JPS58154270A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58154270A
JPS58154270A JP57036881A JP3688182A JPS58154270A JP S58154270 A JPS58154270 A JP S58154270A JP 57036881 A JP57036881 A JP 57036881A JP 3688182 A JP3688182 A JP 3688182A JP S58154270 A JPS58154270 A JP S58154270A
Authority
JP
Japan
Prior art keywords
film
electrode
silicon
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57036881A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0576176B2 (enrdf_load_stackoverflow
Inventor
Masaki Sato
正毅 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57036881A priority Critical patent/JPS58154270A/ja
Publication of JPS58154270A publication Critical patent/JPS58154270A/ja
Publication of JPH0576176B2 publication Critical patent/JPH0576176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57036881A 1982-03-09 1982-03-09 半導体装置の製造方法 Granted JPS58154270A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57036881A JPS58154270A (ja) 1982-03-09 1982-03-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57036881A JPS58154270A (ja) 1982-03-09 1982-03-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58154270A true JPS58154270A (ja) 1983-09-13
JPH0576176B2 JPH0576176B2 (enrdf_load_stackoverflow) 1993-10-22

Family

ID=12482113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57036881A Granted JPS58154270A (ja) 1982-03-09 1982-03-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58154270A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156460A (ja) * 1984-08-28 1986-03-22 Nec Corp 半導体装置及びその製造方法
JPS6164163A (ja) * 1984-07-09 1986-04-02 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン バイポーラトランジスタの製造方法
JPS61284963A (ja) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS62122173A (ja) * 1985-11-20 1987-06-03 Fujitsu Ltd 半導体装置
JPS62502301A (ja) * 1985-03-07 1987-09-03 ステイフテルセン　インステイツテツト　フオ−ル　ミクロバ−グステクニツク　ビツド　テクニスカ　ホ−グスコラン　アイ　ストツクホルム 集積回路製造方法
JPS635566A (ja) * 1986-06-25 1988-01-11 Nec Corp 半導体装置の製造方法
JPS63204654A (ja) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Ｍｏｓ半導体装置の製造方法
JPH025435A (ja) * 1988-01-29 1990-01-10 Philips Gloeilampenfab:Nv 半導体装置の製造方法
JPH0287630A (ja) * 1988-09-26 1990-03-28 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型電界効果トランジスタの製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125649A (en) * 1979-03-22 1980-09-27 Nec Corp Production of semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125649A (en) * 1979-03-22 1980-09-27 Nec Corp Production of semiconductor integrated circuit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164163A (ja) * 1984-07-09 1986-04-02 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン バイポーラトランジスタの製造方法
JPS6156460A (ja) * 1984-08-28 1986-03-22 Nec Corp 半導体装置及びその製造方法
JPS62502301A (ja) * 1985-03-07 1987-09-03 ステイフテルセン　インステイツテツト　フオ−ル　ミクロバ−グステクニツク　ビツド　テクニスカ　ホ−グスコラン　アイ　ストツクホルム 集積回路製造方法
JPS61284963A (ja) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS62122173A (ja) * 1985-11-20 1987-06-03 Fujitsu Ltd 半導体装置
JPS635566A (ja) * 1986-06-25 1988-01-11 Nec Corp 半導体装置の製造方法
JPS63204654A (ja) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Ｍｏｓ半導体装置の製造方法
JPH025435A (ja) * 1988-01-29 1990-01-10 Philips Gloeilampenfab:Nv 半導体装置の製造方法
JPH0287630A (ja) * 1988-09-26 1990-03-28 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型電界効果トランジスタの製法

Also Published As

Publication number Publication date
JPH0576176B2 (enrdf_load_stackoverflow) 1993-10-22

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