JPS58175823A - プラズマ気相成長装置の反応管 - Google Patents
プラズマ気相成長装置の反応管Info
- Publication number
- JPS58175823A JPS58175823A JP57058014A JP5801482A JPS58175823A JP S58175823 A JPS58175823 A JP S58175823A JP 57058014 A JP57058014 A JP 57058014A JP 5801482 A JP5801482 A JP 5801482A JP S58175823 A JPS58175823 A JP S58175823A
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- reaction
- lid
- tube
- outlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H10P14/24—
-
- H10P14/3408—
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- H10P14/3411—
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57058014A JPS58175823A (ja) | 1982-04-09 | 1982-04-09 | プラズマ気相成長装置の反応管 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57058014A JPS58175823A (ja) | 1982-04-09 | 1982-04-09 | プラズマ気相成長装置の反応管 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175823A true JPS58175823A (ja) | 1983-10-15 |
| JPS6357939B2 JPS6357939B2 (cg-RX-API-DMAC10.html) | 1988-11-14 |
Family
ID=13072106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57058014A Granted JPS58175823A (ja) | 1982-04-09 | 1982-04-09 | プラズマ気相成長装置の反応管 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175823A (cg-RX-API-DMAC10.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61111150U (cg-RX-API-DMAC10.html) * | 1984-08-31 | 1986-07-14 | ||
| US4991540A (en) * | 1987-06-30 | 1991-02-12 | Aixtron Gmbh | Quartz-glass reactor for MOCVD systems |
-
1982
- 1982-04-09 JP JP57058014A patent/JPS58175823A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61111150U (cg-RX-API-DMAC10.html) * | 1984-08-31 | 1986-07-14 | ||
| US4991540A (en) * | 1987-06-30 | 1991-02-12 | Aixtron Gmbh | Quartz-glass reactor for MOCVD systems |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6357939B2 (cg-RX-API-DMAC10.html) | 1988-11-14 |
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