JPS60218474A - 成膜方法 - Google Patents
成膜方法Info
- Publication number
- JPS60218474A JPS60218474A JP7295784A JP7295784A JPS60218474A JP S60218474 A JPS60218474 A JP S60218474A JP 7295784 A JP7295784 A JP 7295784A JP 7295784 A JP7295784 A JP 7295784A JP S60218474 A JPS60218474 A JP S60218474A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- plasma generation
- gas
- chamber
- generation chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7295784A JPS60218474A (ja) | 1984-04-13 | 1984-04-13 | 成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7295784A JPS60218474A (ja) | 1984-04-13 | 1984-04-13 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60218474A true JPS60218474A (ja) | 1985-11-01 |
JPS6214225B2 JPS6214225B2 (enrdf_load_stackoverflow) | 1987-04-01 |
Family
ID=13504367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7295784A Granted JPS60218474A (ja) | 1984-04-13 | 1984-04-13 | 成膜方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60218474A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6267179A (ja) * | 1985-09-19 | 1987-03-26 | Matsushita Electric Ind Co Ltd | プラズマ装置 |
JPS6267178A (ja) * | 1985-09-19 | 1987-03-26 | Matsushita Electric Ind Co Ltd | プラズマ装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202928A (ja) * | 1984-03-28 | 1985-10-14 | Toshiba Corp | 光励起反応装置 |
-
1984
- 1984-04-13 JP JP7295784A patent/JPS60218474A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202928A (ja) * | 1984-03-28 | 1985-10-14 | Toshiba Corp | 光励起反応装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6267179A (ja) * | 1985-09-19 | 1987-03-26 | Matsushita Electric Ind Co Ltd | プラズマ装置 |
JPS6267178A (ja) * | 1985-09-19 | 1987-03-26 | Matsushita Electric Ind Co Ltd | プラズマ装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6214225B2 (enrdf_load_stackoverflow) | 1987-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0136863B1 (ko) | 고플럭스의 활성종 제조방법 | |
US4716852A (en) | Apparatus for thin film formation using photo-induced chemical reaction | |
JPH02224236A (ja) | 集積回路デバイスを製造するための装置 | |
JPS6436769A (en) | Plasma treatment device | |
JPH05156450A (ja) | 基体をプラズマcvd被覆またはプラズマ処理するための方法及び装置 | |
US5256854A (en) | Tunable plasma method and apparatus using radio frequency heating and electron beam irradiation | |
EP0284436B1 (en) | Substrate-treating apparatus | |
EP0520832B1 (en) | Plasma assisted diamond synthesis | |
JPS60218474A (ja) | 成膜方法 | |
JPH04193953A (ja) | 硬質カーボン膜の形成方法及び形成装置 | |
JP3161788B2 (ja) | ダイヤモンド膜合成装置 | |
JPH02151021A (ja) | プラズマ加工堆積装置 | |
JPS6227575A (ja) | 成膜方法 | |
JPS61166975A (ja) | 成膜方法 | |
JPH0665744A (ja) | ダイヤモンド状炭素薄膜の製造方法 | |
JPS6150151B2 (enrdf_load_stackoverflow) | ||
JP2754274B2 (ja) | ダイヤモンド膜の製造方法及び製造装置 | |
CN119586328A (zh) | 微波等离子体发生装置、微波等离子体处理装置和微波等离子体处理方法 | |
JPH04132684A (ja) | ダイヤモンド薄膜の作成方法 | |
JP2769977B2 (ja) | プラズマ処理方法 | |
JPS6396282A (ja) | マイクロ波プラズマ発生装置 | |
JPH04338197A (ja) | ダイヤモンドの合成方法 | |
JPH01294864A (ja) | ゲルマニウム系アモルファス合金膜の形成方法 | |
JPH02159378A (ja) | プラズマcvd法による成膜装置 | |
JPS60182127A (ja) | 光励起反応装置 |