蒸着方法 | |
US5007374A (en) | Apparatus for forming thin films in quantity | |
EP0223787B1 (en) | Selective chemical vapor deposition method and apparatus | |
JPH0419198B2 (enrdf_load_stackoverflow) | ||
JPH11106911A (ja) | 薄膜形成装置及びそれを用いた化合物薄膜の形成法 | |
JPS6156278A (ja) | 成膜方法 | |
JPS6062125A (ja) | プラズマエツチング方法 | |
JPS6156279A (ja) | 成膜方法 | |
JPS5916966A (ja) | 化学蒸着装置 | |
JPS6156280A (ja) | 被膜形成方法 | |
JP3064407B2 (ja) | 光励起プロセス装置用光源 | |
JP2564538B2 (ja) | 半導体処理装置 | |
JPS6150152B2 (enrdf_load_stackoverflow) | ||
JPS6214225B2 (enrdf_load_stackoverflow) | ||
JPS6227575A (ja) | 成膜方法 | |
JPS6150151B2 (enrdf_load_stackoverflow) | ||
JPH0573046B2 (enrdf_load_stackoverflow) | ||
JPH04105314A (ja) | 非晶質シリコンの製造方法 | |
JPS6152232B2 (enrdf_load_stackoverflow) | ||
JPS6250553B2 (enrdf_load_stackoverflow) |