JPS58147070A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS58147070A
JPS58147070A JP57030772A JP3077282A JPS58147070A JP S58147070 A JPS58147070 A JP S58147070A JP 57030772 A JP57030772 A JP 57030772A JP 3077282 A JP3077282 A JP 3077282A JP S58147070 A JPS58147070 A JP S58147070A
Authority
JP
Japan
Prior art keywords
nitride film
effect transistor
field effect
silicon nitride
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57030772A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023308B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tadashi Nishimura
正 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57030772A priority Critical patent/JPS58147070A/ja
Publication of JPS58147070A publication Critical patent/JPS58147070A/ja
Publication of JPH023308B2 publication Critical patent/JPH023308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Bipolar Transistors (AREA)
JP57030772A 1982-02-25 1982-02-25 電界効果トランジスタの製造方法 Granted JPS58147070A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030772A JPS58147070A (ja) 1982-02-25 1982-02-25 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030772A JPS58147070A (ja) 1982-02-25 1982-02-25 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58147070A true JPS58147070A (ja) 1983-09-01
JPH023308B2 JPH023308B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-01-23

Family

ID=12312966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030772A Granted JPS58147070A (ja) 1982-02-25 1982-02-25 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58147070A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170972A (ja) * 1984-02-15 1985-09-04 Sony Corp 薄膜半導体装置
JPS61105863A (ja) * 1984-10-29 1986-05-23 Seiko Epson Corp 半導体画像記憶素子
JPS6240773A (ja) * 1985-08-17 1987-02-21 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
JPS644070A (en) * 1987-06-26 1989-01-09 Hitachi Ltd Thin film transistor and manufacture thereof
JPH03237790A (ja) * 1990-02-15 1991-10-23 Shibaura Eng Works Co Ltd 電子回路部品の実装方法
US5213984A (en) * 1990-10-18 1993-05-25 Fuji Xerox Co., Ltd. Method of manufacturing an image sensor
JPH0637317A (ja) * 1990-04-11 1994-02-10 General Motors Corp <Gm> 薄膜トランジスタおよびその製造方法
US5320973A (en) * 1986-07-11 1994-06-14 Fuji Xerox Co., Ltd. Method of fabricating a thin-film transistor and wiring matrix device
JP2015062235A (ja) * 2009-06-26 2015-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法、及び半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4704629B2 (ja) * 2001-09-07 2011-06-15 株式会社リコー 薄膜トランジスタ及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567480A (en) * 1979-06-29 1981-01-26 Mitsubishi Electric Corp Film transistor
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
JPS577972A (en) * 1980-06-19 1982-01-16 Nec Corp Insulated gate type thin film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567480A (en) * 1979-06-29 1981-01-26 Mitsubishi Electric Corp Film transistor
JPS56111258A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Thin film semiconductor device
JPS577972A (en) * 1980-06-19 1982-01-16 Nec Corp Insulated gate type thin film transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170972A (ja) * 1984-02-15 1985-09-04 Sony Corp 薄膜半導体装置
JPS61105863A (ja) * 1984-10-29 1986-05-23 Seiko Epson Corp 半導体画像記憶素子
JPS6240773A (ja) * 1985-08-17 1987-02-21 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
US5320973A (en) * 1986-07-11 1994-06-14 Fuji Xerox Co., Ltd. Method of fabricating a thin-film transistor and wiring matrix device
JPS644070A (en) * 1987-06-26 1989-01-09 Hitachi Ltd Thin film transistor and manufacture thereof
JPH03237790A (ja) * 1990-02-15 1991-10-23 Shibaura Eng Works Co Ltd 電子回路部品の実装方法
JPH0637317A (ja) * 1990-04-11 1994-02-10 General Motors Corp <Gm> 薄膜トランジスタおよびその製造方法
US5213984A (en) * 1990-10-18 1993-05-25 Fuji Xerox Co., Ltd. Method of manufacturing an image sensor
JP2015062235A (ja) * 2009-06-26 2015-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法、及び半導体装置

Also Published As

Publication number Publication date
JPH023308B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-01-23

Similar Documents

Publication Publication Date Title
KR101014473B1 (ko) 산화아연의 산화물 반도체 박막층을 포함하는 반도체 장치및 그 제조방법
US6133620A (en) Semiconductor device and process for fabricating the same
GB2026768A (en) Process for the production of an integrated multilayer insulation storage cell
JPH05166837A (ja) 薄膜トランジスタとその製造方法
JPS58147070A (ja) 電界効果トランジスタの製造方法
US4513304A (en) Semiconductor memory device and process for producing the same
JPS5856263B2 (ja) 半導体装置の製造方法
US5897345A (en) Semiconductor device and process for fabricating the same
JP3141979B2 (ja) 半導体装置およびその作製方法
JPS59189676A (ja) 半導体装置
JPS60142566A (ja) 絶縁ゲ−ト薄膜トランジスタ及びその製造方法
JP2587570B2 (ja) 多結晶シリコン薄膜トランジスタおよびその製造方法
JP3393834B2 (ja) 半導体装置の作製方法
JPH06350079A (ja) 半導体装置の製造方法
JPS6223151A (ja) 半導体集積回路装置の製造方法
US7510964B2 (en) Method for manufacturing semiconductor device that includes baking a dielectric layer after exposure to plasma
JP2638685B2 (ja) 半導体装置及びその製造方法
JP3253992B2 (ja) 半導体装置およびその製造方法
JPS6036111B2 (ja) 半導体装置の製造方法
KR20230167758A (ko) 고정 전하 제어 방법 및 박막 트랜지스터의 제조 방법
JPS625654A (ja) 半導体集積回路装置及びその製造方法
JPS58169975A (ja) 半導体装置およびその製造方法
JP3360057B2 (ja) 半導体装置
JPS63117470A (ja) モス型半導体装置およびその製造方法
JPH0336736A (ja) 絶縁ゲート電界効果半導体装置