JPS58184765A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58184765A
JPS58184765A JP57068192A JP6819282A JPS58184765A JP S58184765 A JPS58184765 A JP S58184765A JP 57068192 A JP57068192 A JP 57068192A JP 6819282 A JP6819282 A JP 6819282A JP S58184765 A JPS58184765 A JP S58184765A
Authority
JP
Japan
Prior art keywords
film
type semiconductor
gate
oxide film
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57068192A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05851B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
伸夫 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57068192A priority Critical patent/JPS58184765A/ja
Publication of JPS58184765A publication Critical patent/JPS58184765A/ja
Publication of JPH05851B2 publication Critical patent/JPH05851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57068192A 1982-04-23 1982-04-23 半導体装置の製造方法 Granted JPS58184765A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57068192A JPS58184765A (ja) 1982-04-23 1982-04-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57068192A JPS58184765A (ja) 1982-04-23 1982-04-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58184765A true JPS58184765A (ja) 1983-10-28
JPH05851B2 JPH05851B2 (enrdf_load_stackoverflow) 1993-01-06

Family

ID=13366669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57068192A Granted JPS58184765A (ja) 1982-04-23 1982-04-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58184765A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196577A (ja) * 1985-02-26 1986-08-30 Nec Corp 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547883A (en) * 1977-06-20 1979-01-20 Nec Corp Semiconductor device and its manufacture
JPS5745281A (en) * 1980-07-08 1982-03-15 Ibm Method of producing field effect transistor
JPS58130569A (ja) * 1982-01-28 1983-08-04 Toshiba Corp 半導体装置の製造方法
JPS58162064A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547883A (en) * 1977-06-20 1979-01-20 Nec Corp Semiconductor device and its manufacture
JPS5745281A (en) * 1980-07-08 1982-03-15 Ibm Method of producing field effect transistor
JPS58130569A (ja) * 1982-01-28 1983-08-04 Toshiba Corp 半導体装置の製造方法
JPS58162064A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196577A (ja) * 1985-02-26 1986-08-30 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPH05851B2 (enrdf_load_stackoverflow) 1993-01-06

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