JPS58158974A - 接合型電界効果半導体装置 - Google Patents

接合型電界効果半導体装置

Info

Publication number
JPS58158974A
JPS58158974A JP57041046A JP4104682A JPS58158974A JP S58158974 A JPS58158974 A JP S58158974A JP 57041046 A JP57041046 A JP 57041046A JP 4104682 A JP4104682 A JP 4104682A JP S58158974 A JPS58158974 A JP S58158974A
Authority
JP
Japan
Prior art keywords
region
type
film
source
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57041046A
Other languages
English (en)
Japanese (ja)
Other versions
JPH025301B2 (cg-RX-API-DMAC7.html
Inventor
Tetsuji Yuasa
湯浅　哲司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57041046A priority Critical patent/JPS58158974A/ja
Publication of JPS58158974A publication Critical patent/JPS58158974A/ja
Publication of JPH025301B2 publication Critical patent/JPH025301B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57041046A 1982-03-16 1982-03-16 接合型電界効果半導体装置 Granted JPS58158974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57041046A JPS58158974A (ja) 1982-03-16 1982-03-16 接合型電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57041046A JPS58158974A (ja) 1982-03-16 1982-03-16 接合型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS58158974A true JPS58158974A (ja) 1983-09-21
JPH025301B2 JPH025301B2 (cg-RX-API-DMAC7.html) 1990-02-01

Family

ID=12597456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57041046A Granted JPS58158974A (ja) 1982-03-16 1982-03-16 接合型電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS58158974A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187356U (cg-RX-API-DMAC7.html) * 1987-05-26 1988-11-30
JPH05343433A (ja) * 1992-06-11 1993-12-24 Nec Yamagata Ltd 電界効果トランジスタ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435689A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS54114984A (en) * 1978-02-27 1979-09-07 Nec Corp Semiconductor device
JPS5680171A (en) * 1979-12-04 1981-07-01 Nec Corp Semiconductor device
JPS56108275A (en) * 1980-01-31 1981-08-27 Mitsubishi Electric Corp Field effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435689A (en) * 1977-08-25 1979-03-15 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPS54114984A (en) * 1978-02-27 1979-09-07 Nec Corp Semiconductor device
JPS5680171A (en) * 1979-12-04 1981-07-01 Nec Corp Semiconductor device
JPS56108275A (en) * 1980-01-31 1981-08-27 Mitsubishi Electric Corp Field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187356U (cg-RX-API-DMAC7.html) * 1987-05-26 1988-11-30
JPH05343433A (ja) * 1992-06-11 1993-12-24 Nec Yamagata Ltd 電界効果トランジスタ

Also Published As

Publication number Publication date
JPH025301B2 (cg-RX-API-DMAC7.html) 1990-02-01

Similar Documents

Publication Publication Date Title
US3660735A (en) Complementary metal insulator silicon transistor pairs
JPH1032331A (ja) 半導体装置及びその製造方法
US3873372A (en) Method for producing improved transistor devices
JPH03775B2 (cg-RX-API-DMAC7.html)
JPS6243549B2 (cg-RX-API-DMAC7.html)
JPS62156873A (ja) 半導体装置
JP2633873B2 (ja) 半導体ＢｉＣＭＯＳ装置の製造方法
JPS5893279A (ja) 半導体装置の製造方法
JPH0945905A (ja) 半導体装置およびその製造方法
US3983572A (en) Semiconductor devices
JPS58158974A (ja) 接合型電界効果半導体装置
US4923824A (en) Simplified method of fabricating lightly doped drain insulated gate field effect transistors
JP2993080B2 (ja) 相補型薄膜トランジスタの製造方法
JPH0249012B2 (cg-RX-API-DMAC7.html)
JPH0644605B2 (ja) 高耐圧ｍｏｓ電界効界半導体装置の製造方法
JPS594083A (ja) 半導体装置の製造方法
JPH06105715B2 (ja) 半導体集積回路装置の製造方法
JPH06244428A (ja) Ｍｏｓ型半導体素子の製造方法
JPS5816569A (ja) 縦形ｍｏｓｆｅｔ
JPS61239674A (ja) 半導体導電層の形成方法
JPS61256670A (ja) 絶縁ゲ−ト型電界効果トランジスタ
JP3334392B2 (ja) 静電誘導形半導体装置およびその製造方法
JPH0478169A (ja) 半導体装置及びその製造方法
JPS62213131A (ja) ３−ｖ族半導体装置の製造方法
JPS6122872B2 (cg-RX-API-DMAC7.html)