JPS58165359A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58165359A
JPS58165359A JP57048541A JP4854182A JPS58165359A JP S58165359 A JPS58165359 A JP S58165359A JP 57048541 A JP57048541 A JP 57048541A JP 4854182 A JP4854182 A JP 4854182A JP S58165359 A JPS58165359 A JP S58165359A
Authority
JP
Japan
Prior art keywords
lead
wire
semiconductor element
paste
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57048541A
Other languages
English (en)
Other versions
JPS6364052B2 (ja
Inventor
Takeshi Yoneyama
剛 米山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57048541A priority Critical patent/JPS58165359A/ja
Publication of JPS58165359A publication Critical patent/JPS58165359A/ja
Publication of JPS6364052B2 publication Critical patent/JPS6364052B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体装置に係）、特にその半導体素子の電
極とリードとを接続する一部ディンダワイヤと、当該リ
ードとの接続部の改良に関する。
〔発明の技術的背景〕
半導体装置の組立てには、半導体素子（ペレ、ト）の電
極と外部リードとを一部ティンダヮイヤで接続するがン
ディンダ工程がある。第１図はその工種を示すものであ
る。すなわち、半・う 導体素子Ｊを銀（ムｇ）−４−スト等のマンノ）　剤に
よ＃ｊリーｒフレーム２のぺ、ドｊａＫ固着した後、と
Ｏ半導体素子１の電極とダンディングワイヤ１の一端と
を一部ディンダ接続し、しかる１１このがンディンダワ
イヤ１の他端とり−ドフレーム２のインナー啼−ド郁と
を一部ディンダ接続す為、ヒζｋ、半導体素子１０電極
部は一般にアル電ニウム（ムｔ）、呼−Ｐフレーム１は
鉄（Ｆ・）系叉は銅（Ｃ１）系の材料で構成されリード
フレーム１の一部ディンダ郁には通常会めっきが施され
ている。ｉえ、Ｉンディンダワイヤ１としてはφ藁３・
趣寝度の金又はアル建具つムＯ細線が用いられている。
ｔｋお、−ンディンダ方法としては熱圧着法又は超音波
法が一般に用いられる。
このように半導体素子１がダンディング接続されたり−
Ｐ７レーム２はその後峰−ルｙ４ｘｎＫ入れられ、第雪
１１に示すようｋ例えば工Ｉキシ樹脂４でトランスファ
ー毫−ルドされた稜、個別に切断分離され為ようＫｅう
ている。
〔背景技術の問題点〕
とζろで、上記−ンディング彼のがンディングワイヤ１
の接合強度には引張〉強度等に基準値が定められている
。これは、後工程において、例えばリードフレーム２を
移動させる際に衝撃、振動が生じることにより、あるい
はモールド工程の熱処理時に工４キシ樹脂４とリードフ
レーム２との間の熱膨張係数が異なるために、−ンディ
ングワイヤ１が剥離されることがある丸め、これを防止
するものであゐ、−ンディンダワイヤ３の接合部のうち
、第１がンディング儒す表わち半導体素子１との接続部
は所望の引張）強度（１５〜２０１）が得られゐため問
題はない。
しかしながら、第２ゴンデイング側すなわちＩンディン
グワイヤＪとリードフレーム２との接続部においては、
リードフレーム２の材質、□ 表面の酸化状態によって一合条件が悪くな〕、弓、１張
強度が低下する（４〜５ｇ）、このように引張強度が低
下すると、後工程において設備中部品の管理が僚船にな
る。
〔発明のＩ的〕
この発明は上記奥悄に艦みてなされたもので、その目的
は、導電性ワイヤとリードとの接合部における強膨が向
上しえ亭導体装雪を提供することｋある。
〔発明の概要〕
この発明は、−ｙディンダワイヤとリードとの接合部を
銀ペースシで被覆し固着させるものである。
〔発明の実施例〕
以下、図面を参照してこの発ＷＰ〇一実施例を説明する
。第ＳＥ＃ｉ＃ンディンダエ賽の終了した状態を示すも
ので、リードフレームＯべ、ド１１上には銀、ペーｘ　
）　Ｊ　ｘＫよ〉半導体素子１□１ １１がマウント固着されている。銀（−スト１ｊとして
は□、例えばＩＩ’Ｏ−’ｒｌＫ社＠１）商品名□。
Ｈ−３１、Ｈ＝、３１Ｄ、ｌｌ−３１，Ｈ−１１Ｄなど
が用いられゐ、そして、半導体素子ＩＪの電１＃には例
えば金でなるがンディングワイヤ１４の一端が接着され
、このＩンデ４ンダワイヤ１４の他端はリード１５の表
面に接着されている。しかして、この−ンディンダワイ
ヤ１４とリード１５との接続部は、上記半導体素子１３
のマウントに用いられた銀ペースト１２と同じ材料の銀
ペーストＩＣによ）被覆されておシ、これによ〕強固に
固着されている。
上記銀ペースト１６は１５０℃のｉｉ＆で３０分〜３時
間の熱処理を施すことによ）硬化されゐものである。
仁のよう表構造にありては、がンディングワイヤ１４と
リード１５との接続部はがンディンと同郷ＣＩＳ〜２０
ｇ）に首で向上する。従って、その彼の工程において、
振動、衝撃が生じても一ンディンダワイヤ１４が剥れる
心配は表く、設備や部品の管理が簡単になる。また、リ
ード１５の材質や表面状態にかかわらず所望の強度が得
られるものである。さらに、上記実施例のように半導体
素子１３のマウント樹脂として銀ペースト１２を使用す
ると、同じ材料でがンディνダワイヤ１４ｔ）接合強度
を向上させることができる。
〔発明の効果〕
以上のようｋこの発明によれば、導電性ワイヤと１７−
　Ｐとの接合強度が向上した半導体装置を提供できる。
【図面の簡単な説明】
第１図は従来の−ｙディンダニ稚を示す平面図、第２図
は同じくモールド工程を示す平面図第３図はこの発明の
一笑施例に係る一ンディンダエ糧を示す断ｍ１ｉｉｏで
ある。 １１・・・ベッド、ＩＪ−半導体素子、Ｊ４−＃ンダイ
ンダワイヤ、１５−・リード、Ｊ　Ｉｆ　−・・銀ペー
スト。

Claims (1)

    【特許請求の範囲】
  1. 半導体素子の電極とリードとが導電性ワイヤで接続され
    た半導体装置において、前記リードと前記導電性ワイヤ
    との接合部を銀ペーストで被覆し固着したことを特徴と
    する半導体装置。
JP57048541A 1982-03-26 1982-03-26 半導体装置 Granted JPS58165359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57048541A JPS58165359A (ja) 1982-03-26 1982-03-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57048541A JPS58165359A (ja) 1982-03-26 1982-03-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS58165359A true JPS58165359A (ja) 1983-09-30
JPS6364052B2 JPS6364052B2 (ja) 1988-12-09

Family

ID=12806223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57048541A Granted JPS58165359A (ja) 1982-03-26 1982-03-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS58165359A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1717484A2 (en) 2005-04-25 2006-11-02 American Axle & Manufacturing, Inc. "Zero" lash sperical differential assembly using spring washers
JP5299575B1 (ja) * 2011-11-04 2013-09-25 トヨタ自動車株式会社 車両用デファレンシャル装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1717484A2 (en) 2005-04-25 2006-11-02 American Axle & Manufacturing, Inc. "Zero" lash sperical differential assembly using spring washers
JP5299575B1 (ja) * 2011-11-04 2013-09-25 トヨタ自動車株式会社 車両用デファレンシャル装置

Also Published As

Publication number Publication date
JPS6364052B2 (ja) 1988-12-09

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