JPS58164282A - 半導体レ−ザ装置の製造方法 - Google Patents
半導体レ−ザ装置の製造方法Info
- Publication number
- JPS58164282A JPS58164282A JP4560982A JP4560982A JPS58164282A JP S58164282 A JPS58164282 A JP S58164282A JP 4560982 A JP4560982 A JP 4560982A JP 4560982 A JP4560982 A JP 4560982A JP S58164282 A JPS58164282 A JP S58164282A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- light
- carrier confinement
- striped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560982A JPS58164282A (ja) | 1982-03-24 | 1982-03-24 | 半導体レ−ザ装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4560982A JPS58164282A (ja) | 1982-03-24 | 1982-03-24 | 半導体レ−ザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58164282A true JPS58164282A (ja) | 1983-09-29 |
| JPS6258679B2 JPS6258679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-12-07 |
Family
ID=12724102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4560982A Granted JPS58164282A (ja) | 1982-03-24 | 1982-03-24 | 半導体レ−ザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58164282A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0735074U (ja) * | 1993-12-14 | 1995-06-27 | 株式会社スガタ | ポストカードホルダー |
| AU707822B2 (en) * | 1995-07-13 | 1999-07-22 | Koninklijke Philips Electronics N.V. | Method and system for data repetition between logically successive clusters |
-
1982
- 1982-03-24 JP JP4560982A patent/JPS58164282A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258679B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-12-07 |