JPS58192337A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58192337A
JPS58192337A JP57075352A JP7535282A JPS58192337A JP S58192337 A JPS58192337 A JP S58192337A JP 57075352 A JP57075352 A JP 57075352A JP 7535282 A JP7535282 A JP 7535282A JP S58192337 A JPS58192337 A JP S58192337A
Authority
JP
Japan
Prior art keywords
layer
corrosion
wire
aluminum
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57075352A
Other languages
English (en)
Inventor
Keiji Miyamoto
宮本　圭二
Toru Kawanobe
川野辺　徹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57075352A priority Critical patent/JPS58192337A/ja
Publication of JPS58192337A publication Critical patent/JPS58192337A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/0518—Molybdenum [Mo] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05181—Tantalum [Ta] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05184—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体ｖｃｆｔに関し、特にアルミ配線部の耐
触性の向上を図った半導体装置に関するものである。
半導体集積回路装置で代表される半導体装置、特にその
半導体素子ペレットでは所足のパターンにて形成した回
路間の接続用更には外部接続リードへの接続用配−とし
てアルミニウム薄膜からなるアルミ配線を施している。
そして、第１図にその一部を図示するように、ペース５
上に形成したアルミＶ＃Ｉの七の殆んどの部分は酸化シ
リコン等のバッフベーン曹ン膜２にて横われているが、
外部接続用リードとしてのワイヤ３を接続する所謂電極
パッド部４ではパッジページ１ン膜２が除去されアルミ
配線１が外部に露呈された状態となっている。このため
、パッド部４にワイヤ３を接続した後では、経時変化に
よってワイヤ周囲のアルミ配線ｌが腐蝕され易く、この
腐蝕が厚さ方向に進行するとワイヤ周囲においてアルミ
配線１が断線される等、装置の信頼性が低くなるという
間鴫がある。
しｒこかつて本発明の目的は、アルミ配線の厚さ方向の
中間に腐蝕のし難い金属膜を介在させるよプ構成するこ
とにより、少なくともアルミ配線の厚さ方向の腐蝕を制
限し、これによりアルミ配線の断線を確実に防止して装
置の信頼性の向上を達成することができる半導体装置を
提、供することにある。
以下、本発明を図示の実施例により説明する。
第２図は本発明の一実施例を示し、半導体装置としてＭ
ＯＳ　）ランジスタに適用した例である。
図示の工５に、トランジスタ６はＰ型ペース７表面にｎ
　のソース８とドレイン９を形成し、その表面に酸化シ
リコン［１０を形成する。そして、この酸化シリコ’ｌ
ｌｌ１Ｏｉｃはソース８とドレイン９に対応する位置Ｋ
ｗＢ％：彫成した上でアルミ電極１１．１２を形成し、
同様にソース８．ドレイ／９間にもアルミニウムにてゲ
ート電極１３を形成する。そして、前記ソースとドレイ
／の各アルミ電極１１．１２は酸化シリコン膜ｌＯの上
面に延設してアルミ配線１４．１５を形成し各々の他端
部に電極パッド１６．１７を形成している。即ち、前記
アルミ電極１１．１２−’ｆ’アルミ配線１４．１５は
その上側に形成したパッシペー／ｗ）Ｍｌｇにて被覆さ
れるが、電極バンド１６．１７に対応するパッ７ベーシ
ヲン膜部位には窓を形成し、ここからアルミ配線１４．
１５が露呈されている。なお、ゲート電極１３に関して
も同様である。
そして、この場合第３図に一部を拡大図示するようにア
ルミ配線１５（アルミ配線１４も同様である）は厚さ方
向に３層構造としており、上下のアルミ層１９．２０の
中間に耐屑−性雀属の膜からなる中間層２１を介在させ
ている。この中間層２１は電極パッド１７に接続するワ
イヤの素材である金（Ａｕ）と接触しても腐蝕が生じ難
い材質、例えばＴｉ、Ｔａの外Ｃｒ　、Ｗ、　Ｍｏ　、
　Ｚｎ、Ｒｈ。
Ｐｔ、Ｐｄ等が使用される。これらの金属からなる中間
層２１はアルミ配線１５の蒸着時にアルミ層１９．２０
の蒸着の間に蒸着により形成する。
図中、２２は接続したワイヤである。
以上の構成によれば、電極パッド１７においてワイ−４
ｒ２２の周囲が外部に露呈し、この部位のアルミ層１９
Ｋｇｆｉが生じるようなことがあっても、この腐蝕は中
間層２１ＪＣより厚さ方向に進行されることはなく、ア
ルミ配線１５の断線は確実に防止できる。一方、中間層
２１を形成してもその下側にはアルミ層２０が存在して
ここで電気的導通が行なわれるので、電気抵抗の増加は
殆んど生じない。更に、ワイヤ２２の接続に際してもワ
イヤし ２２を上側のアルミ層１９に接続しているので、　　　
　　（ゝボンダビリティに悪影響を与えることもない。
なお、腐蝕はアルミ層１９において横方向にも進行する
が、横方向の長さは充分に長いので腐蝕は殆んど問題に
ならない。
ここで、前例ではワイヤ２２に金を使用した場合に１中
間層、特にＴｉやＴａがＡｕと電池を構成しても不動１
ＩｌｌＩｔｔ形成して耐腐蝕効果が増大されるという理
由に基づいているが、ワイヤにアルミニウムを使用した
場合にも中間層２１にて腐蝕の進行を防止するという点
において同様な効果を得ることができる。
以上のように本発明の半導体装置によれば、電極バッド
′％：ｌｌ！成するアルミ配線の厚さ方向の中間に耐腐
蝕性の金属膜を介在させているので、％にアルミ配線の
厚さ方向の腐蝕の進行を防止してアルミ配線の断線等を
防止し、これＩＣＪ：り装置の信頼性を向上するという
効果を饗する。
【図面の簡単な説明】
第１図は従来の不具合を説明するための断面図、纂２図
は本発明の一実施例の断面図、 第３図は要部の拡大図である。 ６・・・Ｍ（ＪＳ）ランジスタ、７・・・ペース、１０
・・・酸化シリコン、１１．１２・・・アルミ電極、１
４゜１５・・・アルミ配線、１６．１７・・・電極パッ
ド、１８・・・パッジベージ１ン、１９．２０・・・ア
ルミ層、２１・・・中間層、２２・・・ワイヤ。

Claims (1)

    【特許請求の範囲】
  1. １、一部に電極パッドとしてのワイヤ従続部位を有する
    アルミ配線を備えた半導体装置において、前記アルミ配
    線はその厚さ方向の上下アルミ層の間に耐腐蝕金属材か
    らなる中間層を形成したことを特徴と、する半導体装置
    。
JP57075352A 1982-05-07 1982-05-07 半導体装置 Pending JPS58192337A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57075352A JPS58192337A (ja) 1982-05-07 1982-05-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57075352A JPS58192337A (ja) 1982-05-07 1982-05-07 半導体装置

Publications (1)

Publication Number Publication Date
JPS58192337A true JPS58192337A (ja) 1983-11-09

Family

ID=13573756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075352A Pending JPS58192337A (ja) 1982-05-07 1982-05-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS58192337A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171143A (ja) * 1983-03-17 1984-09-27 New Japan Radio Co Ltd 半導体集積回路の配線構造
JPS62136838A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp 半導体装置
JPH0494752U (ja) * 1990-12-29 1992-08-17

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171143A (ja) * 1983-03-17 1984-09-27 New Japan Radio Co Ltd 半導体集積回路の配線構造
JPS62136838A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp 半導体装置
JPH0494752U (ja) * 1990-12-29 1992-08-17

Similar Documents

Publication Publication Date Title
US9391036B2 (en) Semiconductor device and manufacturing method thereof
TWI242867B (en) The fabrication method of the wafer and the structure thereof
JPH02222148A (ja) 半導体装置
TW200404344A (en) Connection terminals and manufacturing method of the same, semiconductor device and manufacturing method of the same
JP3514314B2 (ja) 半導体装置およびその製造方法
US8368211B2 (en) Solderable top metalization and passivation for source mounted package
JP2718854B2 (ja) 半導体装置
US3617818A (en) Corrosion-resistent multimetal lead contact for semiconductor devices
US4394678A (en) Elevated edge-protected bonding pedestals for semiconductor devices
JP2023174895A (ja) 半導体素子および半導体装置
JPS58192337A (ja) 半導体装置
JPS6050343B2 (ja) 半導体装置製造用リ−ドフレ−ム
JPS59188147A (ja) 半導体装置およびその製造方法
JP3077315B2 (ja) 半導体装置
JPH01318236A (ja) 半導体装置
JPH0546978B2 (ja)
JPS59139661A (ja) 半導体装置
JPS6050342B2 (ja) 半導体装置製造用リ−ドフレ−ム
JPS61170056A (ja) 半導体装置の電極材料
JPS59765Y2 (ja) 半導体装置
JPS634648A (ja) 半導体装置
JPS6079762A (ja) 電子装置
JPS6122659A (ja) 半導体装置
JP3199925B2 (ja) 半導体装置およびその製造方法
JPS5823451A (ja) 半導体装置