JPS6214225B2 - - Google Patents

Info

Publication number
JPS6214225B2
JPS6214225B2 JP59072957A JP7295784A JPS6214225B2 JP S6214225 B2 JPS6214225 B2 JP S6214225B2 JP 59072957 A JP59072957 A JP 59072957A JP 7295784 A JP7295784 A JP 7295784A JP S6214225 B2 JPS6214225 B2 JP S6214225B2
Authority
JP
Japan
Prior art keywords
plasma generation
gas
plasma
generation chamber
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59072957A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60218474A (ja
Inventor
Shinji Sugioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP7295784A priority Critical patent/JPS60218474A/ja
Publication of JPS60218474A publication Critical patent/JPS60218474A/ja
Publication of JPS6214225B2 publication Critical patent/JPS6214225B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP7295784A 1984-04-13 1984-04-13 成膜方法 Granted JPS60218474A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7295784A JPS60218474A (ja) 1984-04-13 1984-04-13 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7295784A JPS60218474A (ja) 1984-04-13 1984-04-13 成膜方法

Publications (2)

Publication Number Publication Date
JPS60218474A JPS60218474A (ja) 1985-11-01
JPS6214225B2 true JPS6214225B2 (enrdf_load_stackoverflow) 1987-04-01

Family

ID=13504367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7295784A Granted JPS60218474A (ja) 1984-04-13 1984-04-13 成膜方法

Country Status (1)

Country Link
JP (1) JPS60218474A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0635662B2 (ja) * 1985-09-19 1994-05-11 松下電器産業株式会社 プラズマ装置
JPH0819527B2 (ja) * 1985-09-19 1996-02-28 松下電器産業株式会社 プラズマ装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202928A (ja) * 1984-03-28 1985-10-14 Toshiba Corp 光励起反応装置

Also Published As

Publication number Publication date
JPS60218474A (ja) 1985-11-01

Similar Documents

Publication Publication Date Title
US3911318A (en) Method and apparatus for generating electromagnetic radiation
CA1317644C (en) Large area microwave plasma apparatus
EP0343355B1 (en) Method of creating a high flux of activated species for reaction with a remotely located substrate
KR0145302B1 (ko) 얇은 막의 형성방법
JPS6436769A (en) Plasma treatment device
US4365587A (en) Apparatus for forming organic polymer thin films utilizing microwave induced plasmas
HK1001069B (en) Large area microwave plasma apparatus
JPH10512391A (ja) プラズマ誘導マイクロ波エネルギーによってプラズマを発生するための装置
EP0284436B1 (en) Substrate-treating apparatus
JPH0216731A (ja) プラズマ反応装置
US4972799A (en) Microwave plasma chemical vapor deposition apparatus for mass-producing functional deposited films
US5324362A (en) Apparatus for treating substrates in a microwave-generated gas-supported plasma
EP0212924A2 (en) Plasma processing apparatus
US4913928A (en) Microwave plasma chemical vapor deposition apparatus with magnet on waveguide
US4500565A (en) Deposition process
US5399388A (en) Method of forming thin films on substrates at low temperatures
JPS6214225B2 (enrdf_load_stackoverflow)
US5112647A (en) Apparatus for the preparation of a functional deposited film by means of photochemical vapor deposition process
JPH04193953A (ja) 硬質カーボン膜の形成方法及び形成装置
JPH0586648B2 (enrdf_load_stackoverflow)
JPH02151021A (ja) プラズマ加工堆積装置
JPS6227575A (ja) 成膜方法
JPH0693454A (ja) グロー放電方法及びグロー放電装置
JPS61166975A (ja) 成膜方法
JPS6150151B2 (enrdf_load_stackoverflow)