JPH05851B2 - - Google Patents

Info

Publication number
JPH05851B2
JPH05851B2 JP57068192A JP6819282A JPH05851B2 JP H05851 B2 JPH05851 B2 JP H05851B2 JP 57068192 A JP57068192 A JP 57068192A JP 6819282 A JP6819282 A JP 6819282A JP H05851 B2 JPH05851 B2 JP H05851B2
Authority
JP
Japan
Prior art keywords
film
oxide film
gate
gate electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57068192A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58184765A (ja
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57068192A priority Critical patent/JPS58184765A/ja
Publication of JPS58184765A publication Critical patent/JPS58184765A/ja
Publication of JPH05851B2 publication Critical patent/JPH05851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP57068192A 1982-04-23 1982-04-23 半導体装置の製造方法 Granted JPS58184765A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57068192A JPS58184765A (ja) 1982-04-23 1982-04-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57068192A JPS58184765A (ja) 1982-04-23 1982-04-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58184765A JPS58184765A (ja) 1983-10-28
JPH05851B2 true JPH05851B2 (enrdf_load_stackoverflow) 1993-01-06

Family

ID=13366669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57068192A Granted JPS58184765A (ja) 1982-04-23 1982-04-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58184765A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196577A (ja) * 1985-02-26 1986-08-30 Nec Corp 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547883A (en) * 1977-06-20 1979-01-20 Nec Corp Semiconductor device and its manufacture
US4359816A (en) * 1980-07-08 1982-11-23 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits
JPS58130569A (ja) * 1982-01-28 1983-08-04 Toshiba Corp 半導体装置の製造方法
JPS58162064A (ja) * 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS58184765A (ja) 1983-10-28

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