JP2006302546A - Combined resistor body, amplifying circuit using the same, charged particle beam device, and manufacturing method of the combined resistor body - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam device of which change of a gain of an operation amplifier of a control circuit is made small by reducing influence of change of environmental temperature. <P>SOLUTION: The amplifying circuit provided to a control means has a resistor body integrated by electrically connecting a first resistor of which rate of change in resistance in a prescribed range of temperature has a first hyperbolic characteristics in positive value direction, and a second resistor of which rate of change in resistance to the temperature has hyperbolic characteristics in negative value direction which is reversed to the first characteristics, and reduces amount of the shift of light axis by an operation amplification. By the above, the gain of the operation amplifier changes in accordance with the change of environmental temperature, and fluctuation of output against the input of the circuit board, on which a plurality of operation amplifier is mounted, is avoided. Further, the output against the input is turned into high precision by mounting the circuit board on the charged particle beam device. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a combination resistor, an amplifier circuit using the combination resistor, a charged particle beam device equipped with the amplifier circuit, and a method of manufacturing the combination resistor.

  In recent years, in the control circuit equipped with operational amplifiers, D / A (digital to analog) converters, resistors, etc. in charged particle beam equipment such as scanning electron microscopes (SEM), there is an ever-increasing demand for higher output to input accuracy. Has been. For example, in a lens deflection control board of a scanning electron microscope, there is a significant demand for higher accuracy of an output signal with respect to an input signal. In order to realize this high-accuracy output, more accurate elements such as resistors and operational amplifiers are selected, and circuit boards are designed using these elements. In the transistor, a technique is known in which an additional transistor is provided in a stage subsequent to the former transistor in order to eliminate a junction capacitance error, thereby improving the accuracy of the output of the substrate. As for the resistance, it is known to combine a plurality of resistances having different temperature characteristics in order to obtain a desired resistance temperature characteristic (see, for example, Patent Document 1). A technique related to resistance packaging in consideration of temperature dependence of resistance is also known (see, for example, Patent Documents 2 and 3).

Japanese Patent No. 3442092 JP-A-9-260588 JP-A-9-283706

  In the case of an operational amplifier, there is a problem that the gain of the operational amplifier changes due to a change in ambient temperature depending on the temperature characteristics of the resistor used, and as a result, the output of the circuit board fluctuates. Therefore, by selecting a resistor with a small rate of change in resistance value with respect to the ambient temperature, the gain of the amplifier circuit of the operational amplifier is stabilized, but the temperature characteristics of many resistors are measured, and from among them, Since a resistor having a small rate of change in resistance value with respect to the ambient temperature is selected, a resistor having a low desired temperature characteristic cannot always be selected, and stabilization of the gain of the amplifier circuit of the operational amplifier cannot always be realized.

  It is an object of the present invention to provide a charged particle beam apparatus in which the influence of an ambient temperature change is reduced and the gain of an operational amplifier of a control circuit is small.

The present invention includes charged particle beam irradiation means for irradiating a sample surface with a charged particle beam, a sample stage for placing the sample, a moving means for moving the sample stage, and a deflection means for deflecting the charged particle beam. A charging means comprising an amplifier circuit, a control means for controlling the deflection means, and a secondary signal detection means for detecting a secondary signal generated from the sample by irradiating the sample with the charged particle beam. In particle beam equipment,
The amplifier circuit provided in the control means includes a first resistor whose resistance value change with respect to the ambient temperature has a first characteristic, and a second resistor whose resistance value change with respect to the ambient temperature is opposite to the first characteristic. Provided is a charged particle beam device which has an integrated resistor that is electrically connected to a resistor and performs operational amplifier amplification to reduce the amount of optical axis deviation.

  According to the present invention, it is possible to suppress a change in the gain of the operational amplifier due to a change in ambient temperature, to prevent the output with respect to the input of the amplifier circuit provided with the operational amplifier from wobbling, and to increase the accuracy of the output with respect to the input. A wire device can be provided.

A charged particle beam apparatus according to an embodiment of the present invention includes a charged particle beam irradiation unit that irradiates a sample surface with a charged particle beam, a sample stage on which the sample is placed, a moving unit that moves the sample stage, A deflecting unit that deflects a charged particle beam, an amplifier circuit, a control unit that controls the deflecting unit, and a second signal that detects a secondary signal generated from the sample by irradiating the sample with the charged particle beam. A next signal detection means,
The amplifier circuit provided in the control means includes a first resistor having a hyperbolic characteristic in which a resistance value change rate with respect to temperature has a first positive value direction in a predetermined temperature range, and a resistance value change rate with respect to temperature having a first characteristic. And a second resistor having a hyperbola characteristic in the negative value direction opposite to that of the first resistor, and a resistor integrated with the second resistor, and performing operational amplifier amplification to reduce the amount of optical axis deviation.

  The resistor is composed of a combination of a resistor having a positive value characteristic with a change in resistance value with respect to an ambient temperature and a resistor having a negative value less than or equal to zero.

The amplifier circuit forms a digital-analog converter circuit together with a D / A converter and an operational amplifier, and is formed on a substrate.
The lead wires provided on the two resistors are connected by jumper wires.
Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a schematic configuration of a charged particle beam apparatus 100 to which the present invention is applied.
The charged particle beam apparatus 100 deflects the charged particle beam by charged particle beam irradiation means for irradiating a sample surface with a charged particle beam, a sample stage for placing the sample, a moving means for moving the sample stage, and the charged particle beam. A deflecting unit, a control unit that includes an amplifier circuit, and controls the deflecting unit; and a secondary signal detecting unit that detects a secondary signal generated from the sample by irradiating the sample with the charged particle beam. Prepare. Details will be described below.

  In this embodiment, electrons are used as charged particles, and a container for keeping the electron path in a vacuum is not shown in the figure. In FIG. 1, a voltage is applied between the cathode 3 and the first anode 4 by a high voltage control power source 19 controlled by the CPU 21, and a predetermined emission current is drawn from the cathode 3. Since an acceleration voltage is applied between the cathode 3 and the second anode 5 by a high voltage control power source 19 controlled by the CPU 21, the primary electron beam 6 emitted from the cathode 3 is accelerated and proceeds to the lens system at the subsequent stage. To do. The primary electron beam 6 is focused by the focusing lens 7 controlled by the focusing lens control power source 22, and unnecessary areas are removed by the aperture holes provided in the aperture plate 8. Here, the actuator 18 is provided to drive the diaphragm plate 8. Thereafter, the primary electron beam 6 is focused as a minute spot on the sample 10 by the objective lens 9 controlled by the objective lens control power supply 16 and is scanned two-dimensionally on the sample by the deflection coil 11. The scanning signal of the deflection coil 11 is controlled by the deflection coil 11 according to the observation magnification. A detector 12 for detecting secondary electrons 14 is arranged on the electron source side of the objective lens 9. The signal detected by the detector 12 is amplified by the amplifier 13, processed by the CPU 21 in synchronization with the scanning of the primary electron beam 6, and displayed on the image display device 20 as a sample image.

  The optical axis deviation in the X and Y axis directions on the sample shown in FIG. 1 will be described with reference to FIG. When the ambient temperature changes, the gain of each operational amplifier 1 on the substrate in the deflection coil control circuit 17 is affected, and the output of the operational amplifier 1 fluctuates. The fluctuation of the operational amplifier 1 is, for example, a gain drift due to a resistance value drift from a wind fluctuation with respect to a feedback resistance which is a local input resistance.

  Since the output current from the output terminal of the operational amplifier 1 on the substrate passes through the deflection coil 11, the output of the operational amplifier affects the primary electron beam 6 radiated from the cathode 3 as a fluctuation error of the magnetic field of the deflection coil 11. As a result, an error of the optical axis deviation amounts ΔX and ΔY of the spot B with respect to the spot A of the primary electron beam 6 results. Therefore, in this embodiment, in order to reduce the optical axis deviation amounts ΔX and ΔY, for example, as shown in FIG. 5B described later, the resistance value change with respect to the ambient temperature has the first characteristic in the deflection coil control circuit 17. A first resistor having a resistor and a second resistor having a resistance value change with respect to the ambient temperature that is opposite to the first property. An amplifier circuit for performing operational amplifier amplification was formed and installed on the substrate.

  In this embodiment, the case of the deflection coil control circuit 17 is described as a representative example. However, the operational amplifier is not limited to the deflection coil control circuit 17, but the high voltage control power source 19, the focusing lens control power source 22, and the detection shown in FIG. It is also used for the amplifier 13 of the signal detected by the device 12 and the objective lens control power supply 16, and the application method, configuration, and effect are substantially the same, and therefore will be omitted. In addition, the substrates used in these are hereinafter collectively referred to as lens substrates.

  A configuration for reducing the optical axis deviation amounts ΔX and ΔY will be described with reference to FIGS. 2, 3, 4, and 5. 4 and 5 are control circuit diagrams showing circuit configurations. FIG. 3A shows an example in which the output of the lens substrate of the scanning electron microscope is made highly accurate. Increasing the accuracy of the output of the lens substrate has the effect of stabilizing the current flowing in the deflection coil 11 and reducing the optical axis deviation amounts ΔX and ΔY. The input signal inputted to the input terminal 23 is constituted by a multi-stage digital-analog converter including a D / A converter 24, a variable resistor 25, an operational amplifier 1 and a resistor 2, and is soldered to the substrate 26. The substrate 26 is fixed to a fixed base 27 with a plurality of screws 28 and bushes 29. The output from the input signal input to the substrate 26 is output to the output terminal 31. Furthermore, the substrate 26 is provided with at least one cooling fan 30 in order to make the ambient temperature uniform and reduce the influence of the resistor 2 from the ambient temperature.

  FIG. 3B shows that the variable resistor 25 has a rate of change of the resistance value with respect to the ambient temperature several hundred times that of the resistor 2 in FIG. A digital trimmer 32 is provided. At this time, the CPU (1) 33 was provided outside the substrate 26 in order to perform the initial setting of the digital trimmer 32.

  Instead of the digital trimmer 32, as shown in FIG. 5B, which will be described later, a first resistance whose resistance value change with respect to the ambient temperature has a first characteristic, and a resistance value change with respect to the ambient temperature which is a first characteristic. The temperature compensation can be more easily performed by installing an integrated resistor that is electrically connected to a second resistor having the opposite characteristics.

  FIG. 4 shows an example in which the control circuit of the lens circuit of the scanning electron microscope is integrated. In FIG. 45, a multi-stage digital-analog converter circuit comprising a D / A converter 24, an operational amplifier 1 and a resistor 2 on a silicon wafer 34, and a resistor 2 around the operational amplifier 1 are changed to new resistors in consideration of the temperature coefficient. Packaging is performed by the on-chip technology. A plurality of D / A converters 24 and a variable resistor 25 for adjusting the output of the operational amplifier 1 are provided outside the silicon wafer 34. Here, the non-contact IC chip 35 stores the temperature coefficient of each combination resistor, and can automatically check the temperature coefficient.

FIG. 5 is a circuit diagram showing an example of an inverting amplifier circuit of an operational amplifier.
FIG. 5A shows a conventional example. In FIG. 5A, a resistor 2 is connected to the operational amplifier 1 in order to realize the inverting amplification function of the operational amplifier 1. In FIG. 5A, when Vin is an input voltage and Vout is an output voltage, Vout is calculated as follows.

Vout = − (R2 / R1) * Vin (Equation 1)
Here, R1 is the resistance value of the first resistor, and R2 is the resistance value of the second resistor. FIG. 5B shows this embodiment in which the output voltage Vout is made more accurate than the circuit shown in FIG. In FIG. 5B, R2 ′ and R2 ″ in FIG. 5B are resistance values newly provided to make the output voltage Vout highly accurate with respect to R2 in FIG. 5A. The output voltage at this time is obtained as follows.

Vout = − ((R2 ′ + R2 ″) / R1) * Vin Expression 2
In FIG. 5C, resistances R1 ′ and R1 ″ are connected in series instead of the resistance value R1 so that the input voltage Vin is highly accurate. 5D is a combination of FIGS. 5B and 5C, and R1 ′ and R1 ″ with respect to the resistance value R1 in FIG. 5A, and R2 ′ with respect to the resistance value R2. And R2 ″, both the input voltage Vin and the output voltage Vout are made highly accurate.

  FIG. 6 is a characteristic diagram showing an example of each resistance temperature curve. The horizontal axis represents the resistance ambient temperature, and the vertical axis represents the resistance change rate ΔR / R (ppm). Each resistance increases or decreases around an ambient temperature of 25 ° C., but the characteristics are selected from those of linear objects, and R2 = R2 ′ + R2 ″ with respect to the above-mentioned formulas 1 and 2. For a resistor that satisfies the condition, for example, R2 = 10 kilohms, by selecting a resistance value of R2 ′ = 5 kilohms and R2 ″ = 5 kilohms, the overall resistance value change rate ΔR / R = 0 (zero) In other words, the rate of change of the resistance value is canceled mutually, and the resistance value apparently has no influence of the ambient temperature, and a resistor having no temperature dependency can be obtained. However, this is a theoretical value, and since the number of resistors that can be selected is actually limited, the change rate ΔR / R of the resistance value is not completely zero, and some error occurs. Therefore, it is important to select a resistance value whose rate of change is as close to zero as possible. In the embodiment shown in FIG. 5 and FIG. 6, the combination of two resistors is illustrated, but the number is not limited, and the accuracy of the output voltage may be improved by combining three or more resistors. .

  Here, when R1 and R2 are the same value and the same type of resistor is used in Equation 1, and R1 and R2 ′ + R2 ″ are the same value and the same type of resistor is used in Equation 2, Equations 1 and 2 are the same. Although considered as an output, focusing on the gain of the operational amplifier 1, the change rate ΔR1, ΔR2 of the resistance value of R1, R2 with respect to the ambient temperature is larger in Formula 1 than in Formula 2, so the electrons in the passive element From the viewpoint of the flow, the number 2 is superior. In the above-described embodiment, two resistors are used in place of one resistor before achieving high accuracy. However, even when three or more resistors are combined, the value of Vout in Formula 2 is highly accurate. Can be. Further, the resistor composed of R2 ′ and R2 ″ can be easily handled by packaging in advance before soldering to the operational amplifier 1.

  In this embodiment, the change in the ambient temperature affects the resistor 2 for the operational amplifier gain, and the resistor 2 around the operational amplifier 1 is changed to a new resistor. However, the substrate is surrounded by a container so as not to change the ambient temperature. A method for measuring with high resolution by controlling the temperature in the container will be described below.

  7 and 8 are a schematic plan view and a temperature characteristic diagram of a measurement chamber for measuring a temperature characteristic of a resistance mounted on a lens substrate used in an electron microscope. In FIG. 7A, the substrate 26 is surrounded by a container 36, a room temperature sensor 37 for managing the temperature in the container 36 with high accuracy, and an air conditioner 38 that can take in the signal of the room temperature sensor 37 are installed. FIG. 7B shows the temperature characteristics of the resistance of the substrate 26 measured in this way while controlling the temperature in the container 36. The temperature change rate of the resistor shown in the figure shows the case of one resistor as shown in FIG. 5A, and the rate of change of the resistance connected to the operational amplifier on the substrate 26 is around 25 ° C. In the temperature range from T1 to T2, it is almost zero. Therefore, if the temperature of the substrate 26 can be managed between T1 and T2, the output can be stabilized with one resistor. However, in reality, there is a margin in the temperature management range, so FIGS. 5 (b) to 5 (d). It is preferable to use a resistor having a combination of at least two resistors as shown. Thus, by controlling the ambient temperature of the substrate 26 between the temperatures T1 and T2, the gain of the operational amplifier is stabilized, the output from the substrate composed of the operational amplifier 2 is stabilized, and the current flowing through the deflection coil 11 and the like is reduced. It is stable and can improve the deflection accuracy of the charged particle beam of the electron microscope. Measure the resistance characteristics in the container 36 as described above, create a database, create a plurality of resistance combination tables, and at least two resistances such that the resistance value after integration is constant with respect to ambient temperature The combination of is calculated.

  In FIG. 8A, the electron microscope is installed in a measurement chamber 39 (not shown), and a room temperature sensor 37 for managing the room temperature and an air conditioner 38 for taking in the signal of the room temperature sensor 37 are installed. When measuring the resolution of a sample with an electron microscope, the set temperature of the air conditioner 38 is set from the CPU 21 of the electron microscope shown in FIG.

  FIG. 8B is an example of the rate of change of the resistance value with respect to the temperature of the resistor 2 used for amplification of the operational amplifier 1 used in the scanning electron microscope. The air conditioner 38 is adjusted while measuring the room temperature with the room temperature sensor 37 between the predetermined temperatures T1 and T2, and the change rate of the resistance value is measured. For the same reason as in the case of FIG. 7, the operational amplifier 1 has a small change rate in resistance value between temperatures T1 and T2, so that the output from each substrate is stabilized, and the resolution is improved by the effect of stabilizing the current of the deflection coil 11, for example Can be made. It should be noted that a plurality of resistors 2 for the gain of the operational amplifier 1 have different characteristics of the rate of change of the resistance value with respect to the ambient temperature in advance, and therefore the values of T1 to T2 in which the substrate output is statistically optimized in advance by creating a database. May be determined by CUP21.

FIG. 9 is a configuration diagram of resistors, and shows an example of a structure in which two resistors are integrated in a plan view and a front view. A commercially available resistor 2a having a resistance value R2 ″ and a commercially available resistor 2b having a resistance value R2 ″ are joined via a joining agent. At this time, a bonding agent is provided on the side opposite to the side on which the resistance terminal is provided, and a space is provided between the two resistances with a predetermined interval. When the entire joint surfaces of the two resistors are joined, the resistors are facing each other in the case of a single resistor, and this causes a local temperature rise in that portion and the resistance value changes. In order to prevent this temperature rise, a space is formed at regular intervals to dissipate heat. For example, the thickness t of the bonding agent may be reduced in order to increase the heat radiation area, and the bonding portion may be widened in the plan view in order to provide bonding strength. A jig (not shown) for fixing the resistor 2a and the resistor 2b is prepared and fixed in advance, and the adhesive 40 is discharged from the front surface between both resistors, and the thickness viewed from the front surface is defined as t.
As an example of the adhesive, a good result can be obtained by using an adhesive for fixing jumper wires on a printed circuit board. Also, the terminals between both resistors are connected and fixed by soldering. A name plate 41 on which the resistance value is described is provided on the surface of the resistor.

  FIG. 10 is a characteristic diagram showing an example of the rate of change of the resistance value with respect to temperature. Usually, the resistance value is measured at three points of a reference temperature of 25 ° C., a lower temperature −T3, and an upper temperature T4, and a graph of characteristics is created by connecting the three points with a hyperbola. For example, when four types of resistance values R2 ′, R2 ″, R2′1, R2 ″ 1 are found, the combination of R2 ′ and R2 ″ is selected from the above combination table, or By selecting a combination of R2′1 and R2 ″ 1 as an integrated resistor, even if the individual resistors have different characteristics, the resistance having the same characteristics can be obtained. By connecting the resistor integrated in this way to the operational amplifier and using it for the lens substrate of the electron microscope, highly accurate control can be performed.

  FIG. 11 is a characteristic diagram showing an example of the rate of change of the resistance value with respect to temperature. Since the electron microscope is usually used in a room whose temperature is controlled, it is sufficient to obtain the characteristics of the resistor within a limited temperature range. For example, in FIG. 11, if the temperature T5 to T6 in the range of the temperature −T3 to T4 shown in FIG. 10 is the environmental temperature in which the electron microscope is used, the temperature characteristic of the resistance is the temperature T5 to T6. It suffices if predetermined characteristics are obtained within the above range. By connecting the resistor integrated in this way to the operational amplifier and using it for the lens substrate of the electron microscope, highly accurate control can be performed. The inventors obtained a resistor having a resistance value of 20 kiloohms at 0.6 W, -T3 of -55 ° C., and T4 of 125 ° C., and the rate of change of the resistance value with respect to temperature is 0.04 ppm / ° C. or less. I was able to.

  FIG. 12 is a block diagram showing an example of the structure when the resistors are integrated. FIG. 12 shows a plan view, a front view, and a side view when there is no jumper wire, and FIG. In some cases, resistors are connected in a circuit, and a jumper wire is provided for this purpose. In the present embodiment, the two resistors are integrally molded with a resin or the like including the connecting portion, and therefore, it is used when it is not necessary to consider the temperature rise between the two resistors. In FIG. 12, the terminals of each resistor are joined together at the joint 43, and terminals 42a and 42b penetrating in the vertical direction of the mold are provided to electrically connect the joint 43 and the terminal 42b. The terminal 42a is a dummy. FIG. 13 is the same as FIG. 12, except that the terminal 42 b and the terminal 42 c are electrically connected using a jumper wire at the joint 43 and the joint 44. The resistor shown in FIG. 12 and the resistor shown in FIG. 13 have the same appearance, so that the nameplate is attached to the surface or the colors are made distinguishable in order to clarify the presence or absence of the jumper wire. .

  FIG. 14 is a characteristic diagram showing a rate of change in resistance value and a cross-sectional view showing the structure when two resistors are manufactured integrally. As shown in FIG. 6, the commercially available resistor is manufactured so that the rate of change of the resistance value becomes 0 (zero) at 25 ° C. In the electron microscope, the temperature control value is not limited to 25 ° C., and may be, for example, 23 ° C. Therefore, a resistor is manufactured so that the rate of change of the resistance value becomes 0 (zero) at 23 ° C.

  In a space strictly controlled to 23 ° C., the resistance temperature curve between T3 and T4 as shown in FIG. 13 is such that 23 ° C. is the point at which the resistance value hardly fluctuates even if the ambient temperature changes apparently. A new manufacturing process that slightly shifts the characteristic curve to the left is added.

  In order to shift the resistance characteristic to the left or right, the resistance temperature characteristic is measured in advance, and a correction circuit is added inside (or outside) the resistance package so as to obtain a desired ideal characteristic. As this correction circuit, a digital analog-digital conversion circuit composed of, for example, a temperature sensor, a switch, a resistor, and the like can be considered by diverting a general-purpose LSI design technique.

  Next, an embodiment will be described in which high accuracy can be realized even when the manufacturer has a combination of different resistors.

  FIG. 15 is a flowchart showing a procedure for manufacturing a resistor. There are various manufacturers of commercially available resistors, and the rate of change in resistance value with respect to temperature and measurement conditions are also various. Therefore, first, with respect to a plurality of resistors (step 1), measurement conditions are determined and measured. Specifically, resistance values are measured at ambient temperatures T1 ° C., 25 ° C., and T2 ° C., and a database in the form of a change rate table is created using a program created by a computer or the like (step 2). When used in an electron microscope, T1 and T2 may be replaced with operating environment temperatures T5 and T6 as described in FIG. Further, the reference temperature 25 ° C. may be replaced with 23 ° C. Next, using the programmed change rate table, the computer calculates and selects a combination of resistances having characteristics that are offset by the change rate, that is, symmetrical with respect to the zero change rate (step 3). The selected resistors are joined to produce an integral resistor (step 4).

  According to this embodiment, the gain of the operational amplifier is not changed by replacing the resistance for realizing the amplification of the operational amplifier with two or more resistances having different resistance change rate characteristics with respect to the ambient temperature. It is possible to prevent output fluctuations with respect to the input of a circuit board equipped with an operational amplifier.

Sectional drawing which shows the main structures of a charged particle beam apparatus. The figure explaining optical axis deviation. The circuit diagram which shows a circuit structure. The circuit diagram which shows a circuit structure. The circuit diagram which shows an example of the inverting amplifier circuit of an operational amplifier. The characteristic view which shows an example of a resistance temperature curve. The temperature characteristic figure of a structure at the time of using the board | substrate by this invention for a scanning electron microscope, and resistance. The temperature characteristic figure of a structure at the time of using the board | substrate by this invention for a scanning electron microscope, and resistance. The block diagram of the resistance which integrated R2 'and R2' '. The characteristic view which shows an example of the change rate of the resistance value with respect to temperature. The characteristic view which shows an example of the change rate of the resistance value with respect to temperature. The block diagram which shows an example of a structure when resistance is integrated. The block diagram which shows an example of a structure when resistance is integrated. The characteristic view which shows the change rate of resistance value in the case of manufacturing two resistors integrally, and a transverse cross section which shows a structure. The flowchart which shows an example of the process of selecting the optimal matching of resistance.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Operational amplifier, 2 ... Resistance, 23 ... Input terminal, 24 ... D / A converter, 25 ... Variable resistance, 26 ... Substrate, 27 ... Fixing base, 28 ... Screw, 29 ... Bush, 30 ... Cooling fan, 31 ... Output Terminal, 32 ... Digital trimmer, 33 ... CPU (1), 35 ... Non-contact IC chip, 36 ... Container, 37 ... Room temperature sensor, 38 ... Air conditioner, 39 ... Measurement chamber, 40 ... Adhesive, 41 ... Name plate, 42 ... Lead, 43 ... Nickel chloride plate, 44 ... Adhesive, 45 ... Ceramic, 100 ... Charged particle beam device.

Claims (15)

A charged particle beam irradiating means for irradiating the surface of the sample with a charged particle beam; a sample stage for placing the sample; a moving means for moving the sample stage; a deflecting means for deflecting the charged particle beam; and an amplification circuit. A charged particle beam apparatus comprising: control means for controlling the deflection means; and secondary signal detection means for detecting a secondary signal generated from the sample by irradiating the sample with the charged particle beam. ,
The amplifier circuit provided in the control means includes a first resistor whose resistance value change with respect to the ambient temperature has a first characteristic, and a second resistor whose resistance value change with respect to the ambient temperature is opposite to the first characteristic. A charged particle beam apparatus comprising: a resistor that is electrically connected and integrated with a resistor to perform operational amplifier amplification to reduce an optical axis shift amount.   2. The charged particle beam device according to claim 1, wherein the resistor comprises a combination of a resistance having a positive value characteristic with a change in resistance value with respect to an ambient temperature and a resistance having a negative value less than or equal to zero.   2. The charged particle beam device according to claim 1, wherein the amplifier circuit forms a digital-analog converter circuit together with a D / A converter and an operational amplifier, and is formed on a substrate.   2. The charged particle beam apparatus according to claim 1, wherein the lead wires provided in the two resistors are connected by jumper wires. A charged particle beam irradiating means for irradiating the surface of the sample with a charged particle beam; a sample stage for placing the sample; a moving means for moving the sample stage; a deflecting means for deflecting the charged particle beam; and an amplification circuit. A charged particle beam apparatus comprising: control means for controlling the deflection means; and secondary signal detection means for detecting a secondary signal generated from the sample by irradiating the sample with the charged particle beam. ,
The amplifier circuit provided in the control means includes a first resistor having a hyperbolic characteristic in which a resistance value change rate with respect to temperature has a first positive value direction in a predetermined temperature range, and a resistance value change rate with respect to temperature having a first characteristic. Charged particles characterized by performing an operational amplifier amplification that has a resistor that is electrically connected and integrated with a second resistor having a hyperbolic characteristic in the negative value direction opposite to that of Wire device.   A resistor in which a change rate of the resistance value with respect to the ambient temperature has a first characteristic and a second resistor whose change rate has a second characteristic are electrically connected and integrated. In addition, the combined resistance body is characterized in that the resistance value after integration is constant with respect to the ambient temperature.   7. The combination resistor according to claim 6, wherein the first resistor and the second resistor are joined to each other at a predetermined interval via a joining agent.   In Claim 6, While the said junction agent is provided in the opposite side to the side in which the terminal of said 1st resistance or said 2nd resistance was provided, between said 1st resistance and said 2nd resistance A combination resistor having a space between them.   The combination resistor according to claim 6, comprising a configuration in which the first resistor and the second resistor are integrated with a resin so as to include a connection portion that electrically connects the first resistor and the second resistor.   The first resistance having a change rate of the resistance value with respect to the ambient temperature has the first characteristic and the second resistor having the change characteristic having the second characteristic are electrically connected and integrated, and the integration is performed. An amplifier circuit using a combination resistor, characterized in that a combination resistor whose resistance value is constant with respect to the ambient temperature is used on both the input side, output side, or input side output side of the operational amplifier.   The first resistance having a change rate of the resistance value with respect to the ambient temperature has the first characteristic and the second resistor having the change characteristic having the second characteristic are electrically connected and integrated, and the integration is performed. A combination resistor whose resistance value is constant with respect to the ambient temperature is used on both the input side, the output side, or the input side output side of the operational amplifier, and it is configured on-chip on a semiconductor wafer together with other elements. An amplifier circuit using a combination resistor characterized by the above.   A charged particle beam apparatus comprising: a lens that converges charged particles onto a sample; a deflection coil that deflects the charged particles; and a deflection coil control circuit that controls a deflection amount of the charged particles by the deflection coil. The coil control circuit is formed by electrically connecting a first resistor having a first characteristic with a change rate of the resistance value with respect to an ambient temperature and a second resistor having a second characteristic with the second change rate. In addition, a combination resistor whose resistance value after integration is constant with respect to the ambient temperature is used on the input side, output side, or input side output side of the operational amplifier, and on-chip into the semiconductor wafer together with other elements A charged particle beam device comprising an amplifier circuit having the above configuration.   A resistance manufacturing method in which at least two of a plurality of resistors having a change rate in which a resistance value changes with respect to an ambient temperature is electrically connected and integrated, which is a predetermined reference temperature; The rate of change of the resistance value at the temperature of at least three points on the positive side and the negative side from the reference temperature is measured, and from the rate of change, at least 2 so that the resistance value after integration is constant with respect to the ambient temperature A method of manufacturing a combination resistor, wherein two resistors are combined and integrated.   14. The method of manufacturing a combined resistor according to claim 13, wherein the reference temperature is determined based on an environmental temperature at which the resistor is used. 14. The at least two resistors according to claim 13, wherein a combination table of the plurality of resistors is created based on the measured rate of change of the resistance value, and the resistance value after integration is constant with respect to the ambient temperature. A method for manufacturing a combination resistor, characterized in that a combination of the two is obtained.

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