JPH025301B2 - - Google Patents

Info

Publication number
JPH025301B2
JPH025301B2 JP57041046A JP4104682A JPH025301B2 JP H025301 B2 JPH025301 B2 JP H025301B2 JP 57041046 A JP57041046 A JP 57041046A JP 4104682 A JP4104682 A JP 4104682A JP H025301 B2 JPH025301 B2 JP H025301B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
type
silicon oxide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57041046A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58158974A (ja
Inventor
Tetsuji Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57041046A priority Critical patent/JPS58158974A/ja
Publication of JPS58158974A publication Critical patent/JPS58158974A/ja
Publication of JPH025301B2 publication Critical patent/JPH025301B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57041046A 1982-03-16 1982-03-16 接合型電界効果半導体装置 Granted JPS58158974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57041046A JPS58158974A (ja) 1982-03-16 1982-03-16 接合型電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57041046A JPS58158974A (ja) 1982-03-16 1982-03-16 接合型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS58158974A JPS58158974A (ja) 1983-09-21
JPH025301B2 true JPH025301B2 (cg-RX-API-DMAC7.html) 1990-02-01

Family

ID=12597456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57041046A Granted JPS58158974A (ja) 1982-03-16 1982-03-16 接合型電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS58158974A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187356U (cg-RX-API-DMAC7.html) * 1987-05-26 1988-11-30
JPH05343433A (ja) * 1992-06-11 1993-12-24 Nec Yamagata Ltd 電界効果トランジスタ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
JPS54114984A (en) * 1978-02-27 1979-09-07 Nec Corp Semiconductor device
JPS5680171A (en) * 1979-12-04 1981-07-01 Nec Corp Semiconductor device
JPS56108275A (en) * 1980-01-31 1981-08-27 Mitsubishi Electric Corp Field effect transistor

Also Published As

Publication number Publication date
JPS58158974A (ja) 1983-09-21

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