JPH0576176B2 - - Google Patents

Info

Publication number
JPH0576176B2
JPH0576176B2 JP57036881A JP3688182A JPH0576176B2 JP H0576176 B2 JPH0576176 B2 JP H0576176B2 JP 57036881 A JP57036881 A JP 57036881A JP 3688182 A JP3688182 A JP 3688182A JP H0576176 B2 JPH0576176 B2 JP H0576176B2
Authority
JP
Japan
Prior art keywords
film
silicon
semiconductor device
manufacturing
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57036881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58154270A (ja
Inventor
Masaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57036881A priority Critical patent/JPS58154270A/ja
Publication of JPS58154270A publication Critical patent/JPS58154270A/ja
Publication of JPH0576176B2 publication Critical patent/JPH0576176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57036881A 1982-03-09 1982-03-09 半導体装置の製造方法 Granted JPS58154270A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57036881A JPS58154270A (ja) 1982-03-09 1982-03-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57036881A JPS58154270A (ja) 1982-03-09 1982-03-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58154270A JPS58154270A (ja) 1983-09-13
JPH0576176B2 true JPH0576176B2 (enrdf_load_stackoverflow) 1993-10-22

Family

ID=12482113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57036881A Granted JPS58154270A (ja) 1982-03-09 1982-03-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58154270A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1252227A (en) * 1984-07-09 1989-04-04 Fairchild Camera And Instrument Corporation Self-aligned silicide base contact for bipolar transistor
JPS6156460A (ja) * 1984-08-28 1986-03-22 Nec Corp 半導体装置及びその製造方法
SE453547B (sv) * 1985-03-07 1988-02-08 Stiftelsen Inst Mikrovags Forfarande vid framstellning av integrerade kretsar der pa en substratplatta ledare och s k gate-strukturer uppbygges
JPS61284963A (ja) * 1985-06-10 1986-12-15 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法
JPS62122173A (ja) * 1985-11-20 1987-06-03 Fujitsu Ltd 半導体装置
JPS635566A (ja) * 1986-06-25 1988-01-11 Nec Corp 半導体装置の製造方法
JPS63204654A (ja) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Ｍｏｓ半導体装置の製造方法
NL8800222A (nl) * 1988-01-29 1989-08-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op zelfregistrerende wijze metaalsilicide wordt aangebracht.
JP2691258B2 (ja) * 1988-09-26 1997-12-17 日本電信電話株式会社 Ｍｉｓ型電界効果トランジスタの製法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125649A (en) * 1979-03-22 1980-09-27 Nec Corp Production of semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS58154270A (ja) 1983-09-13

Similar Documents

Publication Publication Date Title
JP2605008B2 (ja) 半導体装置の製造方法
US4384301A (en) High performance submicron metal-oxide-semiconductor field effect transistor device structure
US4830971A (en) Method for manufacturing a semiconductor device utilizing self-aligned contact regions
US6388296B1 (en) CMOS self-aligned strapped interconnection
US6551871B2 (en) Process of manufacturing a dual gate CMOS transistor
US20020192868A1 (en) Semiconductor device having LDD-type source/drain regions and fabrication method thereof
US6365472B1 (en) Semiconductor device and method of manufacturing the same
EP1157417A1 (en) A method of manufacturing a semiconductor device
JP2509518B2 (ja) チタニウムシリサイドコンタクト製造方法
US6403426B1 (en) Method of manufacturing a semiconductor device
US7015107B2 (en) Method of manufacturing semiconductor device
JPH0576176B2 (enrdf_load_stackoverflow)
US7449403B2 (en) Method for manufacturing semiconductor device
US6025241A (en) Method of fabricating semiconductor devices with self-aligned silicide
KR100190073B1 (ko) 플럭 이온주입을 이용한 반도체장치 및 그 제조방법
JP3166911B2 (ja) 半導体装置の製造方法
EP0535814A1 (en) Integrated circuit transistor structure and method
JPH09246206A (ja) ゲート電極の形成方法
KR20040008631A (ko) 반도체소자의 제조 방법
US5391509A (en) Method of manufacturing a semiconductor device forming a high concentration impurity region through a CVD insulating film
KR100906499B1 (ko) 반도체소자의 게이트 제조방법
JPS5961182A (ja) 半導体装置の製造方法
JPH0982949A (ja) 半導体装置及びその製造方法
KR930011472B1 (ko) Mos트랜지스터의 제조방법
EP0495541A1 (en) Method of manufacturing a semiconductor device provided with a field effect transistor