JPS58164239A - 誘電体分離基板及びその製造方法 - Google Patents

誘電体分離基板及びその製造方法

Info

Publication number
JPS58164239A
JPS58164239A JP57046900A JP4690082A JPS58164239A JP S58164239 A JPS58164239 A JP S58164239A JP 57046900 A JP57046900 A JP 57046900A JP 4690082 A JP4690082 A JP 4690082A JP S58164239 A JPS58164239 A JP S58164239A
Authority
JP
Japan
Prior art keywords
conductivity type
single crystal
region
main surface
crystal island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57046900A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0421343B2 (enExample
Inventor
Tatsuo Negoro
根来　達雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57046900A priority Critical patent/JPS58164239A/ja
Publication of JPS58164239A publication Critical patent/JPS58164239A/ja
Publication of JPH0421343B2 publication Critical patent/JPH0421343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/019—
    • H10W10/10—

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP57046900A 1982-03-24 1982-03-24 誘電体分離基板及びその製造方法 Granted JPS58164239A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57046900A JPS58164239A (ja) 1982-03-24 1982-03-24 誘電体分離基板及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57046900A JPS58164239A (ja) 1982-03-24 1982-03-24 誘電体分離基板及びその製造方法

Publications (2)

Publication Number Publication Date
JPS58164239A true JPS58164239A (ja) 1983-09-29
JPH0421343B2 JPH0421343B2 (enExample) 1992-04-09

Family

ID=12760235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57046900A Granted JPS58164239A (ja) 1982-03-24 1982-03-24 誘電体分離基板及びその製造方法

Country Status (1)

Country Link
JP (1) JPS58164239A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62166540A (ja) * 1986-01-20 1987-07-23 Nec Corp 誘電体分離型半導体装置及びその製造方法
JPH02112096A (ja) * 1988-10-21 1990-04-24 Matsushita Electric Works Ltd Ｉｃ化された感知器
US4948742A (en) * 1987-09-08 1990-08-14 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075780A (enExample) * 1973-11-07 1975-06-21
JPS5326687A (en) * 1976-08-25 1978-03-11 Nec Corp Manu facture of integration-type thyristor matrix

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075780A (enExample) * 1973-11-07 1975-06-21
JPS5326687A (en) * 1976-08-25 1978-03-11 Nec Corp Manu facture of integration-type thyristor matrix

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62166540A (ja) * 1986-01-20 1987-07-23 Nec Corp 誘電体分離型半導体装置及びその製造方法
US4948742A (en) * 1987-09-08 1990-08-14 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device
JPH02112096A (ja) * 1988-10-21 1990-04-24 Matsushita Electric Works Ltd Ｉｃ化された感知器

Also Published As

Publication number Publication date
JPH0421343B2 (enExample) 1992-04-09

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