JPS6150147B2 - - Google Patents

Info

Publication number
JPS6150147B2
JPS6150147B2 JP57076010A JP7601082A JPS6150147B2 JP S6150147 B2 JPS6150147 B2 JP S6150147B2 JP 57076010 A JP57076010 A JP 57076010A JP 7601082 A JP7601082 A JP 7601082A JP S6150147 B2 JPS6150147 B2 JP S6150147B2
Authority
JP
Japan
Prior art keywords
substrate
plasma
vapor deposition
deposition method
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57076010A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58193726A (ja
Inventor
Tatsumi Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP7601082A priority Critical patent/JPS58193726A/ja
Publication of JPS58193726A publication Critical patent/JPS58193726A/ja
Publication of JPS6150147B2 publication Critical patent/JPS6150147B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP7601082A 1982-05-08 1982-05-08 蒸着方法 Granted JPS58193726A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7601082A JPS58193726A (ja) 1982-05-08 1982-05-08 蒸着方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7601082A JPS58193726A (ja) 1982-05-08 1982-05-08 蒸着方法

Publications (2)

Publication Number Publication Date
JPS58193726A JPS58193726A (ja) 1983-11-11
JPS6150147B2 true JPS6150147B2 (enrdf_load_stackoverflow) 1986-11-01

Family

ID=13592843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7601082A Granted JPS58193726A (ja) 1982-05-08 1982-05-08 蒸着方法

Country Status (1)

Country Link
JP (1) JPS58193726A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209247A (ja) * 1984-04-02 1985-10-21 Ushio Inc 光化学反応装置
JPS62227089A (ja) * 1986-03-27 1987-10-06 Anelva Corp 表面処理方法および装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159016A (en) * 1981-03-26 1982-10-01 Sumitomo Electric Ind Ltd Manufacture of amorphous silicon film
JPS58176923A (ja) * 1982-04-09 1983-10-17 Jeol Ltd プラズマcvd装置
JPS59126500U (ja) * 1983-02-15 1984-08-25 株式会社日立国際電気 プラズマ発生装置の拡散防止装置

Also Published As

Publication number Publication date
JPS58193726A (ja) 1983-11-11

Similar Documents

Publication Publication Date Title
US20040129212A1 (en) Apparatus and method for delivery of reactive chemical precursors to the surface to be treated
US5229081A (en) Apparatus for semiconductor process including photo-excitation process
US4653428A (en) Selective chemical vapor deposition apparatus
TW200307314A (en) Method of and apparatus for manufacturing semiconductor device
JPS6248753B2 (enrdf_load_stackoverflow)
US4500565A (en) Deposition process
JPS6150147B2 (enrdf_load_stackoverflow)
US4910044A (en) Ultraviolet light emitting device and application thereof
WO1986006755A1 (en) Selective chemical vapor deposition method and apparatus
EP0328417B1 (en) Apparatus for semiconductor process including photo-excitation process
US4719122A (en) CVD method and apparatus for forming a film
JP2564538B2 (ja) 半導体処理装置
JP2608456B2 (ja) 薄膜形成装置
JPS6156278A (ja) 成膜方法
JPS6156279A (ja) 成膜方法
JP2629773B2 (ja) 多層薄膜の形成方法
JPS5916966A (ja) 化学蒸着装置
JPS6150152B2 (enrdf_load_stackoverflow)
JPS6156280A (ja) 被膜形成方法
JPS61216318A (ja) 光cvd装置
JPH0689455B2 (ja) 薄膜形成方法
JPH0573046B2 (enrdf_load_stackoverflow)
JPH02207525A (ja) 基板処理方法及び装置
JPH04105314A (ja) 非晶質シリコンの製造方法
JP2001015439A (ja) 半導体ウェーハの処理装置および半導体ウェーハの処理方法