JPS5817668A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5817668A
JPS5817668A JP56116242A JP11624281A JPS5817668A JP S5817668 A JPS5817668 A JP S5817668A JP 56116242 A JP56116242 A JP 56116242A JP 11624281 A JP11624281 A JP 11624281A JP S5817668 A JPS5817668 A JP S5817668A
Authority
JP
Japan
Prior art keywords
heat treatment
temperature
transistor
current amplification
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56116242A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0420257B2 (show.php
Inventor
Toshio Sonobe
園部　俊夫
Yukio Tsuzuki
幸夫 都築
Ryuzo Tanaka
隆三 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP56116242A priority Critical patent/JPS5817668A/ja
Publication of JPS5817668A publication Critical patent/JPS5817668A/ja
Publication of JPH0420257B2 publication Critical patent/JPH0420257B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—

Landscapes

  • Bipolar Transistors (AREA)
JP56116242A 1981-07-23 1981-07-23 半導体装置の製造方法 Granted JPS5817668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56116242A JPS5817668A (ja) 1981-07-23 1981-07-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56116242A JPS5817668A (ja) 1981-07-23 1981-07-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5817668A true JPS5817668A (ja) 1983-02-01
JPH0420257B2 JPH0420257B2 (show.php) 1992-04-02

Family

ID=14682307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56116242A Granted JPS5817668A (ja) 1981-07-23 1981-07-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5817668A (show.php)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841668A (show.php) * 1971-09-27 1973-06-18
JPS4968680A (show.php) * 1972-11-06 1974-07-03
JPS52115189A (en) * 1976-03-23 1977-09-27 Sony Corp Production of semiconductor device
JPS5512752A (en) * 1978-07-12 1980-01-29 Mitsubishi Electric Corp Semiconductor device manufacturing method
JPS5723264A (en) * 1980-06-04 1982-02-06 Siemens Ag Method of stabilizing current amplification characteristics of n-p-n silicon transistor
JPS57141958A (en) * 1981-02-27 1982-09-02 Oki Electric Ind Co Ltd Manufacture of lateral type transistor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841668A (show.php) * 1971-09-27 1973-06-18
JPS4968680A (show.php) * 1972-11-06 1974-07-03
JPS52115189A (en) * 1976-03-23 1977-09-27 Sony Corp Production of semiconductor device
JPS5512752A (en) * 1978-07-12 1980-01-29 Mitsubishi Electric Corp Semiconductor device manufacturing method
JPS5723264A (en) * 1980-06-04 1982-02-06 Siemens Ag Method of stabilizing current amplification characteristics of n-p-n silicon transistor
JPS57141958A (en) * 1981-02-27 1982-09-02 Oki Electric Ind Co Ltd Manufacture of lateral type transistor

Also Published As

Publication number Publication date
JPH0420257B2 (show.php) 1992-04-02

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