JPS58142582A - 非晶質水素化シリコン光導電膜 - Google Patents

非晶質水素化シリコン光導電膜

Info

Publication number
JPS58142582A
JPS58142582A JP57026241A JP2624182A JPS58142582A JP S58142582 A JPS58142582 A JP S58142582A JP 57026241 A JP57026241 A JP 57026241A JP 2624182 A JP2624182 A JP 2624182A JP S58142582 A JPS58142582 A JP S58142582A
Authority
JP
Japan
Prior art keywords
film
hydrogenated silicon
hydrogen
amorphous hydrogenated
hydrogen concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57026241A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6258675B2 (enrdf_load_stackoverflow
Inventor
Yoshiya Takeda
悦矢 武田
Shinji Fujiwara
慎司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57026241A priority Critical patent/JPS58142582A/ja
Publication of JPS58142582A publication Critical patent/JPS58142582A/ja
Publication of JPS6258675B2 publication Critical patent/JPS6258675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
JP57026241A 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜 Granted JPS58142582A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57026241A JPS58142582A (ja) 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57026241A JPS58142582A (ja) 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63233012A Division JPH01164074A (ja) 1988-09-16 1988-09-16 非晶質水素化シリコン光導電膜の製造方法

Publications (2)

Publication Number Publication Date
JPS58142582A true JPS58142582A (ja) 1983-08-24
JPS6258675B2 JPS6258675B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=12187800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57026241A Granted JPS58142582A (ja) 1982-02-19 1982-02-19 非晶質水素化シリコン光導電膜

Country Status (1)

Country Link
JP (1) JPS58142582A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6090342A (ja) * 1983-10-25 1985-05-21 Matsushita Electric Ind Co Ltd 光導電体の製造方法
JPS63271984A (ja) * 1987-04-17 1988-11-09 Kanegafuchi Chem Ind Co Ltd 光メモリ、光記録方法および光メモリの製法
JPH01115036A (ja) * 1987-10-29 1989-05-08 Matsushita Electric Ind Co Ltd 光電変換装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6090342A (ja) * 1983-10-25 1985-05-21 Matsushita Electric Ind Co Ltd 光導電体の製造方法
JPS63271984A (ja) * 1987-04-17 1988-11-09 Kanegafuchi Chem Ind Co Ltd 光メモリ、光記録方法および光メモリの製法
JPH01115036A (ja) * 1987-10-29 1989-05-08 Matsushita Electric Ind Co Ltd 光電変換装置

Also Published As

Publication number Publication date
JPS6258675B2 (enrdf_load_stackoverflow) 1987-12-07

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