JPS58169977A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS58169977A
JPS58169977A JP57053539A JP5353982A JPS58169977A JP S58169977 A JPS58169977 A JP S58169977A JP 57053539 A JP57053539 A JP 57053539A JP 5353982 A JP5353982 A JP 5353982A JP S58169977 A JPS58169977 A JP S58169977A
Authority
JP
Japan
Prior art keywords
layer
thin film
film transistor
silicon
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57053539A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544184B2 (enrdf_load_stackoverflow
Inventor
Masaki Fukaya
深谷　正樹
Osamu Takamatsu
修 高松
Mitsutoshi Kuno
久野　光俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP57053539A priority Critical patent/JPS58169977A/ja
Publication of JPS58169977A publication Critical patent/JPS58169977A/ja
Publication of JPH0544184B2 publication Critical patent/JPH0544184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57053539A 1982-03-30 1982-03-30 薄膜トランジスタの製造方法 Granted JPS58169977A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57053539A JPS58169977A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57053539A JPS58169977A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58169977A true JPS58169977A (ja) 1983-10-06
JPH0544184B2 JPH0544184B2 (enrdf_load_stackoverflow) 1993-07-05

Family

ID=12945605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57053539A Granted JPS58169977A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58169977A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999690A (en) * 1989-12-19 1991-03-12 Texas Instruments Incorporated Transistor
US5231296A (en) * 1989-12-19 1993-07-27 Texas Instruments Incorporated Thin film transistor structure with insulating mask
JPH06132304A (ja) * 1992-03-03 1994-05-13 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687362A (en) * 1979-12-18 1981-07-15 Toshiba Corp Manufacture of semiconductor device
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof
JPS56161656A (en) * 1980-05-16 1981-12-12 Nec Kyushu Ltd Manufacture of semiconductor device
JPS5721867A (en) * 1980-06-02 1982-02-04 Xerox Corp Planar thin film transistor array and method of producing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687362A (en) * 1979-12-18 1981-07-15 Toshiba Corp Manufacture of semiconductor device
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof
JPS56161656A (en) * 1980-05-16 1981-12-12 Nec Kyushu Ltd Manufacture of semiconductor device
JPS5721867A (en) * 1980-06-02 1982-02-04 Xerox Corp Planar thin film transistor array and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999690A (en) * 1989-12-19 1991-03-12 Texas Instruments Incorporated Transistor
US5231296A (en) * 1989-12-19 1993-07-27 Texas Instruments Incorporated Thin film transistor structure with insulating mask
JPH06132304A (ja) * 1992-03-03 1994-05-13 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Also Published As

Publication number Publication date
JPH0544184B2 (enrdf_load_stackoverflow) 1993-07-05

Similar Documents

Publication Publication Date Title
US4253888A (en) Pretreatment of photoresist masking layers resulting in higher temperature device processing
JPH0687503B2 (ja) 薄膜半導体装置
JPS62124775A (ja) 傾斜エツチングによる薄膜トランジスタの製造方法および薄膜トランジスタ
JPS58169977A (ja) 薄膜トランジスタの製造方法
JP2644743B2 (ja) 液晶表示装置の製造方法
JPH043469A (ja) 薄膜トランジスタ及びその製造方法
JPS5940571A (ja) 半導体装置
JPH05335578A (ja) 薄膜トランジスタの製造方法
JPH0136256B2 (enrdf_load_stackoverflow)
JPS622654A (ja) 半導体装置およびその製造方法
JPH0247853B2 (enrdf_load_stackoverflow)
JPH06151460A (ja) 逆スタッガ型ｔｆｔの製造方法
JPS6220711B2 (enrdf_load_stackoverflow)
JPH09237567A (ja) 冷陰極素子及びその製造方法
JPH07273342A (ja) 薄膜トランジスタの製造方法
JPH035656B2 (enrdf_load_stackoverflow)
JPS62108541A (ja) 半導体装置の製造方法
JPH06209011A (ja) 薄膜トランジスターの製造方法
JP3537198B2 (ja) 半導体装置の作製方法
JPS5856261B2 (ja) 半導体集積回路の製造方法
JPS61240656A (ja) 半導体装置の製造方法
JPS60226160A (ja) 薄膜抵抗装置の製造方法
JPS61113259A (ja) 半導体装置の製造方法
JPS63153859A (ja) 半導体素子の製造方法
JPH08153728A (ja) アルミニウム配線の加工方法