JPS6150151B2 - - Google Patents
Info
- Publication number
- JPS6150151B2 JPS6150151B2 JP1877683A JP1877683A JPS6150151B2 JP S6150151 B2 JPS6150151 B2 JP S6150151B2 JP 1877683 A JP1877683 A JP 1877683A JP 1877683 A JP1877683 A JP 1877683A JP S6150151 B2 JPS6150151 B2 JP S6150151B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- substrate
- plasma
- discharge space
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000006552 photochemical reaction Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1877683A JPS59145779A (ja) | 1983-02-09 | 1983-02-09 | 光化学蒸着装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1877683A JPS59145779A (ja) | 1983-02-09 | 1983-02-09 | 光化学蒸着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59145779A JPS59145779A (ja) | 1984-08-21 |
| JPS6150151B2 true JPS6150151B2 (enrdf_load_stackoverflow) | 1986-11-01 |
Family
ID=11981031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1877683A Granted JPS59145779A (ja) | 1983-02-09 | 1983-02-09 | 光化学蒸着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59145779A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627333B2 (ja) * | 1984-08-25 | 1994-04-13 | 康夫 垂井 | 成膜方法 |
| JPH0752718B2 (ja) * | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
-
1983
- 1983-02-09 JP JP1877683A patent/JPS59145779A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59145779A (ja) | 1984-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6150150B2 (enrdf_load_stackoverflow) | ||
| US4532199A (en) | Method of forming amorphous silicon film | |
| US4500565A (en) | Deposition process | |
| JPS6150151B2 (enrdf_load_stackoverflow) | ||
| JPS60117711A (ja) | 薄膜形成装置 | |
| JPS60117712A (ja) | 薄膜形成方法 | |
| JPS58159842A (ja) | 感光体の製造方法 | |
| JPS6150152B2 (enrdf_load_stackoverflow) | ||
| JPS6227575A (ja) | 成膜方法 | |
| JPS6250553B2 (enrdf_load_stackoverflow) | ||
| JPS60218474A (ja) | 成膜方法 | |
| JP2890693B2 (ja) | 光反転ｃｖｄ方法 | |
| JP2629773B2 (ja) | 多層薄膜の形成方法 | |
| JPS6150147B2 (enrdf_load_stackoverflow) | ||
| JPH07105346B2 (ja) | ラジカルビ−ム光ｃｖｄ装置 | |
| JPS60212224A (ja) | 光化学反応装置 | |
| JPH02110919A (ja) | 成膜装置 | |
| JPH0644553B2 (ja) | 光気相成長方法及び光気相成長装置 | |
| JP3451674B2 (ja) | 半導体の製造方法 | |
| JPS6156278A (ja) | 成膜方法 | |
| JPS6156279A (ja) | 成膜方法 | |
| JPH0336272A (ja) | 光ｃｖｄ装置 | |
| JPS6230880A (ja) | プラズマｃｖｄ法による堆積膜形成装置 | |
| JPH04365318A (ja) | 表面処理装置 | |
| JPS6273727A (ja) | 光励起処理装置 |