JPH01210874A - Inspecting method for semiconductor device - Google Patents
Inspecting method for semiconductor deviceInfo
- Publication number
- JPH01210874A JPH01210874A JP3576688A JP3576688A JPH01210874A JP H01210874 A JPH01210874 A JP H01210874A JP 3576688 A JP3576688 A JP 3576688A JP 3576688 A JP3576688 A JP 3576688A JP H01210874 A JPH01210874 A JP H01210874A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- semiconductor device
- current source
- voltmeter
- line resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 5
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置の検査方法に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a method for testing semiconductor devices.
従来の技術
近年、半導体装置の高集積化に伴い、高精度での検査方
法の確立が必要となってきている。2. Description of the Related Art In recent years, as semiconductor devices have become more highly integrated, it has become necessary to establish highly accurate testing methods.
以下に従来の半導体装置の飽和電圧測定について第2図
に示した接続図を参照して説明する。The conventional saturation voltage measurement of a semiconductor device will be explained below with reference to the connection diagram shown in FIG.
この接続図は半導体装置1から電気信号を入出力するリ
ード2、印加電流源5、ライン抵抗3、電圧計4で接続
されたものである。In this connection diagram, a semiconductor device 1 is connected by a lead 2 for inputting and outputting electrical signals, an applied current source 5, a line resistor 3, and a voltmeter 4.
発明が解決しようとする課題
しかしながら上記の従来の構成では、ライン抵抗3の影
響により、測定電圧値とリード間の電圧値には大きな違
いがあるという問題点を有していた。Problems to be Solved by the Invention However, the conventional configuration described above has a problem in that there is a large difference between the measured voltage value and the voltage value between the leads due to the influence of the line resistance 3.
本発明は上記従来の問題点を解決するもので、ライン抵
抗による測定誤差を排除し、半導体装置の純粋な飽和電
圧を高精度で検査することを目的とするものである。The present invention solves the above-mentioned conventional problems, and aims to eliminate measurement errors caused by line resistance and to test the pure saturation voltage of a semiconductor device with high precision.
課題を解決するための手段
本発明の半導体装置の検査方法は、測定リードからジャ
ンパー線を通して計測電圧計に接続する構成のものであ
る。Means for Solving the Problems The semiconductor device testing method of the present invention has a configuration in which a measurement lead is connected to a measurement voltmeter through a jumper wire.
作用
この構成により、電流源からのライン抵抗による影響は
なくなる。Effect: This configuration eliminates the effects of line resistance from the current source.
実施例
以下、本発明の半導体装置の検査方法の一実施例につい
て第1図に示した接続図を参照しながら説明する。EXAMPLE Hereinafter, an example of the semiconductor device testing method of the present invention will be described with reference to the connection diagram shown in FIG.
半導体装置1に、外部との電気信号を入出力するリード
2、印加電流源5、同電流源5からり−ド2までのライ
ン抵抗3、リード2からジャンパー線6が結ばれ、そこ
に電圧計4を接続したものである。A lead 2 for inputting and outputting electrical signals to and from the outside, an applied current source 5, a line resistor 3 from the current source 5 to the lead 2, and a jumper wire 6 from the lead 2 are connected to the semiconductor device 1, and a voltage is applied thereto. A total of 4 are connected.
発明の効果
本発明の半導体装置の検査方法によれば、電圧計をジャ
ンパーを通してリードに直接接続することにより、電流
源からリードまでのライン抵抗を全(無視することがで
き、半導体装置の純粋な飽和電圧を高精度で測定するこ
とができる。Effects of the Invention According to the semiconductor device testing method of the present invention, by directly connecting a voltmeter to the leads through a jumper, the line resistance from the current source to the leads can be completely ignored, and the pure Saturation voltage can be measured with high accuracy.
第1図は本発明の半導体装置の検査方法を示す接続図、
第2図は従来の半導体装置の検査方法を示す接続図であ
る。
■・・・・・・半導体装置、2・・・・・・リード、3
・・・・・・ライン抵抗、4・・・・・・電圧計、5・
・・・・・電流計、6・・・・・・ジャンパー線。
代理人の氏名 弁理士 中尾敏男 ほか1名第1図
第2図FIG. 1 is a connection diagram showing a method for testing a semiconductor device according to the present invention;
FIG. 2 is a connection diagram showing a conventional semiconductor device testing method. ■...Semiconductor device, 2...Lead, 3
... Line resistance, 4 ... Voltmeter, 5.
...Ammeter, 6...Jumper wire. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 Figure 2
Claims (1)
電流源に接続されたリードピンに対し、電圧計を直接、
前記リードピンに結合することを特徴とする半導体装置
の検査方法。When measuring the voltage between arbitrary terminals of a semiconductor device,
Connect the voltmeter directly to the lead pin connected to the current source.
A method for inspecting a semiconductor device, the method comprising: coupling to the lead pin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3576688A JPH01210874A (en) | 1988-02-18 | 1988-02-18 | Inspecting method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3576688A JPH01210874A (en) | 1988-02-18 | 1988-02-18 | Inspecting method for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01210874A true JPH01210874A (en) | 1989-08-24 |
Family
ID=12450985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3576688A Pending JPH01210874A (en) | 1988-02-18 | 1988-02-18 | Inspecting method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01210874A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006302546A (en) * | 2005-04-18 | 2006-11-02 | Hitachi High-Technologies Corp | Combined resistor body, amplifying circuit using the same, charged particle beam device, and manufacturing method of the combined resistor body |
CN102565538A (en) * | 2012-02-28 | 2012-07-11 | 上海华力微电子有限公司 | Method for enhancing resistance testing accuracy |
-
1988
- 1988-02-18 JP JP3576688A patent/JPH01210874A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006302546A (en) * | 2005-04-18 | 2006-11-02 | Hitachi High-Technologies Corp | Combined resistor body, amplifying circuit using the same, charged particle beam device, and manufacturing method of the combined resistor body |
CN102565538A (en) * | 2012-02-28 | 2012-07-11 | 上海华力微电子有限公司 | Method for enhancing resistance testing accuracy |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6144371A (en) | Apparatus for testing semiconductor | |
US5272445A (en) | Resistance tester utilizing regulator circuits | |
JPH01210874A (en) | Inspecting method for semiconductor device | |
CN207751929U (en) | A kind of Hall effect tester | |
JP2580064Y2 (en) | Four-terminal measurement circuit | |
JPH01129432A (en) | Integrated circuit | |
KR100231649B1 (en) | A test board having a capacitor charging circuit and a test method using the test board | |
JPH02124469A (en) | Probe card | |
CN219935963U (en) | Voltage and current measurement channel of digital bridge and digital bridge | |
JP2002156400A (en) | Electronic equipment and method of manufacturing the same | |
JPH0222707Y2 (en) | ||
JPS6241261Y2 (en) | ||
JPH01285875A (en) | Inspection of semiconductor device | |
JPH04253351A (en) | Method for measuring contact resistance | |
JPS5942707Y2 (en) | Handling device electrode | |
JPH0541419A (en) | Estimation method of test equipment | |
JPS629276A (en) | Inspecting instrument for semiconductor integrated circuit | |
JPS60196954A (en) | Integrated circuit | |
JPH04244974A (en) | Measurement of semiconductor integrated circuit | |
JPH08105935A (en) | Semiconductor integrated circuit inspection device | |
JPS62169465A (en) | Integrated circuit device | |
JPS6124249A (en) | Master slice system semiconductor integrated circuit device | |
JPH01278033A (en) | Pad arrangement structure of semiconductor integrated circuit | |
JPH07151819A (en) | Testing apparatus for integrated circuit | |
JP2002353321A (en) | Test element group and testing method using this |