JPS58182237A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS58182237A
JPS58182237A JP6521082A JP6521082A JPS58182237A JP S58182237 A JPS58182237 A JP S58182237A JP 6521082 A JP6521082 A JP 6521082A JP 6521082 A JP6521082 A JP 6521082A JP S58182237 A JPS58182237 A JP S58182237A
Authority
JP
Japan
Prior art keywords
pad
circuit
test
test circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6521082A
Inventor
Kazuharu Takeda
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP6521082A priority Critical patent/JPS58182237A/en
Publication of JPS58182237A publication Critical patent/JPS58182237A/en
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PURPOSE:To realize reduction in size through common use of pads for internal circuit and IC test circuit. CONSTITUTION:Terminals of test circuit 1 are connected to a pad 2 for internal circuit and a pad 3 for test circuit. An internal circuit 4 is connected to the pad 2 for signal input/output or power supply ON/OFF. At this time, the test pad 3 is opened and it does not give any influence on the test circuit 1. According to this structure, area for pad is drastically reduced and IC can be reduced in size.
JP6521082A 1982-04-19 1982-04-19 Semiconductor integrated circuit Granted JPS58182237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6521082A JPS58182237A (en) 1982-04-19 1982-04-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6521082A JPS58182237A (en) 1982-04-19 1982-04-19 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS58182237A true JPS58182237A (en) 1983-10-25

Family

ID=13280318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6521082A Granted JPS58182237A (en) 1982-04-19 1982-04-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS58182237A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466956A (en) * 1993-11-18 1995-11-14 Nec Corporation Semiconductor integrated circuit device with electrode for measuring interlayer insulator capacitance
US6037795A (en) * 1997-09-26 2000-03-14 International Business Machines Corporation Multiple device test layout
US6184569B1 (en) * 1998-01-13 2001-02-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor chip inspection structures
US7307441B2 (en) 2002-05-15 2007-12-11 Samsung Electronics Co., Ltd. Integrated circuit chips and wafers including on-chip test element group circuits, and methods of fabricating and testing same
US8890556B2 (en) 2011-10-26 2014-11-18 International Business Machines Corporation Real-time on-chip EM performance monitoring
US8917104B2 (en) 2011-08-31 2014-12-23 International Business Machines Corporation Analyzing EM performance during IC manufacturing

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466956A (en) * 1993-11-18 1995-11-14 Nec Corporation Semiconductor integrated circuit device with electrode for measuring interlayer insulator capacitance
US6037795A (en) * 1997-09-26 2000-03-14 International Business Machines Corporation Multiple device test layout
US6184569B1 (en) * 1998-01-13 2001-02-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor chip inspection structures
DE19836614C2 (en) * 1998-01-13 2003-08-21 Mitsubishi Electric Corp Semiconductor chip with line on a corner part of the semiconductor chip
US7307441B2 (en) 2002-05-15 2007-12-11 Samsung Electronics Co., Ltd. Integrated circuit chips and wafers including on-chip test element group circuits, and methods of fabricating and testing same
US8917104B2 (en) 2011-08-31 2014-12-23 International Business Machines Corporation Analyzing EM performance during IC manufacturing
US8890556B2 (en) 2011-10-26 2014-11-18 International Business Machines Corporation Real-time on-chip EM performance monitoring

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