JPH01210874A - Inspecting method for semiconductor device - Google Patents

Inspecting method for semiconductor device

Info

Publication number
JPH01210874A
JPH01210874A JP3576688A JP3576688A JPH01210874A JP H01210874 A JPH01210874 A JP H01210874A JP 3576688 A JP3576688 A JP 3576688A JP 3576688 A JP3576688 A JP 3576688A JP H01210874 A JPH01210874 A JP H01210874A
Authority
JP
Japan
Prior art keywords
lead
semiconductor device
current source
voltmeter
line resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3576688A
Other languages
Japanese (ja)
Inventor
Naoki Watanabe
直樹 渡邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP3576688A priority Critical patent/JPH01210874A/en
Publication of JPH01210874A publication Critical patent/JPH01210874A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To eliminate a measurement error caused by a line resistance and to inspect a pure saturation voltage of a semiconductor device with high accuracy by connecting the title device to a measuring voltmeter through a jumper wire from a measuring lead. CONSTITUTION:To a semiconductor device 1, a lead 2 for inputting and outputting an electric signal to and from the outside, an applied current source 5, a line resistance 3 extending from the current source 5 to the lead 2, and a jumper wire 6 from the lead 2 are coupled, and a voltmeter 4 is connected thereto. In such a way, since the voltmeter 4 is connected directly to the lead 2 through the jumper wire 6, the line resistance 3 extending from the current source to the lead 2 can be disregarded, and a pure saturation voltage of the device 1 can be measured with high accuracy.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置の検査方法に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a method for testing semiconductor devices.

従来の技術 近年、半導体装置の高集積化に伴い、高精度での検査方
法の確立が必要となってきている。
2. Description of the Related Art In recent years, as semiconductor devices have become more highly integrated, it has become necessary to establish highly accurate testing methods.

以下に従来の半導体装置の飽和電圧測定について第2図
に示した接続図を参照して説明する。
The conventional saturation voltage measurement of a semiconductor device will be explained below with reference to the connection diagram shown in FIG.

この接続図は半導体装置1から電気信号を入出力するリ
ード2、印加電流源5、ライン抵抗3、電圧計4で接続
されたものである。
In this connection diagram, a semiconductor device 1 is connected by a lead 2 for inputting and outputting electrical signals, an applied current source 5, a line resistor 3, and a voltmeter 4.

発明が解決しようとする課題 しかしながら上記の従来の構成では、ライン抵抗3の影
響により、測定電圧値とリード間の電圧値には大きな違
いがあるという問題点を有していた。
Problems to be Solved by the Invention However, the conventional configuration described above has a problem in that there is a large difference between the measured voltage value and the voltage value between the leads due to the influence of the line resistance 3.

本発明は上記従来の問題点を解決するもので、ライン抵
抗による測定誤差を排除し、半導体装置の純粋な飽和電
圧を高精度で検査することを目的とするものである。
The present invention solves the above-mentioned conventional problems, and aims to eliminate measurement errors caused by line resistance and to test the pure saturation voltage of a semiconductor device with high precision.

課題を解決するための手段 本発明の半導体装置の検査方法は、測定リードからジャ
ンパー線を通して計測電圧計に接続する構成のものであ
る。
Means for Solving the Problems The semiconductor device testing method of the present invention has a configuration in which a measurement lead is connected to a measurement voltmeter through a jumper wire.

作用 この構成により、電流源からのライン抵抗による影響は
なくなる。
Effect: This configuration eliminates the effects of line resistance from the current source.

実施例 以下、本発明の半導体装置の検査方法の一実施例につい
て第1図に示した接続図を参照しながら説明する。
EXAMPLE Hereinafter, an example of the semiconductor device testing method of the present invention will be described with reference to the connection diagram shown in FIG.

半導体装置1に、外部との電気信号を入出力するリード
2、印加電流源5、同電流源5からり−ド2までのライ
ン抵抗3、リード2からジャンパー線6が結ばれ、そこ
に電圧計4を接続したものである。
A lead 2 for inputting and outputting electrical signals to and from the outside, an applied current source 5, a line resistor 3 from the current source 5 to the lead 2, and a jumper wire 6 from the lead 2 are connected to the semiconductor device 1, and a voltage is applied thereto. A total of 4 are connected.

発明の効果 本発明の半導体装置の検査方法によれば、電圧計をジャ
ンパーを通してリードに直接接続することにより、電流
源からリードまでのライン抵抗を全(無視することがで
き、半導体装置の純粋な飽和電圧を高精度で測定するこ
とができる。
Effects of the Invention According to the semiconductor device testing method of the present invention, by directly connecting a voltmeter to the leads through a jumper, the line resistance from the current source to the leads can be completely ignored, and the pure Saturation voltage can be measured with high accuracy.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の半導体装置の検査方法を示す接続図、
第2図は従来の半導体装置の検査方法を示す接続図であ
る。 ■・・・・・・半導体装置、2・・・・・・リード、3
・・・・・・ライン抵抗、4・・・・・・電圧計、5・
・・・・・電流計、6・・・・・・ジャンパー線。 代理人の氏名 弁理士 中尾敏男 ほか1名第1図 第2図
FIG. 1 is a connection diagram showing a method for testing a semiconductor device according to the present invention;
FIG. 2 is a connection diagram showing a conventional semiconductor device testing method. ■...Semiconductor device, 2...Lead, 3
... Line resistance, 4 ... Voltmeter, 5.
...Ammeter, 6...Jumper wire. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims]  半導体装置で、任意の端子間の電圧を測定する際に、
電流源に接続されたリードピンに対し、電圧計を直接、
前記リードピンに結合することを特徴とする半導体装置
の検査方法。
When measuring the voltage between arbitrary terminals of a semiconductor device,
Connect the voltmeter directly to the lead pin connected to the current source.
A method for inspecting a semiconductor device, the method comprising: coupling to the lead pin.
JP3576688A 1988-02-18 1988-02-18 Inspecting method for semiconductor device Pending JPH01210874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3576688A JPH01210874A (en) 1988-02-18 1988-02-18 Inspecting method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3576688A JPH01210874A (en) 1988-02-18 1988-02-18 Inspecting method for semiconductor device

Publications (1)

Publication Number Publication Date
JPH01210874A true JPH01210874A (en) 1989-08-24

Family

ID=12450985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3576688A Pending JPH01210874A (en) 1988-02-18 1988-02-18 Inspecting method for semiconductor device

Country Status (1)

Country Link
JP (1) JPH01210874A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006302546A (en) * 2005-04-18 2006-11-02 Hitachi High-Technologies Corp Combined resistor body, amplifying circuit using the same, charged particle beam device, and manufacturing method of the combined resistor body
CN102565538A (en) * 2012-02-28 2012-07-11 上海华力微电子有限公司 Method for enhancing resistance testing accuracy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006302546A (en) * 2005-04-18 2006-11-02 Hitachi High-Technologies Corp Combined resistor body, amplifying circuit using the same, charged particle beam device, and manufacturing method of the combined resistor body
CN102565538A (en) * 2012-02-28 2012-07-11 上海华力微电子有限公司 Method for enhancing resistance testing accuracy

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