JPH0136256B2 - - Google Patents
Info
- Publication number
- JPH0136256B2 JPH0136256B2 JP55132862A JP13286280A JPH0136256B2 JP H0136256 B2 JPH0136256 B2 JP H0136256B2 JP 55132862 A JP55132862 A JP 55132862A JP 13286280 A JP13286280 A JP 13286280A JP H0136256 B2 JPH0136256 B2 JP H0136256B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- base
- injector
- layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55132862A JPS5758352A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55132862A JPS5758352A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5758352A JPS5758352A (en) | 1982-04-08 |
JPH0136256B2 true JPH0136256B2 (enrdf_load_stackoverflow) | 1989-07-31 |
Family
ID=15091268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55132862A Granted JPS5758352A (en) | 1980-09-26 | 1980-09-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5758352A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003033306A (ja) * | 2001-07-24 | 2003-02-04 | Sanyo Electric Co Ltd | 電気掃除機用床用吸込具 |
GB2468514B (en) | 2009-03-12 | 2012-07-11 | Dyson Technology Ltd | A surface-treating head |
EP2442701B1 (en) | 2009-06-17 | 2016-08-17 | Dyson Technology Limited | A tool for a surface treating appliance |
AU2010272318B2 (en) | 2009-07-16 | 2013-09-12 | Dyson Technology Limited | A surface treating head |
GB0912356D0 (en) | 2009-07-16 | 2009-08-26 | Dyson Technology Ltd | A surface treating head |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5470781A (en) * | 1977-11-16 | 1979-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
JPS5474381A (en) * | 1977-11-25 | 1979-06-14 | Nec Corp | Manufacture of injection type logic circuit |
JPS5556644A (en) * | 1978-10-20 | 1980-04-25 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
-
1980
- 1980-09-26 JP JP55132862A patent/JPS5758352A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5758352A (en) | 1982-04-08 |
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